MSKSEMI-MMST5551
| Part # | MSKSEMI-MMST5551 |
Download  | MSKSEMI-MMST5551 |
MMST5551
Product specification
MMST5551
MARKING
FEATURES
Complementary to MMST5401
PACKAGE OUTLINE
Small Surface Mount Package
1. BASE
Ideal for Medium Power Amplification and Switching
2. EMITTER
3. COLLECTOR
K4N
SOT-323
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
V
CBO
Parameter
Collector-Base Voltage
Value
Unit
180
V
Collector-Emitter Voltage
Emitter-Base Voltage
160
6
V
V
CEO
V
V
EBO
I
C
Collector Current
600
200
625
mA
mW
℃
/W
Collector Power Dissipation
P
C
Thermal Resistance From Junction To Ambient
R
ΘJA
Operation Junction
and
T
J
,T
stg
℃
-55
～
+150
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol Test
conditions
Min
Typ
Max
Unit
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
180
160
V
V
Collector-base breakdown voltage
V
(BR)CBO
Collector-emitter breakdown
voltage
V
(BR)CEO
*
6
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
I
E
=10µA, I
C
=0
V
(BR)EBO
I
CBO
V
CB
=120V, I
E
=0
50
50
nA
nA
V
EB
=4V, I
C
=0
I
EBO
V
CE
=5V, I
C
=1mA
80
100
30
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
V
CE
=10V,I
C
=10mA , f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
300
DC current gain
h
FE
0.2
0.15
1
V
V
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
V
BE(sat)
1
V
100
300
6
MHz
pF
Transition frequency
f
T
Collector output capacitance
C
ob
*Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%.
Copyright© Msksemi Incorporated
MMST5551
I
C
h
FE
——
Static Characteristic
18
15
12
9
500
90uA
COMMON EMITTER
V
CE
=5V
COMMON
EMITTER
T
a
=25
ć
T
a
=100
ć
80uA
70uA
T
a
=25
ć
60uA
50uA
40uA
30uA
I
B
=20uA
100
6
3
0
10
0
2
4
6
8
10
12
1
10
100
200
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
I
C
(mA)
V
BEsat
——
I
C
V
CEsat
—— I
C
1.0
0.8
0.6
0.4
0.2
0.3
ꢀ=10
ꢀ=10
0.1
T
a
=25
ć
T
a
=100
ć
T
a
=100
ć
T
a
=25
ć
0.01
100
200
0.1
1
10
100
1
10
100
200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
I
C
—— V
BE
V
CB
/
V
EB
C
ob
/ C
ib
——
200
COMMON EMITTER
V
CE
=5V
f=1MHz
I
E
=0 / I
C
=0
100
10
1
T
a
=25
ć
C
ib
T
a
=100
ć
T
a
=25
ć
10
C
ob
1
0.1
0.2
0.4
0.6
0.8
1.0
1
10
20
BASE-EMITTER VOLTAGE
V
BE
(V)
REVERSE VOLTAGE
V
(V)
I
C
f
T
——
P
C
—— T
a
0.25
150
100
V
CE
=10V
T
a
=25
ć
0.20
0.15
0.10
0.05
0.00
50
1
10
20
30
0
25
50
75
100
125
150
3
AMBIENT TEMPERATURE
T
a
(
ć
)
COLLECTOR CURRENT
I
C
(mA)
Copyright© Msksemi Incorporated
MMST
5551
PACKAGEMECHANICALDATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
c
D
E
E1
e
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
e1
L
1.200
1.400
0.047
0.055
L1
ꢀ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
Suggested Pad Layout
Note:
1.Controlling dimension:in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only.
REEL SPECIFICATION
P/N
PKG
QTY
MMST
5551
SOT-323
3000
Copyright© Msksemi Incorporated
MMST5551
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
MSKSEMI Semiconductor. strives to supply high-quality high-reliability products. However, any and all semiconductor
products fail with someprobability. It is possiblethat these probabilistic failures could give rise to accidents or events that could
endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing
equipment, adopt safety measures so that these kinds of accidents
or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
■
In the event that any or all MSKSEMI Semiconductor products(including technical data, services) described
or contained
herein are controlled under any of applicable local export control laws and regulations, such products must not be exported
without obtaining the export license from theauthorities
concerned in accordance
with the above law.
■
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
