MSKSEMI-MMBTA44-MS
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MMBTA44-MS
Product specification
MMBTA44-MS
TRANSISTOR ((NPN)
PACKAGE OUTLINE
MARKING
FEATURES
1. BASE
High Collector-Emitter Voltage
2. EMITTER
Complement to MMBTA94-MS
3.COLLECTOR
3D
SOT-23
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Value
Unit
V
400
400
6
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
mA
Collector Current-Continuous
200
300
350
357
150
I
CM
Collector Current -Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
mA
mW
℃
/W
℃
P
C
R
ΘJA
T
j
Storage Temperature
T
stg
℃
-55
～
+150
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
I
C
=100µA, I
E
=0
400
V
Collector-base breakdown voltage
V
(BR)CBO
I
C
=1mA, I
B
=0
400
6
V
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CEO
V
(BR)EBO
I
CBO
*
I
E
=10µA, I
C
=0
V
CB
=400V, I
E
=0
0.1
0.1
µA
µA
V
EB
=4V, I
C
=0
Emitter cut-off current
I
EBO
V
CE
=10V, I
C
=1mA
V
CE
=10V, I
C
=10mA
V
CE
=10V, I
C
=50mA
V
CE
=10V, I
C
=100mA
I
C
=1mA, I
B
=0.1mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CB
=20V, I
E
=0, f=1MHz
V
EB
=0.5V, I
C
=0, f=1MHz
40
50
45
40
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
*
*
*
*
200
DC current gain
0.4
0.5
0.75
0.75
7
V
V
V
CE(sat)1
V
CE(sat)2
V
CE(sat)3
*
*
*
Collector-emitter saturation voltage
V
V
Base-emitter saturation voltage
Collector output capacitance
Emitter input capacitance
V
BE(sat)
C
ob
*
pF
pF
130
C
ib
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Copyright© Msksemi Incorporated
MMBTA44-MS
Typical Characteristics
h
FE
—— I
C
Static Characteristic
16
14
12
10
8
1000
100
10
V
CE
= 10V
COMMON
EMITTER
T
a
=25
℃
80uA
72uA
T
a
=100
℃
T
a
=25
℃
64uA
56uA
48uA
40uA
6
32uA
24uA
4
16uA
I
B
=8uA
2
0
0
5
10
15
20
100
20
0.1
1
10
100
100
150
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
0.0
300
100
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
T
a
=100
℃
T
a
=25
℃
30
10
0.1
1
10
1
10
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
P
c
—— T
a
C
ob
/ C
ib
——
V
CB
/
V
EB
400
350
300
250
200
150
100
50
500
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
℃
C
ib
100
10
1
C
ob
0
0.1
1
10
0
25
50
75
100
125
REVERSE VOLTAGE
V
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
Copyright© Msksemi Incorporated
MMBTA44-MS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
MMBTA44-MS
SOT-23
3000
Copyright© Msksemi Incorporated
MMBTA44-MS
Attention
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have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
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nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
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at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
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■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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or events cannot occur. Such measures include but are
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production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
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Copyright© Msksemi Incorporated
