MSKSEMI-MMBT5401-MS
| Part # | MSKSEMI-MMBT5401-MS |
| Download | MSKSEMI-MMBT5401-MS |
MMBT5401-MS
Product specification
MMBT5401-MS
TRANSISTOR (PNP)
PACKAGE OUTLINE
MARKING
FEATURES
1. BASE
Complementary to MMBT5551-MS
Ideal for Medium Power Amplification and
Switching
2. EMITTER
3.COLLECTOR
2L
SOT-23
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
-160
-150
-5
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current
-0.6
0.3
A
Collector Power Dissipation
Thermal Resistance
from Junction to Ambient
W
P
C
416
150
℃
/W
℃
R
。JA
T
j
Junction Temperature
Storage Temperature
℃
T
stg
-55
~
+150
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test
conditions
Min Typ Max Unit
I
C
=-100µA, I
E
=0
-160
-150
-5
V
Collector-base breakdown voltage
V
(BR)CBO
*
I
C
=-1mA, I
B
=0
V
Collector-emitter breakdown voltage
V
(BR)CEO
Emitter-base breakdown voltage
I
E
=-10µA, I
C
=0
V
V
(BR)EBO
V
CB
=-120V, I
E
=0
V
EB
=-4V, I
C
=0
-0.1
-0.1
μA
μA
Collector cut-off current
Emitter cut-off current
I
CBO
I
EBO
*
V
CE
=-5V, I
C
=-1mA
V
CE
=-5V, I
C
=-10mA
V
CE
=-5V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
80
100
50
h
FE(1)
*
300
h
FE(2)
DC current gain
*
h
FE(3)
*
-0.2
-0.5
-1
V
V
V
CE(sat)1
Collector-emitter saturation voltage
Base-emitter saturation voltage
*
V
CE(sat)2
*
V
V
BE(sat)1
*
-1
V
V
BE(sat)2
V
CE
=-5V,I
C
=-10mA, f=30MHz
100
MHz
Transition frequency
f
T
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
CLASSIFICATION OF h
FE (2)
RANK
L
H
100-200
200-300
RANGE
Copyright© Msksemi Incorporated
MMBT5401-MS
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-20
-18
-16
-14
-12
-10
-8
300
250
200
150
100
50
V
CE
=-5V
-100uA
-90uA
COMMON
EMITTER
T
a
=25
℃
T
a
=100
o
C
-80uA
-70uA
-60uA
T
a
=25
o
C
-50uA
-40uA
-6
-30uA
-20uA
-4
-2
I
B
=-10uA
-0
0
-600
-0
-3
-6
-9
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1.0
-0.8
-0.6
-0.4
-0.2
-0.0
-1
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
-0.1
T
a
=100
℃
T
a
=25
℃
-0.01
-0.1
-600
-600
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
V
——
V
CB
/
V
EB
C
ob
/ C
ib
——
C
BE
-100
100
V
CE
=-5V
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
C
Cib
-10
T
a
=100
o
C
10
T
a
=25
℃
-1
Cob
-0.1
-0.0
1
-0.5
-0.2
-0.4
-0.6
-0.8
-1.0
-1
-10
REVERSE VOLTAGE
V
(V)
BASE-EMITTER VOLTAGE
V
BE
(V)
I
C
f
T
——
P
c
—— T
a
300
250
200
150
100
50
0.4
0.3
0.2
0.1
0.0
VCE=-5V
T
a
=25
o
C
0
-0
-5
-10
-15
-20
-25
-30
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
Ta (
℃
)
COLLECTOR CURRENT
I
C
(mA)
Copyright© Msksemi Incorporated
MMBT5401-MS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
MMBT5401-MS
SOT-23
3000
Copyright© Msksemi Incorporated
MMBT5401-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
