MSKSEMI-MS15N10

MS15N10  

Semiconductor  

Compiance  

Schematic diagram  

FEATURE  











Excellent package for good heat dissipation  

Ultra low gate charge  

Low reverse transfer capacitance  

Fast switching capability  

Avalanche energy specified  

VBR:100V  

RDS:70MR@10V  

ID:15A  

TO-252  

MAXIMUM RATINGS ( T

a

=25

℃

unless otherwise noted )  

Parameter  

Drain-Source Voltage  

Symbol  

V

DS  

Limit  

Unit  

100  

±20  

15  

V

V

Gate-Source Voltage  

V

GS  

①

Continuous Drain Current  

I

D  

A

②

Pulsed Drain Current  

I

DM  

60  

A

③

Single Pulsed Avalanche Energy  

Power Dissipation  

E

AS  

49  

mJ  

W

①

P

D  

45  

⑥

Thermal Resistance from Junction to Ambient  

Thermal Resistance from Junction to Case  

R

θJA  

100  

2.78  

℃

/W  

℃

/W  

℃

①

R

θJC  

-55~+150  

Operating Junction and  

T

J

,

T

stg  

Storage Temperature Range  

MS15N10  

Semiconductor  

Compiance  

T =25  

a

unless otherwise specified  

℃

Parameter  

Symbol  

Test Condition  

Min  

Typ  

Max  

Unit  

Off characteristics  

Drain-source breakdown voltage  

V

(BR) DSS  

V

GS

= 0V, I

D

=250µA  

100  

V

1.0  

100  

T

J

=25

℃  

T

J

=125

℃  

V

DS

=80V,  

V

GS

=0V  

I

DSS  

µA  

nA  

Zero gate voltage drain current  

Gate-body leakage current  

I

GSS  

V

DS

=0V, V

GS

=±20V  

±100  

④

On characteristics  

Gate-threshold voltage  

V

GS(th)  

R

DS(on)  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=10V, I

D

=8A  

1.0  

2.5  

70  

3.0  

V

mΩ  

100  

Static drain-source on-sate resistance  

④ ⑤  

Dynamic characteristics  

Input capacitance  

C

iss  

C

oss  

C

rss  

Rg  

773  

46  

1500  

92  

V

DS

=25V,V

GS

=0V,  

f = 100KHz  

pF  

Ω

Output capacitance  

Reverse transfer capacitance  

Gate resistance  

43  

90  

f =1MHz  

1.5  

④ ⑤  

Switching characteristics  

Total gate charge  

Q

g  

Q

gs  

Q

gd  

36  

5.6  

18  

2.8  

7.4  

15  

33  

41  

6

V

GS

=10V, V

DS

=50V,  

I

D

=10A  

nC  

ns  

Gate-source charge  

14.8  

Gate-drain charge  

Turn-on delay time  

t

d  

(on)  

V

DD

=25V,R

L

=5Ω

,  

Turn-on rise time  

t

r  

t

d(off)  

t

f  

V

GS

=10V,R

G

=1.0Ω  

Turn-off delay time  

Turn-off fall time  

Drain-Source Diode Characteristics  

Drain-source diode forward voltage  

④

V

SD  

V

GS

=0V, I

S

=8A  

1.2  

15  

60  

V

A

A

Continuous drain-source diode forward  

current  

①

I

S  

②

Pulsed drain-source diode forward current  

I

SM  

Notes:  

1

.

T

C

=25

℃

Limited only by maximum temperature allowed.  

2

.

P

W

≤10μs, Duty cycle≤1%.  

3

.

EAS condition: V

DD

=25V,V

GS

=10V, L=0.5mH, Rg=25Ω Starting T

J

= 25

℃

.  

4

.

Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.  

5

.

Guaranteed by design, not subject to production.  

6

.

The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T

a

=25

℃

.  

MS15N10  

Semiconductor  

Compiance  

PACKAGE MECHANICAL DATA  

D

A

D1  

c

h

φ

A1  

D2  

b

e

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min.  

2.200  

0.000  

0.635  

0.460  

6.500  

5.100  

Max.  

2.400  

0.127  

0.770  

0.580  

6.700  

5.460  

Min.  

0.087  

0.000  

0.025  

0.018  

0.256  

0.201  

Max.  

A

A1  

b

c

D

D1  

D2  

E

e

L

L1  

L2  

L3  

L4  

Φ

θ

0.094  

0.005  

0.030  

0.023  

0.264  

0.215  

4.830 REF.  

0.190 REF.  

6.000  

2.186  

9.712  

6.200  

2.386  

10.312  

2.900 REF.  

0.236  

0.086  

0.382  

0.244  

0.094  

0.406  

0.114 REF.  

0.063 REF.  

1.400  

1.700  

0.055  

0.067  

1.600 REF.  

0.600  

1.100  

0°  

1.000  

1.300  

8°  

0.024  

0.043  

0°  

0.039  

0.051  

8°  

h

0.000  

0.300  

0.000  

0.012  

V

5.250 REF.  

0.207 REF.  

REEL SPECIFICATION  

P/N  

PKG  

QTY  

MS15N10  

TO-252  

2500  

MS15N10  

Semiconductor  

Compiance  

Attention  

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Any and all MSKSEMI Semiconductor products described or contained herein do not

 

have specifications  

that can handle applications that require extremely high levels of reliability, such as life-support

 

systems,  

aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious  

physical and/or material damage. Consult with your MSKSEMI Semiconductor representative

 

nearest you  

before using any MSKSEMI Semiconductor products described or contained herein in such

 

applications.  

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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or  

other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described  

orcontained herein.  

■

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performance, characteristics, and functions of the described products in the independent state, and are not  

guarantees of the performance, characteristics, and functions of the described products as mounted in the  

customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent  

device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.  

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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and

 

reliable,  

but no guarantees are made or implied regarding its use or any infringementsof intellectual property rights or  

other rightsof third parties.  

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