MSKSEMI-MMBTA92-MS

Part #MSKSEMI-MMBTA92-MS
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MSKSEMI-MMBTA92-MS
MMBTA92-MS  
Product specification  

MMBTA92-MS  
MARKING  
Reference News  
TRANSISTOR (PNP)  
PACKAGE OUTLINE  
FEATURES  
1. BASE  
2. EMITTER  
3.COLLECTOR  
High voltage transistor  
2D  
SOT-23  
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
V
Collector-Base Voltage  
-300  
-300  
-5  
V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Collector Current -Continuous  
Collector Current -Pulsed  
-200  
-500  
mA  
mA  
I

CM  

Collector Power
 
Dissipation  
300  
150  
mW  
℃
P

C  

Junction Temperature  
Storage Temperature  
T

j  

-55-150  
417  
℃
T

stg  

R

ӨJA  

Thermal Resistance from Junction to Ambient  
℃
/W  
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
I

C

= -100
μ
A, I

E

=0  
Min  
Max  
Unit  
Collector-base breakdown voltage  
-300  
V
V

(BR)CBO  

Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
I

C

= -1mA, I

B

=0  
-300  
-5  
V
V

(BR)CEO  

V

(BR)EBO  

I

CBO  

V
I

E

= -100
μ
A, I

C

=0  
V

CB

=-200V, I

E

=0  
-0.25  
-0.1  
μ
A  
μ
A  
Emitter cut-off current  
V

EB

= -5V, I

C

=0  
I

EBO  

V

CE

= -10V, I

C

= -1mA  
V

CE

= -10V, I

C

=-10mA  
V

CE

= -10V, I

C

=-30mA  
I

C

=-20mA, I

B

= -2mA  
60  
100  
60  
h

FE(1)  

DC current gain  
200  
h

FE(2)  

h

FE(3)  

Collector-emitter saturation voltage  
Base-emitter saturation voltage  
-0.2  
-0.9  
V
V
V

CE

(sat)  
V

BE

(sat)  
I

C

= -20mA,
 
I

B

= -2mA  
V

CE

=-20V, I

C

= -10mA  
f=
30MHz  
Transition frequency  
50  
MHz  
f

T  

Copyright© Msksemi Incorporated  

MMBTA92-MS  
Typical Characteristics  
V

CE  

h

FE

——  
I

C  

I

C

——  
70  
1000  
100  
10  
-500uA  
COMMON  
EMITTER  
T

a

=25
℃
 
-450uA  
-400uA  
-350uA  
-300uA  
-250uA  
-200uA  
-150uA  
-100uA  
60  
50  
40  
30  
20  
10  
0
T

a

=100
℃  
T

a

=25
℃  
I

B

=-50uA  
COMMON EMITTER  
V

CE

= -10V  
0
4
8
12  
16  
20  
24  
-0.1  
-1  
-10  
-100  
-300  
COLLECTOR-EMITTER VOLTAGE
 
V

CE

(V)  
COLLECTOR CURRENT
 
I

C

(mA)  
V

CEsat

——  
V

BEsat

——  
I

C  

I

C  

-900  
-500  
T

a

=25
℃  
T

a

=100
℃  
T

a

=25
℃  
-600  
-100  
T

a

=100
℃  
β
=10  
β
=10  
-50  
-10  
-300  
-0.1  
-1  
-10  
-50  
-1200  
-20  
-0.1  
-1  
-10  
-100  
-100  
150  
COLLECTOR CURREMT
 
I

C

(mA)  
COLLECTOR CURREMT
 
I

C

(mA)  
I

C

——  
V

BE  

f

T

——  
I

C  

-100  
300  
100  
-10  
-1  
COMMON EMITTER  
V

CE

=-20V  
COMMON EMITTER  
V

CE

= -10V  
T

a

=25
℃  
-0.1  
100  
10  
-0.1  
-0  
-300  
-600  
-900  
-1  
-10  
COLLECTOR CURRENT
 
I

C

(mA)  
BASE-EMMITER VOLTAGE
 
V

BE

(mV)  
C

ob

/C

ib

——  
V

CB

/V

EB  

P

C

—— T

a  

350  
300  
250  
200  
150  
100  
50  
f=1MHz  
I

E

=0/I

C

=0  
T

a

=25
℃  
C

ib  

10  
C

ob  

1
-0.1  
0
-1  
-10  
0
25  
50  
75  
100  
125  
REVERSE VOLTAGE  
V
(V)  
AMBIENT TEMPERATURE
 
T

a

(
℃
)  
Copyright© Msksemi Incorporated  

MMBTA92-MS  
PACKAGE MECHANICAL DATA  
Dimensions In Millimeters  
Dimensions In Inches  
Symbol  
Min  
Max  
1.150  
0.100  
1.050  
0.500  
0.150  
3.000  
1.400  
2.550  
Min  
Max  
0.045  
0.004  
0.041  
0.020  
0.006  
0.118  
0.055  
0.100  
A
A1  
A2  
b
c
D
E
E1  
e
e1  
L
0.900  
0.000  
0.900  
0.300  
0.080  
2.800  
1.200  
2.250  
0.035  
0.000  
0.035  
0.012  
0.003  
0.110  
0.047  
0.089  
0.950 T
Y
P  
0.550 REF  
0.037 T
Y
P  
0.022 REF  
1.800  
2.000  
0.071  
0.079  
L1  
θ
0.300  
0°  
0.500  
8°  
0.012  
0°  
0.020  
8
°  
Suggested Pad Layout  
REEL SPECIFICATION  
P/N  
PKG  
QTY  
MMBTA92-MS  
SOT-23  
3000  
Copyright© Msksemi Incorporated  

MMBTA92-MS  
Attention  
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
 
have specifications
 
that can  
handle applications that require extremely high levels of reliability, such as life-support
 
systems, aircraft’s control systems, or  
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with  
your MSKSEMI Semiconductor representative
 
nearest you
 
before using any MSKSEMI Semiconductor products described  
or contained herein in such
 
applications.  
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that  
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in  
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.  
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the  
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the  
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o  
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  
devices mounted in the customer’sproducts orequipment.  
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor  
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could  
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing  
equipment, adopt safety measures so that these kinds of accidents
 
or events cannot occur. Such measures include but are  
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.  
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
 
or contained  
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported  
without obtaining the export license from theauthorities
 
concerned in accordance
 
with the above law.  
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or  
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior  
written permission of MSKSEMI Semiconductor.  
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume  
production. MSKSEMI Semiconductor believes information herein is accurate and
 
reliable, but no guarantees are made or  
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.  
■
Any and all information described or contained herein are subject to change without notice due to  
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI  
Semiconductor productthat you intend to use.  
Copyright© Msksemi Incorporated