MSKSEMI-MMBT2907
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MMBT2907
Product specification
MMBT2907
MARKING
TRANSISTOR (PNP)
PACKAGE OUTLINE
FEATURES
1. BASE
Epitaxial planar die construction
Complementary NPN Type
available(MMBT2222)
2. EMITTER
3.COLLECTOR
2F
SOT-23
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
-60
Unit
V
Collector-Emitter Voltage
-60
V
Emitter-Base Voltage
-5
V
Collector Current -Continuous
Total Device Dissipation
-600
250
500
mA
mW
℃/W
P
D
Thermal Resistance
Junction to Ambient
R
θJA
T
J
Junction Temperature
Storage Temperature
150
℃
℃
-55 to +150
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol Test
conditions
Min
Typ Max Unit
Collector-base breakdown voltage
I
C
=-10μA,I
E
=0
-60
V
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CBO
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
=-10mA,I
B
=0
-60
-5
V
V
I
E
=-10μA,I
C
=0
V
CB
=-50V,I
E
=0
-20
-10
-50
300
nA
nA
nA
Base cut-off current
V
EB
=-3V, I
C
=0
I
EBO
Collector cut-off current
I
CEX
V
CE
=-30 V, V
BE(off)
=-0.5V
V
CE
=-10V,I
C
=-150mA
V
CE
=-10V,I
C
=-0.1mA
V
CE
=-10V,I
C
=-1mA
V
CE
=-10V,I
C
=-10mA
V
CE
=-10V,I
C
=-500mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
I
C
=-150mA,I
B
=-15mA
I
C
=-500mA,I
B
=-50mA
V
CE
=-20V,I
C
=-50mA,f=100MHz
100
75
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE(sat)*
V
CE(sat)*
V
BE(sat)*
V
BE(sat)*
f
T
DC current gain
100
100
50
-0.4
-1.6
-1.3
-2.6
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
Transition frequency
Delay time
200
MHz
ns
ns
ns
ns
t
d
10
25
V
CE
=-30V,I
C
=-150mA,
B1
=-15mA
t
r
Rise time
t
S
Storage time
225
60
V
CE
=-6V,I
C
=-150mA,
I
B1
=- I
B2
=- 15mA
t
f
Fall time
*Pulse test: t
p
≤300μs, δ≤0.02.
Copyright© Msksemi Incorporated
MMBT2907
Typical Characteristics
I
C
h
FE
——
Static Characteristic
-0.25
500
400
300
200
100
0
COMMON EMITTER
CE
=-10V
COMMON EMITTER
V
T
a
=25
℃
-800uA
-720uA
-0.20
-0.15
-0.10
-0.05
-0.00
-640uA
-560uA
T
a
=100
℃
-480uA
-400uA
-320uA
T
a
=25
℃
-240uA
-160uA
I
B
=-80uA
-0
-2
-4
-6
-8
-10
-12
-0.1
-1
-10
-100
-600
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
CEsat
—— I
C
V
BEsat
—— I
C
-0.9
-0.6
-0.3
-0.0
-1.2
-0.8
-0.4
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
-0.0
100
-1
-10
-100
-1
-10
-100
-600
-1.0
150
-600
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
C
ob
/ C
ib
—— V
CB
/ V
EB
-600
-100
f=1MHz
I
E
=0/ I
C
=0
COMMON EMITTER
V
CE
=-10V
T
a
=25
℃
C
ib
C
ob
T
a
=100
℃
-10
-1
10
T
a
=25
℃
-0.1
-0.0
1
-0.1
-0.2
-0.4
-0.6
-0.8
-1
-10
-20
BASE-EMMITER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
P
c
—— T
a
300
250
200
150
100
50
0
0
25
50
75
100
125
AMBIENT TEMPERATURE
T
a
(
℃
)
Copyright© Msksemi Incorporated
MMBT2907
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
MMBT2907
SOT-23
3000
Copyright© Msksemi Incorporated
MMBT2907
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o
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