MSKSEMI-MMDT3946
| Part # | MSKSEMI-MMDT3946 |
Download  | MSKSEMI-MMDT3946 |
MMDT3946
Semiconductor
Compiance
ꢀ ꢀ
ꢀꢁꢁꢂꢃꢄꢅꢆꢇ
DUAL TRANSISTOR (NPN+PNP)
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
6
ꢀ
ꢀ
5
ꢀ ꢀ ꢀ ꢀ ꢀ
ꢈꢉꢊꢃꢋꢌꢉꢍꢀ
4
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
Complementary Pair
ꢀ
One 3904-Type NPN
One 3906-Type PNP
1
2
3
ꢀ
ꢀ
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
ꢀꢁꢂꢃꢄꢅꢄꢆ
ꢁꢊꢎꢏꢐꢑꢒꢀꢎꢆꢇ
g
ꢀ
ꢁꢊꢓꢏꢁꢋꢁꢀꢌꢊꢃꢏꢐꢑꢍꢀꢔꢃ
ꢕ
ꢖꢗꢘ
ꢀ
ꢀꢙꢚꢛꢜꢝꢝꢀꢞꢟꢠꢜꢡꢢꢣꢝꢜꢀꢚꢞꢟꢜꢤꢥꢀ ꢀ
ꢍꢦꢧꢨꢞꢛꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢩꢕꢡꢕꢧꢜꢟꢜꢡꢀ
ꢪꢕꢛꢙꢜꢀ
60
40
5
0.2
0.2
150
-55-150
ꢋꢚꢣꢟꢝꢀ
V
V
V
A
ꢪ
ꢫꢬꢭ
ꢀ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
ꢪ
ꢫꢉꢭ
ꢪ
ꢉꢬꢭ
ꢏ
ꢫ
ꢀ
ꢀ
ꢀ
ꢩ
ꢫ
ꢀ
ꢃ
ꢮ
ꢀ
ꢃ
ꢝꢟꢯ
W
ć
ꢀ
Storage
T
e
mperature
ć
ꢐꢩꢐꢀꢄꢅꢰꢆꢀꢉꢱꢉꢫꢃꢌꢏꢫꢊꢱꢀꢫꢲꢊꢌꢊꢫꢃꢉꢌꢏꢍꢃꢏꢫꢍꢀꢔꢃꢕꢖꢗꢘ
ꢀ
ꢀꢙꢚꢛꢜꢝꢝꢀꢞꢟꢠꢜꢡꢢꢣꢝꢜꢀꢝꢳꢜꢴꢣꢵꢣꢜꢤꢥꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢩꢕꢡꢕꢧꢜꢟꢜꢡꢀ
ꢀ ꢍꢦꢧꢨꢞꢛꢀ
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
ꢀ ꢀ ꢃꢜꢝꢟꢀ ꢀ ꢀ ꢴꢞꢚꢤꢣꢟꢣꢞꢚꢝꢀ
I
C
= 10ꢀA,
I
E
=0
I
C
= 1mA,
I
B
=0
ꢁꢣ ꢀ
60
40
5
ꢁꢕ ꢀ
ꢀ ꢀ ꢋꢚ
ꢣ
ꢀ
V
ꢫꢞꢛꢛꢜꢴꢟꢞꢡꢷꢨꢕꢝꢜꢀꢨꢡꢜꢕꢸꢤꢞꢢꢚꢀꢹꢞꢛꢟꢕꢯꢜꢀ ꢀ
ꢫꢞꢛꢛꢜꢴꢟꢞꢡꢷꢜꢧꢣꢟꢟꢜꢡꢀꢨꢡꢜꢕꢸꢤꢞꢢꢚꢀꢹꢞꢛꢟꢕꢯꢜꢀ
ꢉꢧꢣꢟꢟꢜꢡꢷꢨꢕꢝꢜꢀꢨꢡꢜꢕꢸꢤꢞꢢꢚꢀꢹꢞꢛꢟꢕꢯꢜꢀ
ꢫꢞꢛꢛꢜꢴꢟꢞꢡꢀꢴꢙꢟꢷꢞꢵꢵꢀꢴꢙꢡꢡꢜꢚꢟꢀ ꢀ
ꢫꢞꢛꢛꢜꢴꢟꢞꢡꢀꢴꢙꢟꢷꢞꢵꢵꢀꢴꢙꢡꢡꢜꢚꢟꢀ ꢀ
ꢉꢧꢣꢟꢟꢜꢡꢀꢴꢙꢟꢷꢞꢵꢵꢀꢴꢙꢡꢡꢜꢚꢟꢀ ꢀ
V
V
ꢀA
ꢀA
ꢀA
I
E
= 10ꢀA, I
C
=0
V
CB
= 30 V ,
I
E
=0
V
CE
= 30 V ,
I
B
=0
V
EB
= 5V ,
I
C
=0
ꢀꢀꢀꢀ
0.05
0.5
0.05
I
CEO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
V
CE
= 1
V
,
I
C
= 0.1mA
V
CE
= 1
V
,
I
C
= 1mA
V
CE
= 1
V
,
I
C
= 10mA
V
CE
= 1
V
,
I
C
= 50mA
V
CE
= 1
V
,
I
C
= 100mA
I
C
=10 mA,
I
B
= 1mA
I
C
=50 mA,
I
B
= 5mA
I
C
= 10 mA,
I
B
= 1mA
I
C
= 50 mA,
I
B
= 5mA
40
70
100
60
ꢂꢫꢀꢴꢙꢡꢡꢜꢚꢟꢀꢯꢕꢣꢚꢀ
300
h
FE(5)
30
V
CE(sat)1
V
CE(sat)2
V
BE(sat)1
V
BE(sat)2
0.2
0.3
0.85
0.95
V
V
V
ꢫꢞꢛꢛꢜꢴꢟꢞꢡꢷꢜꢧꢣꢟꢟꢜꢡꢀꢝꢕꢟꢙꢡꢕꢟꢣꢞꢚꢀꢹꢞꢛꢟꢕꢯꢜꢀ
ꢬꢕꢝꢜꢷꢜꢧꢣꢟꢟꢜꢡꢀꢝꢕꢟꢙꢡꢕꢟꢣꢞꢚꢀꢹꢞꢛꢟꢕꢯꢜꢀ
0.65
300
V
ꢃꢡꢕꢚꢝꢣꢟꢣꢞꢚꢀꢵꢡꢜꢺꢙꢜꢚꢴꢦꢀ
ꢐꢞꢣꢝꢜꢀꢵꢣꢯꢙꢡꢜꢀ
f
T
V
CE
=20
V
,
I
C
=20mA, f=100MHz
MHz
V
CE
=5
V
,
I
c
=0.1mA,
NF
5
dB
f=1KHz,Rg=1Kꢁ
ꢭꢙꢟꢳꢙꢟꢀꢴꢕꢳꢕꢴꢣꢟꢕꢚꢴꢜ
ꢂꢜꢛꢕꢦꢀꢟꢣꢧꢜꢀ
ꢌꢣꢝꢜꢀꢟꢣꢧꢜꢀ
ꢍꢟꢞꢡꢕꢯꢜꢀꢟꢣꢧꢜꢀ
ꢈꢕꢛꢛꢀꢟꢣꢧꢜꢀ
C
ob
t
d
t
r
t
S
t
f
V
CB
=5
V
,
I
E
=0,f=1MHz
4
35
35
200
50
pF
nS
nS
nS
nS
V
CC
=3
V
,
V
BE
=0.5V
I
C
=10mA , I
B1
=- I
B2
=1mA
V
CC
=3
V
,
I
C
=10mA
I
B1
=-I
B2
= 1mA
MMDT3946
Semiconductor
Compiance
ꢀꢁꢂꢃꢀꢄꢀꢅꢆꢁꢇꢃꢈꢉꢊꢋꢇ
ꢌ
ꢍꢎꢏ
ꢀ
ꢀ
ꢅꢐꢑꢒꢓꢔꢔꢅꢕꢖꢗꢓꢘꢙꢚꢔꢓꢅꢑꢕꢖꢓꢛꢜꢅ ꢅ
ꢠꢌꢘꢌꢞꢓꢖꢓꢘꢅ
ꢊꢝꢞꢟꢕꢒꢅ
ꢡꢌꢒꢐꢓꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢅꢄꢑꢚꢖꢔꢅ
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
ꢡ
ꢢꢣꢤ
ꢅ
ꢅ
ꢅ
-40
-40
-5
-0.2
0.2
150
V
V
V
ꢡ
ꢢꢥꢤ
ꢡ
ꢥꢣꢤ
ꢃ
ꢢ
ꢅ
ꢠ
ꢢ
ꢅ
ꢇ
ꢦ
ꢅ
A
W
ꢀ
ꢀ
Storage
T
e
mperature
ꢇ
ꢔꢖꢧ
ꢅ
-55-150
ꢠꢈꢠꢅꢨꢩꢪꢫꢅꢥꢬꢥꢢꢇꢆꢃꢢꢁꢬꢅꢢꢭꢁꢆꢁꢢꢇꢥꢆꢃꢊꢇꢃꢢꢊꢅꢋꢇꢌꢍꢎꢏ
ꢀ
ꢅꢐꢑꢒꢓꢔꢔꢅꢕꢖꢗꢓꢘꢙꢚꢔꢓꢅꢔꢮꢓꢯꢚꢰꢚꢓꢛꢜꢅ
ꢅ ꢅꢅꢅꢅ
ꢅꢅꢅ ꢅꢅ
ꢠꢌꢘꢌꢞꢓꢖꢓꢘꢅ
ꢊꢝꢞꢟꢕꢒ
ꢇꢓꢔꢖꢅ ꢯꢕꢑꢛꢚꢖꢚꢕꢑꢔꢅ
ꢀꢚꢑꢅ
-40
-40
-5
ꢇꢝꢮꢅ
ꢀꢌꢱꢅꢅ
ꢄꢑꢚꢖ
V
ꢢꢕꢒꢒꢓꢯꢖꢕꢘꢲꢟꢌꢔꢓꢅꢟꢘꢓꢌꢳꢛꢕꢙꢑꢅꢴꢕꢒꢖꢌꢧꢓꢅ ꢅ
ꢢꢕꢒꢒꢓꢯꢖꢕꢘꢲꢓꢞꢚꢖꢖꢓꢘꢅꢟꢘꢓꢌꢳꢛꢕꢙꢑꢅꢴꢕꢒꢖꢌꢧꢓꢅ ꢅ
ꢥꢞꢚꢖꢖꢓꢘꢲꢟꢌꢔꢓꢅꢟꢘꢓꢌꢳꢛꢕꢙꢑꢅꢴꢕꢒꢖꢌꢧꢓꢅ
ꢢꢕꢒꢒꢓꢯꢖꢕꢘꢅꢯꢐꢖꢲꢕꢰꢰꢅꢯꢐꢘꢘꢓꢑꢖꢅ ꢅ
V
(BR)CBO
I
C
=-10ꢀA,I
E
=0
V
(BR)CEO
I
C
=-1mA,I
B
=0
V
(BR)EBO
I
E
=-10ꢀA,I
C
=0
V
V
I
CBO
I
EBO
V
CB
=-30
V
,
I
E
=0
-0.05
-0.05
ꢀA
ꢀA
ꢥꢞꢚꢖꢖꢓꢘꢅꢯꢐꢖꢲꢕꢰꢰꢅꢯꢐꢘꢘꢓꢑꢖꢅ ꢅ
V
EB
=-5
V
,
I
C
=0
h
FE(1)
h
FE(2)
h
FE(3)
h
FE(4)
h
FE(5)
V
CE
=-1
V
,
I
C
=-0.1mA
V
CE
=-1
V
,
I
C
=-1mA
V
CE
=-1
V
,
I
C
=-10mA
V
CE
=-1
V
,
I
C
=-50mA
V
CE
=-1
V
,
I
C
=-100mA
60
80
ꢵꢢꢅꢯꢐꢘꢘꢓꢑꢖꢅꢧꢌꢚꢑꢅ ꢅ
100
60
300
30
V
CE(sat)1
I
C
=-10mA,I
B
=-1mA
V
CE(sat)2
I
C
=-50mA,I
B
=-5mA
V
BE(sat)1
I
C
=-10mA,I
B
=-1mA
V
BE(sat)2
I
C
=-50mA,I
B
=-5mA
-0.25
-0.4
V
V
ꢢꢕꢒꢒꢓꢯꢖꢕꢘꢲꢓꢞꢚꢖꢖꢓꢘꢅꢔꢌꢖꢐꢘꢌꢖꢚꢕꢑꢅꢴꢕꢒꢖꢌꢧꢓꢅ
ꢣꢌꢔꢓꢲꢓꢞꢚꢖꢖꢓꢘꢅꢔꢌꢖꢐꢘꢌꢖꢚꢕꢑꢅꢴꢕꢒꢖꢌꢧꢓꢅ
-0.65
250
-0.85
-0.95
V
V
ꢇꢘꢌꢑꢔꢚꢖꢚꢕꢑꢅꢰꢘꢓꢶꢐꢓꢑꢯꢝꢅ
f
T
V
CE
=-20
V
,
I
C
=-10mA,f=100MHz
V
CB
=-5
V
,
I
E
=0,f=1MHz
CE
=-5
V
,
I
c
=-0.1mA,
f=1KH
ꢀ
,Rg=1Kꢁ
CC
=-3
V
, V
BE
=-0.5V
MHz
pF
ꢢꢕꢒꢒꢓꢯꢖꢕꢘꢅꢕꢐꢖꢮꢐꢖꢅꢯꢌꢮꢌꢯꢚꢖꢌꢑꢯꢓꢅ
C
ob
4.5
4
V
ꢈꢕꢚꢔꢓꢅꢰꢚꢧꢐꢘꢓꢅ
NF
dB
ꢵꢓꢒꢌꢝꢅꢖꢚꢞꢓꢅ
ꢆꢚꢔꢓꢅꢖꢚꢞꢓꢅ
ꢊꢖꢕꢘꢌꢧꢓꢅꢖꢚꢞꢓꢅ
ꢷꢌꢒꢒꢅꢖꢚꢞꢓꢅ
t
d
t
r
35
35
nS
nS
nS
nS
V
I
C
=-10mA , I
B1
=-I
B2
=-1mA
t
S
t
f
225
75
V
CC
=-3
V
,
I
C
=-10mA
I
B1
=-I
B2
=- 1mA
ꢅ
MMDT3946
Semiconductor
Compiance
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.350
0.150
2.200
1.350
2.4
ꢁꢁ
Min
Max
A
A1
A2
b
0.900
0.000
0.900
0.150
0.
ꢀꢁꢁ
2.000
1.150
2.150
0.035
0.000
0.035
0.006
0.00
ꢂ
0.079
0.045
0.085
0.043
0.004
0.039
0.014
0.006
0.087
0.053
0.09
ꢂ
c
D
E
E1
e
0.650 T
Y
P
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
REEL SPECIFICATION
QTY
P/N
PKG
MMDT3946
SOT-363
3000
MMDT3946
Semiconductor
Compiance
Attention
■
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that can handle applications that require extremely high levels of reliability, such as life-support systems,
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
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Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
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or events cannot occur. Such measures include but are not limited to protective circuits anderror prevention
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■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor productthat you intend to use.
