NATLINEAR-NP3090G
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NP3090G
30V N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP3090G uses advanced trench technology
D
and design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of
applications.
G
General Features
S
V
DS
=30V
，
I
D
=90A
R
DS(ON)
(Typ.)=3.8m
Ω @V
GS
=10V
R
DS(ON)
(Typ.)=6m
Ω @V
GS
=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
G
Application
3090
NP
XXXX
YYYY
Load switch
Package
TO-252-2L
XXXX—Wafer Information
YYYY—Quality Code
Ordering Information
Storage Temperature
Package
Devices Per Reel
Part Number
-55°C to +150°C
TO-252-2L
2500
NP3090G
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
Drain-source voltage
Gate-source voltage
symbol
limit
30
unit
V
V
DS
V
GS
±20
90
V
TC=25°C
Continuous Drain Current
I
D
A
TC=100°C
70
Pulsed Drain Current
Avalanche Current
Avalanche energy( L=0.5mH)
（
I
DP
IAS
EAS
200
30
A
A
）
note1
112
85
mJ
TC=25°C
Maximum power dissipation
P
D
W
TC=100°C
44
Rev.1.1
—
Aug.24. 2020
1
NP3090G
Operating junction
T
e
mperature range
Tj
-55—150
℃
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
Static Characteristics
Drain-source breakdown voltage
BV
DSS
V
GS
=0V,
I
D
=250µA
30
–
–
–
–
V
V
DS
=30V, V
G
S
=0V
T
J
=85°C
–
–
1
Zero gate voltage drain current
I
DSS
µA
30
Gate Leakage Current
Gate threshold voltage
I
GSS
V
DS
=0V, V
GS
=±20V
V
DS
=V
GS
, I
D
=250µA
–
–
2
±100
2.8
5.2
7.2
–
nA
V
V
GS(th)
1.2
–
V
GS
=10V, I
D
=20A
3.8
6
Drain-source on-state resistance
1
R
DS(ON)
I
D(ON)
mΩ
V
GS
=4.5V, I
D
=20A
–
On Status Drain Current
Diode Characteristics
Diode Forward Voltage
1
Diode Continuous Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Dynamic Characteristics
2
Gate Resistance
V
DS
=10V, V
GS
=10V
90
–
A
V
SD
I
S
I
SD
=50A,V
GS
=0V
–
–
–
–
0.8
90
34
30
1.1
V
A
–
–
–
t
rr
ns
nC
I
F
=20A,
dI/dt=100A/us
Q
rr
R
G
C
ISS
C
OSS
C
RSS
t
D(ON)
tr
V
GS
=0V, V
DS
=0V,f=1MHz
–
–
–
–
–
–
–
–
–
0.65
1631
240
212
12
–
–
–
–
–
–
–
–
Ω
Input capacitance
V
GS
=0V ,V
DS
=15V
Output capacitance
pF
f=1.0MHz
Reverse transfer capacitance
Turn-on delay time
Turn-on Rise time
14.5
40
V
GS
=10V, V
DS
=15V,
ns
R
L
=20
Ω,
I
D
=1A, R
G
=6
Ω
Turn-off delay time
t
D(OFF)
tf
Turn-off Fall time
15
T
o
tal gate charge
Q
g
34
V
V
GS
=10V,I
D
=20A
DS
=15V
Gate-source charge
Q
gs
Q
gd
4.8
7.5
nC
V
Gate-drain charge
–
–
–
Drain-Source Diode Characteristics
Diode forward voltage
V
SD
I
SD
=90A,V
GS
=0V
0.8
1.2
Note: 1
：
Pulse test; pulse width
≦
300ns, duty cycle
≦
2%.
2
：
Guaranteed by design, not subject to production testing.
Thermal Characteristics
Parameter
Symbol
Rθjc
Typical
1.7
Unit
℃
/W
Thermal Resistance-Junction to Case
Thermal Resistance junction-to ambient
Rθja
62.5
Rev.1.1
—
Aug.24. 2020
2
NP3090G
Typical Performance Characteristics
100
90
81
72
63
54
45
36
27
18
9
90
10V
80
70
60
50
40
30
20
10
0
3.3V
4.5V
2.5V
3.5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
4.5
5.0
0
1
2
3
4
5
6
7
8
9
10
Vds Drain-Source Voltage(V)
Vgs Gate-Source Voltage(V)
Fig1 Output Characteristics
Fig2 Transfer Characteristics
15.0
13.5
12.0
10.5
9.0
3000
2700
2400
2100
1800
1500
1200
900
Ciss
7.5
V
GS
=4.5V
V
GS
=10V
6.0
4.5
Coss
Crss
3.0
600
1.5
300
0.0
0
0
2
4
6
8
10
12
14
16
18
20
0
1
2
3
4
5
6
7
8
9
10
I
D
-Drain Current(A)
Vds Drain-Source Voltage(V)
Fig3 Rdson-Drain current
Fig4 Capacitance vs Vds
40
36
32
28
24
20
16
12
8
10
9
8
7
6
5
4
3
2
1
0
4
0
0
1
2
3
4
5
6
7
8
9
10
0
5
10
15
20
25
30
35
40
45
50
Vgs Gate-Source Voltage(V)
Qg Gate Charge(nC)
Fig5 Rdson-Gate
Drain voltage
Fig6 Gate Charge
Rev.1.1
—
Aug.24. 2020
3
NP3090G
1
0
0
10
100
90
80
70
60
50
40
30
20
10
0
1
0.1
0
.
0
0
.
2
0.4
0.6
0
.
8
1
.
0
1.2
0
15
30
45
60
75
90
105
120
135
150
Vsd Sou
r
c
e
–
G
ate Voltage(V)
TJ-Junction Temperature
(
º
C
)
Fig7 Power De-rating
Fig8 Source-Drain Diode Forward
Rev.1.1
—
Aug.24. 2020
4
