MSKSEMI-MSK30P02DF
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MSK30P02DF
Semiconductor
Compiance
Description
The MSK30P02DF
is the high cell density trenched
P-ch MOSFETs,
which provide excellent
RDSON and gate charge for most of the
synchronous buck converter applications.
The MSK30P02DF
meet the RoHS and Green
Product requirement with full function reliability
approved.
D
D
D
D
S
S
S
G
DFN3X3-8L
Product Summary
BVDSS
RDSON
ID
-20V
-30A
10mΩ
Super Low Gate Charge
Green Device Available
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
P-Channel MOSFET
Absolute Maximum Ratings
Units
Symbol
Parameter
Rating
V
DS
V
GS
-20
V
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
12
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
I
D
@T
C
=25
℃
-30
-18
-68
18
A
I
D
@T
C
=70
℃
A
I
DM
A
Total Power Dissipation
3
P
D
@T
C
=25
℃
P
D
@T
C
=70
℃
T
STG
W
W
℃
℃
Total Power Dissipation
3
12
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Unit
℃
/W
℃
/W
℃
/W
Symbol
R
θJA
Parameter
Max.
75
1
Thermal Resistance Junction-Ambient
Thermal Resistance
Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
40
R
θJA
4.2
R
θJC
MSK30P02DF
Semiconductor
Compiance
Electrical Characteristics (T
J
=25
, unless otherwise noted)
Unit
Symbol
Parameter
Conditions
Min.
-20
—
Typ.
—
Max.
—
BV
DSS
V
Drain-Source Breakdown
Voltage
BV
DSS
Temperature Coefficient
V
GS
=0V , I
D
=-250uA
△
BV
DSS
/△
T
J
V/
℃
Reference to 25
℃
, I
D
=-1mA
-0.012
10
—
15
V
GS
=-4.5V , I
D
=-10A
V
GS
=-2.5V , I
D
=-8A
—
Static Drain-Source On-Resistance
2
13
R
DS(ON)
18
—
m
-0.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-0.7
2.94
—
-1.0
—
V
mV/
℃
uA
V
GS(th)
Gate Threshold Voltage
V
GS(th)
Temperature Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
DS
=-15V , V
GS
=0V , T
J
=25
℃
V
GS
=
±
12 V , V
DS
=0V
I
DSS
I
GSS
gfs
1
±
100
nA
—
43
S
V
DS
=-5V , I
D
=-10A
—
—
—
—
—
—
—
—
—
—
—
35
Q
g
nC
ns
V
DS
=-10V , V
GS
=-4.5V , I
D
=-10A
5.0
10
Q
gs
Q
gd
T
d(on)
T
r
12.0
40.0
30
Turn-On Delay Time
Rise Time
V
DD
=-10V , V
GS
=-4.5V ,
R
G
=3.3 ,
I
D
=-10A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
10
2800
690
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
590
Reverse Transfer Capacitance
Diode Characteristics
Unit
A
Symbol
Parameter
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
–
1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
-30.0
—-
I
S
I
SM
V
SD
t
rr
A
—
—
-1.2
—
V
—
—
27
nS
nC
—
I
F=-10A , dI/dt=100A/µs ,
17.8
Q
rr
—
—
T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data
is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
MSK30P02DF
Semiconductor
Compiance
Typical Characteristics
20
16
2
8
I
D
=-14A
4
0
1
3
4
5
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
9
50
℃
℃
T
J
=25
T
J
=1
6
3
0
0
0.3
0.6
0.9
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
1 . 8
. 4
. 0
. 6
1.4
1
0.6
0.2
0 . 2
–
5 0
0
50
100
150
-50
0
50
100
150
T
J
, J
u n c t i o n
T e m p
)r
Tj ,Junction Temperature (
℃
)
Fig.5 Normalized
V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
MSK30P02DF
Semiconductor
Compiance
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
P
DM
T
ON
T
D = T
ON
/T
T
J
peak = T
A
+ P
DM
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
MSK30P02DF
Semiconductor
Compiance
DFN3X3-8L Package Information
Dimensions In Millimeters
Symbol
Min.
0.70
0.25
0.10
3.25
3.00
1.48
Nom.
0.75
0.30
0.15
3.35
3.10
1.58
0.13
3.30
3.15
2.49
Max.
A
b
0.80
0.35
0.25
3.45
3.20
1.68
c
D
D1
D2
D3
E
–
–
3.20
3.40
E1
E2
e
3.00
2.39
3.20
2.59
0.65BSC
H
0.30
0.30
0.39
0.40
0.13
*
0.50
0.50
L
L1
M
–
–
*
0.15
。
。
θ
10
12
REEL SPECIFICATION
QTY
PKG
P/N
5000
MSK30P02DF
DFN3X3-8L
MSK30P02DF
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control
systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or
material damage. Consult with your MSKSEMI Semiconductor representative nearest you
before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the
customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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fail with someprobability. It is possiblethat these probabilistic failures could give rise to
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without the prior written permission of MSKSEMI Semiconductor.
■
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guaranteed for
volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but
no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
■
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement,
etc. Whendesigning equipment, referto the “Delivery Specification” for the
MSKSEMI Semiconductor
productthat you intend to use.
