MSKSEMI-NTTFS5826NL-MS

NTTFS5826NL-MS  

Product specification  

NTTFS5826NL-MS  

Description  

The NTTFS5826NL-MS uses advanced trench technology to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.  

Application  

Features  







Battery protection  



VDS = 60V ID =20 A  

Load switch  



RDS(ON) < 40mΩ @ VGS=10V  

Uninterruptible power supply  

Reference News  

PACKAGE OUTLINE  

N-Channel MOSFET  

Marking  

MSKSEMI  

5826NL  

N60  

PIN1  

DFN3X3-8L  

Absolute Maximum Ratings (TC=25

℃

unless otherwise noted)  

Symbol  

Parameter  

Rating  

Units  

V

DS  

Drain-Source Voltage  

60  

V

V

GS  

V

A

Gate-Sou

r

ce Voltage  

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

±

20  

20  

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

I

DM  

10  

A

46  

A

EAS  

Single Pulse

 

Avalanche Energy

3  

Avalanche Current  

25.5  

mJ  

A

I

AS  

20  

Total Power Dissipation

4  

34.7  

W

P

D

@T

C

=25

℃  

-55 to 175  

-55 to 175  

T

STG  

T

J  

Storage Temperature Range  

Operating Junction Temperature Range  

℃

℃

1

Thermal Resistance

 

Junction-Ambient  

62  

℃

/W  

R

θJA  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

AElectrical Characteristics

(T

J

=25

℃

unless otherwise specified)  

Symbol  

Parameter  

Test Condition

 

Min. Typ. Max. Units  

Off Characteristic  

V

GS

=0V, I

D

=250μA  

V

DS

=60V, V

GS

= 0V,  

V

DS

=0V, V

GS

= ±20V  

Drain-Source Breakdown Voltage  

Zero Gate Voltage Drain Current  

Gate to Body Leakage Current  

60  

V

V

(BR)DSS  

I

DSS  

–

–

–

–

1.0  

μA  

μA  

–

–

I

GSS  

±100  

On Characteristics  

V

DS

=V

GS

, I

D

=250μA  

V

GS

=10V, I

D

=5A  

V

GS

=4.5V, I

D

=3A  

Gate Threshold Voltage  

1.0  

1.6  

31  

36  

2.5  

40  

50  

V

V

GS(th)  

Static Drain-Source on-Resistance  

note3  

–

–

mΩ  

R

DS(on)  

Dynamic Characteristics  

C

iss  

C

oss  

C

rss  

Q

g  

Input Capacitance  

1148  

58.5  

49.4  

20.3  

3.7  

pF  

pF  

pF  

nC  

nC  

nC  

–

–

–

–

–

–

–

–

–

–

–

–

V

DS

=25V, V

GS

=0V,  

f=1.0MHz  

Output Capacitance  

Reverse Transfer Capacitance  

Total Gate Charge  

V

DS

=30V, I

D

=2.5A,  

V

GS

=10V  

Q

gs  

Q

gd  

Gate-Source Charge  

Gate-Drain(“Miller”) Charge  

5.3  

Switching Characteristics  

t

d(on)  

t

r  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

7.6  

20  

15  

24  

ns  

ns  

ns  

ns  

–

–

–

–

–

–

–

–

V

DS

=30V, I

D

=5A,  

t

d(off)  

t

f  

R

G

=1.8Ω, V

GS

=10V  

Drain-Source Diode Characteristics and Maximum Ratings  

Maximum Continuous

 

Drain to Source Diode Forward  

Current  

5

A

A

I

S  

–

–

–

–

–

–

–

I

SM  

V

SD  

trr  

Maximum Pulsed Drain to Source Diode Forward Current  

20  

1.2  

Drain to Source Diode Forward  

V

GS

=0V, I

S

=5A  

V

–

Voltage  

Body Diode Reverse Recovery Time  

29  

ns  

nC  

–

–

IF=5A, dI/dt=100A/μs  

Body Diode Reverse Recovery  

Charge  

Qrr  

43  

Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature  

2. EAS condition : T

J

=25

℃

,V

DD

=30V,V

G

=10V,L=0.5mH,Rg=25Ω,I

AS

=8.7A  

3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5%  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

Typical Performance Characteristics  

Figure1:

Output Characteristics  

Figure 2:

Typical Transfer Characteristics  

Figure 3:

On-resistance vs. Drain Current  

Figure 4

: Body Diode Characteristics  

Figure 5:

Gate Charge Characteristics  

Figure 6:

Capacitance Characteristics  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

Figure 7:

Normalized Breakdown Voltage vs.  

Figure 8:

Normalized on Resistance vs.  

Junction Temperature  

Junction Temperature  

Figure 9:

Maximum Safe Operating Area  

Figure 10:

Maximum Continuous Drain Current vs.  

Ambient Temperature  

Figure.11:

Maximum Effective  

Transient Thermal Impedance, Junction-to-Ambient  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

Test Circuit  

Figure1:Gate Charge Test Circuit & Waveform  

Figure 2: Resistive Switching Test Circuit & Waveforms  

Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

DFN3X3-8

L

P

ackag

e

I

nformation  

Dimensions In Millimeters  

Symbol  

Min.  

0.70  

0.25  

0.10  

3.25  

3.00  

1.48  

Nom.  

0.75  

0.30  

0.15  

3.35  

3.10  

1.58  

0.13  

Max.  

0.80  

0.35  

0.25  

3.45  

3.20  

1.68  

A

b

c

D

D1  

D2  

D3  

–

–

E

E1  

E2  

e

3.20  

3.00  

2.39  

3.30  

3.15  

2.49  

3.40  

3.20  

2.59  

0.65BSC  

H

L

0.30  

0.30  

0.39  

0.40  

0.13  

0.50  

0.50  

L1  

–

–

M

0.15  

*

*

。

。

θ

10  

12  

REEL SPECIFICATION  

P/N  

PKG  

QTY  

NTTFS5826NL-MS  

DFN3X3-8L  

5000  

Copyright© Msksemi Incorporated  

NTTFS5826NL-MS  

Attention  

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have specifications

 

that can  

handle applications that require extremely high levels of reliability, such as life-support

 

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nearest you

 

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or contained herein in such

 

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performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment.

T

o  

verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test  

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