MSKSEMI-MMBTA94-MS
| Part # | MSKSEMI-MMBTA94-MS |
Download  | MSKSEMI-MMBTA94-MS |
MMBTA94-MS
Product specification
MMBTA94-MS
TRANSISTOR (PNP)
PACKAGE OUTLINE
MARKING
FEATURES
1. BASE
2. EMITTER
High Breakdown Voltage
3.COLLECTOR
4D
SOT-23
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
V
Collector-Base Voltage
-400
-400
-5
V
CBO
V
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
CEO
V
EBO
I
C
Collector Current -Continuous
Collector Current -Pulsed
-200
-300
mA
mA
I
CM
Collector Power Dissipation
Thermal Resistance From Junction
T
o
A
mbient
Junction
T
e
mperature
350
357
mW
℃
/W
℃
P
C
R
ΘJA
T
j
150
-55
～
+150
Storage
T
e
mperature
℃
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Max Unit
I
C
=-100µA, I
E
=0
-400
-400
-5
V
Collector-base breakdown voltage
V
(BR)CBO
I
C
=-1mA, I
B
=0
V
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
(BR)CEO
V
(BR)EBO
I
CBO
I
E
=-100µA, I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
=-4V, I
C
=0
-0.1
-5
µA
µA
µA
Collector cut-off current
I
CEO
-0.1
300
Emitter cut-off current
I
EBO
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-10V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
80
70
40
40
h
FE(1)
h
FE(2)
DC current gain
h
FE(3)
h
FE(4)
-0.2
-0.3
V
V
V
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-20V,I
C
=-10mA,
-0.75
50
MHz
f
T
f=30MHz
Copyright© Msksemi Incorporated
MMBTA94-MS
Typical Characteristics
h
FE
—— I
C
Static Characteristic
-20
-15
-10
-5
-1000
-100
-10
V
CE
= -10V
COMMON
EMITTER
T
a
=25
℃
-100uA
-90uA
-80uA
T
a
=100
o
C
-70uA
-60uA
T
a
=25
o
C
-50uA
-40uA
-30uA
-20uA
I
B
=-10uA
-0
-0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-200
-60
-1
-10
-100
-200
-200
-20
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
V
CEsat
—— I
C
V
BEsat
—— I
C
-1000
-800
-600
-400
-200
-0
-10
-1
β
=10
β
=10
T
a
=25
℃
T
a
=100
℃
-0.1
T
a
=25
℃
T
a
=100
℃
-0.01
-1E-3
-0.1
-1
-10
-100
-1
-10
-100
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
C
ob
/ C
ib
——
f
T
——
V
CB
/
V
EB
I
C
60
1000
100
10
V
CE
=-20V
T
a
=25
o
f=1MHz
I
E
=0 / I
C
=0
T
a
=25
o
55
50
45
40
35
30
25
20
C
C
C
ib
C
ob
1
-0
-10
-20
-30
-40
-50
-0.1
-1
-10
REVERSE VOLTAGE
V
(V)
COLLECTOR CURRENT
I
C
(mA)
P
c
—— T
a
400
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
AMBIENT TEMPERATURE
T
a
(
℃
)
Copyright© Msksemi Incorporated
MMBTA94-MS
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
MMBTA94-MS
SOT-23
3000
Copyright© Msksemi Incorporated
MMBTA94-MS
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
