MSKSEMI-SI2300DS-T1-MS
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SI2300DS-T1-MS
Semiconductor
Compiance
Description
The
SI2300DS-T1-MS
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5
V
. This
device is suitable for use as a
D
S
G
SOT23-3L
Battery protection or in other Switching application.
PIN2 D
General Features
!
V
DS
= 20V
I
D
=6 A
“
! ”
R
DS(ON)
< 27mΩ @ V
GS
=4
.
5V
“
!
PIN1 G
“
!
Application
PIN3 S
Battery protection
N-Channel MOSFET
Load switch
Uninterruptible power supply
Absolute Maximum Ratings (T
A
=25
℃
unless otherwise noted)
Symbol
V
DS
Parameter
Limit
20
Unit
Drain-Source Voltage
Gate-Source Voltage
V
V
±12
V
GS
6
T
A
=25
℃
T
A
=70
℃
Continuous Drain Current
A
I
D
3.6
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
15
A
W
I
DM
1.25
-55
T
o
1
50
100
P
D
Operating Junction and Storage
T
e
mperature Range
Thermal Resistance,Junction-to-Ambient
(Note 2)
℃
T
J
,T
STG
R
θJA
℃
/W
SI2300DS-T1-MS
Semiconductor
Compiance
Electrical Characteristics (T
A
=25
℃
unless otherwise noted)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Symbol
BV
DSS
I
DSS
Condition
Min Typ
Max Unit
V
GS
=0V I
D
=250μA
V
DS
=20
V
,
V
GS
=0V
V
GS
=±12
V
,
V
DS
=0V
V
DS
=V
GS
,I
D
=250μA
V
GS
=4.5
V
,
I
D
=4.0 A
V
GS
=2.5
V
,
I
D
=4.5A
V
DS
=10
V
,
I
D
=4A
20
22.5
–
–
V
μA
nA
V
–
–
1
I
GSS
–
±100
V
GS(th)
0.5
–
0.65
22
28
10
500
295
96
11
30
35
10
10
2.3
2.9
–
1.0
27
mΩ
mΩ
S
Drain-Source On-State Resistance
R
DS(ON)
–
40
Forward Transconductance
Input Capacitance
g
FS
C
lss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
V
DS
=8
V
,
V
GS
=0
V
,
F=1.0MHz
Output Capacitance
–
–
Reverse Transfer Capacitance
Turn-on Delay Time
–
–
–
–
–
Turn-on Rise Time
–
V
DD
=10
V
,
I
D
=1A
V
GS
=4.5
V
,
R
GEN
=6Ω
Turn-Off Delay Time
Turn-Off Fall Time
t
d(off)
t
f
–
–
–
–
T
o
tal Gate Charge
Q
g
–
15
–
Gate-Source Charge
Gate-Drain Charge
Q
gs
Q
gd
V
SD
I
S
–
V
DS
=10
V
,
I
D
=3A,V
GS
=4.5V
V
GS
=0
V
,
I
S
=1A
–
–
Diode Forward Voltage
(Note 3)
Diode Forward Current
(Note 2)
–
1.2
4.5
–
–
A
Notes:
1.
Repetitive rating: pulse width limited by maximum junction temperature.
2.
Surface mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse test: pulse width ≤ 300μs, duty cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
SI2300DS-T1-MS
Semiconductor
Compiance
Typical Electrical and Thermal Characteristics
Vdd
t
on
t
off
t
f
t
r
t
d(on)
V
OUT
V
IN
t
d(off)
Rl
Vin
90%
90%
D
Vout
Vgs
INVERTED
Rgen
10%
90%
G
10%
50%
S
50%
10%
PULSE WIDTH
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
SI2300DS-T1-MS
Semiconductor
Compiance
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs. Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
SI2300DS-T1-MS
Semiconductor
Compiance
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
SI2300DS-T1-MS
Semiconductor Compiance
PACKAGE MECHANICAL DATA
Di
m
e
nsions In Millimeters
Di
m
e
nsions In Inches
S
y
mbol
Min.
1.050
0.000
1.050
0.300
0.100
2.820
1.500
2.650
Max.
1.250
0.100
1.150
0.500
0.200
3.020
1.700
2.950
Min.
0.041
0.000
0.041
0.012
0.004
0.111
0.059
0.104
Max.
0.049
0.004
0.045
0.020
0.008
0.119
0.067
0.116
A
A1
A2
b
c
D
E1
E
e
0.950(BSC)
0.037(BSC)
e1
L
1.800
0.300
0°
2.000
0.600
8°
0.071
0.012
0°
0.079
0.024
8°
ꢀ
REEL SPECIFICATION
QTY
P/N
PKG
SI2300DS-T1-MS
SOT-23
-3L
3000
SI2300DS-T1-MS
Semiconductor
Compiance
Attention
■
Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious
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before using any MSKSEMI Semiconductor products described or contained herein in such applications.
■
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at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specificationsof any andall MSKSEMI Semiconductor products described
orcontained herein.
■
Specifications of any and all MSKSEMI Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer’sproducts orequipment.
■
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without the prior written permission of MSKSEMI Semiconductor.
■
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guaranteed for volume production. MSKSEMI Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringementsof intellectual property
rights or other rightsof third parties.
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product/technology improvement, etc. Whendesigning equipment, referto the “Delivery Specification” for the
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