MSKSEMI-MS50N03
| Part # | MSKSEMI-MS50N03 |
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MS50N03
Product specification
MS50N03
General Features
Application
30V,50A, RDS(ON) =9mΩ@ VGS = 10V
Improved dv/
dt capability
Fast switching
MB / VGA / Vcore
POL Applications
SMPS
2
nd
SR
Green Device Available
BVDSS
30V
RDSON
7m
Ω
ID
50A
Reference News
PACKAGE OUTLINE
Pin Configuration
Marking
MSKSEMI
50N03
BN
TO-252
N-Channel MOSFET
Copyright© Msksemi Incorporated
Absolute Maximum Ratings
T
=
2
5 °C
u
nless otherwise noted
A
Symbol
Rating
Parameter
Units
30
V
V
DS
Drain- Source
Voltage
Gate- Sou
r
ce Voltage
V
V
GS
I
D
±
20
50
Drain Current – Continuous
(
T
C
=
25
C
)
Drain Current – Continuous
(
T
C
=
100
C
)
A
A
30
Drain Current – Pulsed
1
200
A
I
DM
P
D
Power Dissipation
(
T
C
=
25
C
)
30
W
Power Dissipation – Derate above 2
5
℃
W
/
℃
0.32
Storage Temperature Range
-55 to 150
T
STG
T
J
℃
℃
Operating Junction Temperature Range
-55 to 150
Thermal Characteristics
Symbol
Typ.
Parameter
Max.
62
Unit
℃/W
℃/W
–
Thermal Resistance Junction to ambient
R
θJA
R
θJC
Thermal Resistance Junction to Case
3.1
–
Copyright© Msksemi Incorporated
Static State Characteristics
Symbol
Typ.
Parameter
Drain- Source
Breakdown Voltage
Max.
Unit
V
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
BV
DSS
–
–
–
BV
DSS
Temperature Coefficient
Drain- Source
Leakage Current
Reference to 2
5
℃
, I
D
=
1mA
0.04
V/
℃
μA
∆BV
DSS
/ ∆
T
J
–
–
–
–
–
1
V
DS
=
30V ,
V
GS
=0V , T
J
=25
℃
V
DS
=24V
，
V
GS
=0V , T
J
=125
℃
V
GS
=
±
20V , V
DS
=0V
–
–
I
DSS
I
GSS
10
μA
Gate- Source
Leakage Current
μA
±
100
10
–
V
GS
=10V , I
D
=16A
7.0
mΩ
R
DS(ON)
Static Drain-
Source On-
Resistance
3
V
GS
=4.5V , I
D
=8A
9 .0
1.5
-4
18
mΩ
–
Gate Threshold Voltage
1
2.5
V
V
GS
(
t
h)
V
GS
=V
DS
, I
D
=250uA
V
GS( th)
Temperature Coefficient
mV
/
℃
∆
V
GS( th)
–
–
Dynamic Characteristics
Total Gate Charge
3 , 4
7.5
1.3
Q
g
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Gate
–
S
ource Charge
3 , 4
V
DS
=15V , V
GS
=4.5V , I
D
=20A
℃
Q
gs
Gate-Drain Charge
3 , 4
4.5
Q
gd
Turn
–
O
n Delay Time
3 , 4
4.8
T
d(on)
Rise Time
3 , 4
Turn
–
O
ff Delay Time
3 , 4
12.5
27.6
8.2
T
r
ns
V
DD
=15V , V
GS
=10V ,
T
d(off)
R
G
=3.3
Ω
I
D
=15A
Fall Time
3 , 4
T
f
Input Capacitance
1100
150
110
2.7
C
iss
V
DS
=25V , V
GS
=0V , F=1MHz
V
GS
=0V, V
DS
=0V, F=1MHz
pF
Output Capacitance
C
oss
Reverse Transfer Capacitance
C
rss
Gate resistance
R
g
Ω
–
–
Guaranteed Avalanche Energy
Symbol
Parameter
Conditions
Min.
Typ.
Max. Unit
EAS
Single Pulse Avalanche Energy
VDD=25V,L=0.1mH,IAS=15A
12
–
–
mJ
Drain-Source Diode Characteristics
Symbol
Typ.
Parameter
Continuous Source Current
Pulsed Source Current
3
Diode Forward Voltage
3
Max.
50
Unit
Conditions
Min.
A
A
V
I
S
I
SM
V
SD
–
–
–
–
–
–
V
G
=
V
D
=0V , Force Current
200
1.2
V
GS
=
0V ,
I
S
=1A , T
J
=25
℃
Copyright© Msksemi Incorporated
PACKAGE MECHANICAL DATA
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
Max.
Min.
Max.
A
A1
b
2.200
0.000
0.635
0.460
6.500
5.100
2.400
0.127
0.770
0.580
6.700
5.460
0.087
0.000
0.025
0.018
0.256
0.201
0.094
0.005
0.030
0.023
0.264
0.215
c
D
D1
D2
4.830 REF.
0.190 REF.
E
e
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L
L1
L2
L3
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
L4
Φ
θ
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
Suggested Pad Layout
Note:
1.Controlling dimension:in millimeters.
2.General tolerance:±0.05mm.
3.The pad layout is for reference purposes only
P/N
PKG
QTY
MS50N03
TO-252
2500
Copyright© Msksemi Incorporated
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■
Any and all MSKSEMI Semiconductor products described or contained herein do not
have specifications
that can
handle applications that require extremely high levels of reliability, such as life-support
systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with
your MSKSEMI Semiconductor representative
nearest you
before using any MSKSEMI Semiconductor products described
or contained herein in such
applications.
■
MSKSEMI Semiconductor assumes no responsibility for equipment failures that result from using products
at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specificationsof any andall MSKSEMI Semiconductor products described orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.
T
o
verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test
devices mounted in the customer’sproducts orequipment.
■
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or events cannot occur. Such measures include but are
not limited to protective circuits anderror prevention circuitsfor safedesign, redundant design, and structural design.
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written permission of MSKSEMI Semiconductor.
■
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume
production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or
implied regarding its use or any infringementsof intellectual property rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the MSKSEMI
Semiconductor productthat you intend to use.
Copyright© Msksemi Incorporated
