NATLINEAR-NP2N7002VR-G

NP2N7002VR  

60V N-Channel Enhancement Mode MOSFET  

Description  

Schematic diagram  

The NP2N7002VR uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 1.8V. This device  

is suitable for use as a load switch or in PWM  

applications.  

General Features  

V

DS

=60V

，

I

D

=340mA  



R

DS(ON)

(Typ.)=1.

15

Ω @V

GS

=10V  

R

DS(ON)

(Typ.)=

1

.2

5

Ω @V

GS

=4.5V  

Marking and pin assignment  









High power and current handing capability  

Lead free product is acquired  

Surface mount package  

ESD Rating: 2000V HBM  

Application  





PWM applications  

Load switch  

Package  



SOT-23-3L  

Ordering Information  

Storage Temperature  

Package  

Devices Per Reel  

3000  

Part Number  

-55°C to +150°C  

SOT-23-3L  

NP2N7002VR-G  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

parameter  

Drain-source voltage  

Gate-source voltage  

symbol  

limit  

60  

unit  

V

V

DS  

V

GS  

I

D  

±20  

0.34  

0.3  

V

Drain current-continuous

a

@Tj=125

℃

 

-p

ulse

d

b  

A

I

DM  

P

D  

Tj  

A

Maximum power dissipation  

T

A

=25

℃  

0.15  

W

℃

Operating junction

T

emperature range  

-55—150  

Notes:  

a.

surface mounted on FR4 board,t≤10sec  

b.

pulse test: pulse width≤300μs,duty≤2%  

Rev.1.1

—

Oct. 26. 2017  

1

NP2N7002VR  

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

OFF Characteristics  

Symbol  

Condition  

Min  

Typ  

Max Unit  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage  

BV

DSS  

I

DSS  

V

GS

=0V, I

D

=250µA  

V

DS

=48V, V

GS

=0V  

V

DS

=0V, V

GS

=±20V  

60  

–

–

–

–

–

1

V

µA  

µA  

I

GSS  

–

±10  

ON Characteristics  

Gate threshold voltage  

V

GS(th)  

V

DS

=V

GS

, I

D

=250µA  

V

GS

=

10

V, I

D

=200mA  

V

GS

=

4.5

V, I

D

=200mA  

1

–

1.

4  

2.5  

V

1.

1

5

2.5  

Drain-source on-state resistance  

Recovered charge  

R

DS(ON)  

Ω

1.25  

–

3.5  

V

GS

=0V I

S

=300mA  

V

R

=25V  

dI

S

/d

t

=-100A/uS  

Q

r  

–

30  

–

nC  

pF  

Dynamic Characteristics  

Input capacitance  

C

ISS  

C

OSS  

C

RSS  

–

–

–

14.8  

3.6  

–

–

–

V

DS

=30V ,V

GS

=0V  

f=1.0MHz  

Output capacitance  

Reverse transfer capacitance  

Switching Characteristics  

Turn-on delay time  

Rise time  

2.1  

V

DD

=5V  

V

GS

=10V  

R

L

=250ohm  

R

GEN

=50ohm  

t

D(ON)  

tr  

–

–

–

–

–

–

–

10  

–

30  

–

ns  

nC  

V

Turn-off delay time  

Total gate charge  

t

D(OFF)  

Qg  

15  

–

1.3  

0.4  

0.1  

V

DS

=30V,I

D

=200mA  

V

GS

=10V  

Gate-source charge  

Gate-drain charge  

Qgs  

Qgd  

–

–

DRAIN-SOURCE DIODE CHARACTERISTICS  

Diode forward voltage  

V

SD  

V

GS

=0V,Is=300mA  

–

–

1.5  

Thermal Characteristics  

Parameter  

Symbol  

Typ  

max Unit  

Thermal Resistance-Junction to Case  

Thermal Resistance junction-to ambient  

Rθjc  

1.7  

–

℃

/W  

RθJa  

62.5  

–

Rev.1.1

—

Oct. 26. 2017  

2

NP2N7002VR  

Typical Performance Characteristics  

Rev.1.1

—

Oct. 26. 2017  

3

NP2N7002VR  

Rev.1.1

—

Oct. 26. 2017  

4

NP2N7002VR  

Package Information  



SOT-23-3L  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

Min  

Max  

A

A1  

A2  

b

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

c

D

E

E1  

e

0.950(BSC)  

0.037(BSC)  

e1  

L

1.800  

0.300  

0°  

2.000  

0.600  

8°  

0.071  

0.012  

0°  

0.079  

0.024  

8°  

θ

Rev.1.1

—

Oct. 26. 2017  

5