MSKSEMI-STU417S
| Part # | MSKSEMI-STU417S |
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STU417S
Semiconductor Compiance
Description
The
STU417S
uses advanced trench technology
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 4.5
V
. This
device is suitable for use as a
TO-252
Battery protection or in other Switching application.
D
General Features
V
DS
= -40V
I
D
=-40A
G
R
DS(ON)
< 21 m
Ω
@
V
GS
=10V
Application
S
P-Channel MOSFET
Battery protection
Load switch
Uninterruptible power supply
Absolute Maximum Ratings (T
C
=25
℃
unless otherwise noted)
Symbol
VDS
Parameter
Rating
Units
V
Drain-Source Voltage
-40
±
20
-40
VGS
V
Gate-Sou
r
ce Voltage
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
IDM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
-25
A
-144
A
P
D
@T
C
=25
℃
TSTG
T
o
tal Power Dissipation
4
Storage
T
e
mperature Range
30
W
-55 to 150
-55 to 150
62
℃
T
J
Operating Junction
T
e
mperature Range
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
℃
R
θ
JA
℃
/W
℃
/W
R
θ
JC
2.5
STU417S
Semiconductor Compiance
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max Units
Off Characteristics
Drain-Sourtce Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
GS
=0V,I
D
=-250
μ
A
V
GS
=0V, V
DS
=-40V
V
GS
=
±
20V, V
DS
=0A
-40
—
—
—
—
—
-1
V
BV
DSS
μ
A
nA
I
DSS
I
GSS
—
±
100
On Characteristics
V
GS(th)
GATE-Source Threshold Voltage
Drain-Source On Resistance
Forward Transconductance
V
GS
=V
DS
, I
D
=-250
μ
A
V
GS
=-10V,I
D
=-20A
V
GS
=-4.5V,I
D
=-15A
V
DS
=-5V, I
D
=-5A
-1.1
—
-1.7
15
-2.5
21
V
m
Ω
S
R
DS(ON)
—
21
32
15
—
—
G
FS
Dynamic Characteristics
Input Capacitance
—
—
—
2050
260
—
—
—
C
iss
C
oss
C
rss
Output Capacitance
V
DS
=-20V, V
GS
=0V, f=1MHz
pF
Reverse Transfer Capacitance
150
Switching Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
10
24
40
9
—
—
—
—
—
—
—
ns
ns
ns
ns
nC
nC
nC
t
d(on)
t
r
t
d(off)
t
f
Rise Time
V
DS
=-20V, R
L
=1.6
Ω
R
GEN
=3
Ω
, V
GS
=-10V
Turn-Off Delay Time
Fall Time
T
o
tal Gate Charge
Gate-Source Charge
Gate-Drain
“
Miller
”
Charge
45
6
Q
g
V
GS
=-10V, V
DS
=-20V,
I
D
=-8A
Q
gs
Q
gd
11
Drain-Source Diode Characteristics
Source-Drain Diode Forward Voltage
Source-Drain Current(Body Diode)
V
GS
=0V,I
S
=-10A,
—
—
-1.2
V
V
SD
—
—
-36
A
I
SD
Notes:
1.Repetitive Rating: Pulse width limited by maximum junction temperature
STU417S
Semiconductor Compiance
Typical Characteristics
Figure1. Power Dissipation
Figure2. Drain Current
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure3. Output Characteristics
Figure4. Transfer Characteristics
Figure5. Capacitance
Figure6. R
DS(ON)
vs Junction Temperature
-VDS Drain-to-Source Voltage(V)
STU417S
Semiconductor Compiance
Figure7. V
GS(th)
vs Junction Temperature
Figure8. Gate Charge Waveforms
Qg(nC)
Figure9. Normalized Maximum Transient Thermal Impedance
STU417S
Semiconductor Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
h
φ
A1
D2
b
e
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
2.200
0.000
0.635
0.460
6.500
5.100
Max.
2.400
0.127
0.770
0.580
6.700
5.460
Min.
0.087
0.000
0.025
0.018
0.256
0.201
Max.
0.094
A
A1
b
c
D
D1
D2
E
e
L
0.005
0.030
0.023
0.264
0.215
4.830 REF.
0.190 REF.
6.000
2.186
9.712
6.200
2.386
10.312
0.236
0.086
0.382
0.244
0.094
0.406
L1
L2
L3
L4
Φ
θ
2.900 REF.
0.114 REF.
0.063 REF.
1.400
1.700
0.055
0.067
1.600 REF.
0.600
1.100
0°
1.000
1.300
8°
0.024
0.043
0°
0.039
0.051
8°
h
0.000
0.300
0.000
0.012
V
5.250 REF.
0.207 REF.
REEL SPECIFICATION
QTY
P/N
PKG
STU417S
TO-252
2500
STU417S
Semiconductor Compiance
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orcontained herein.
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