NATLINEAR-NP2060G
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NP2060G
20V N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP2060G uses advanced trench technology
D
to provide excellent R
DS(ON)
and low gate charge.It can
be used in a wide variety of applications.
G
General Features
V
DS
=20V
，
I
D
=60A
S
R
DS(ON)
(Typ.)=4.8
mΩ @V
GS
=4.5V
R
DS(ON)
(Typ.)= 6.2
mΩ @V
GS
=2.5V
Marking and pin assignment
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high E
AS
Excellent package for good heat dissipation
Special process technology for high ESD capability
TO-252-2L
（
T
o
p View
）
Application
Automotive applications
Hard switched and high frequency circuits
Uninterruptible power supply
XXXX
—
Wafer Information
YYYY
—
Quality Code
Package
HF
Pb
TO-252-2L
Ordering Information
Storage Temperature
Package
Devices Per Reel
2500
Part Number
-55°C to +150°C
TO-252-2L
NP2060G
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
Drain-source voltage
Gate-source voltage
symbol
limit
20
unit
V
V
DS
V
GS
±12
60
V
TC=25°C
Continuous Drain Current
I
D
A
TC=100°C
42
Pulsed Drain Current
Avalanche energy( L=0.5mH)
（
Maximum power dissipation
I
DP
E
AS
P
D
Tj
210
200
60
A
mJ
W
）
note1
TC=25°C
Operating junction
T
e
mperature range
-55
—
150
℃
Rev.1.1
—
Oct. 26. 2017
1
NP2060G
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-source breakdown voltage
BV
DSS
I
DSS
V
GS
=0
V
,
I
D
=250µA
V
DS
=20V, V
GS
=0V
20
–
–
–
V
T
J
=25°C
T
J
=85°C
–
–
1
Zero gate voltage drain current
µA
–
5
Gate Leakage Current
Gate threshold voltage
I
GSS
V
DS
=0
V
,
V
GS
=±12V
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5
V
,
I
D
=60A
V
GS
=2.5V, I
D
=40A
–
–
±100
nA
V
V
GS(th)
0.5
–
0.75
4.8
6.2
–
1.2
6
Drain-source on-state resistance
1
R
DS(ON)
mΩ
–
9
On Status Drain Current
Gate resistance
I
D(ON)
R
G
V
DS
=20V, V
GS
=4.5V
60
–
–
A
1.2
–
Ω
Diode Characteristics
Diode Continuous Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
2
Input capacitance
I
S
t
rr
–
–
–
–
12
–
A
25
24
ns
nC
I
F
=20A,
dI/dt=20A/us
Q
rr
–
C
ISS
C
OSS
C
RSS
t
D(ON)
tr
–
–
–
–
–
–
–
–
–
–
3415
482
78
–
–
–
–
–
–
–
–
–
–
V
GS
=0V ,V
DS
=10V
f=1.0MHz
Output capacitance
pF
ns
Reverse transfer capacitance
Turn-on delay time
6.5
17
Turn-on Rise time
V
GS
=4.5
V
, V
DS
=10V, I
D
=2A
Turn-off delay time
t
D(OFF)
tf
29.5
17
Turn-off Fall time
T
o
tal gate charge
Q
g
82
V
GS
=10V,I
D
=60A
V
DS
=10V
Gate-source charge
Q
gs
4.7
10.7
nC
V
Gate-drain charge
Q
gd
Drain-Source Diode Characteristics
Diode forward voltage
V
SD
I
SD
=10A,V
GS
=0V
–
0.8
1.2
Note: 1
：
Eas test
：
VDD=10V
，
RG=25ohm
，
L=500uH
2
：
Pulse test; pulse width
≦
300ns, duty cycle
≦
2%.
3
：
Guaranteed by design, not subject to production testing.
Rev.1.1
—
Oct. 26. 2017
2
NP2060G
Typical Performance Characteristics
90
90
81
72
63
54
45
36
27
18
9
81
72
4.5V
63
3.
3V
54
2.5V
45
36
27
18
9
1.5V
2.5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
3.0
3.5
4.0
4.5
5.0
Vds Drain-Source Voltage(V)
Vgs Gate-Source Voltage(V)
Fig1 Output Characteristics
Fig2 Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
20
18
16
14
12
10
8
Ciss
V
GS
=2.5V
V
GS
=4.5V
6
Coss
Crss
4
2
0
0
0
6
12
18
24
30
36
42
48
54
60
0
1
2
3
4
5
6
7
8
9
10
I
D
-Drain Current(A)
Fig3 Rdson-Drain current
Vds Drain-Source Voltage(V)
Fig4 Capacitance vs Vds
100
90
80
70
60
50
40
30
20
10
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
5
10
15
20
25
30
35
40
45
50
Vgs Gate-Source Voltage(V)
Qg Gate Charge(nC)
Fig5 Rdson-Gate
Drain voltage
Fig6 Gate Charge
Rev.1.1
—
Oct. 26. 2017
3
NP2060G
100
90
80
70
60
50
40
30
20
10
0
100
10
1
0.1
0
15
30
45
60
75
90
105 120 135 150
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TJ-Junction Temperature
(
º
C
)
Vsd Source -Gate Voltage(V)
Fig7 Power De-rating
Fig8 Source-Drain Diode Forward
Rev.1.1
—
Oct. 26. 2017
4
