MSKSEMI-MS13001
| Part # | MSKSEMI-MS13001 |
Download  | MSKSEMI-MS13001 |
Product specification
MS13001
TRANSISTOR (NPN)
PACKAGE OUTLINE
MARKING
FEATURES
1. BASE
2. EMITTER
3.COLLECTOR
power switching applications
:O1CT
SOT-23
MAXIMUM RATINGS (Ta=25
℃
unless otherwise noted)
Symbol
Parameter
Value
Unit
700
V
V
CBO
Collector -Base Voltage
400
9
V
V
V
CEO
V
EBO
I
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
0.2
A
0.35
150
W
℃
℃
P
C
T
J
Storage Temperature
-55~150
T
stg
ELECTRICAL CHARACTERISTICS (Ta=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
Test conditions
Min
700
400
Typ
Max
Unit
V
I
C
= 1mA ,I
E
=0
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
I
C
= 1mA ,I
B
=0
I
E
= 100μA, I
C
=0
V
9
V
V
(BR)EBO
I
CBO
V
CB
= 600V , I
E
=0
V
E
B
=9V, I
C
=0
10
10
40
μA
μA
Emitter cut-off current
I
EBO
V
C
E
= 10V, I
C
= 20mA
10
h
FE(1)
DC current gain
I
C
= 100mA, I
B
= 20 mA
I
C
= 100mA, I
B
= 20mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
0.5
1.2
V
V
V
CE(sat)
V
BE(sat)
f
T
V
CE
= 20V, I
C
=20mA
f = 1MHz
Transition frequency
Storage time
5
MHz
μs
I
C
3.5
t
S
=100mA
Copyright© Msksemi Incorporated
MS13001
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.150
0.100
1.050
0.500
0.150
3.000
1.400
2.550
Min
Max
0.045
0.004
0.041
0.020
0.006
0.118
0.055
0.100
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.300
0.080
2.800
1.200
2.250
0.035
0.000
0.035
0.012
0.003
0.110
0.047
0.089
0.950 T
Y
P
0.550 REF
0.037 T
Y
P
0.022 REF
1.800
2.000
0.071
0.079
L1
θ
0.300
0°
0.500
8°
0.012
0°
0.020
8
°
Suggested Pad Layout
REEL SPECIFICATION
P/N
PKG
QTY
MS13001
SOT-23
3000
Copyright© Msksemi Incorporated
MS13001
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T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
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