NATLINEAR-NP3401VR-G
| Part # | NATLINEAR-NP3401VR-G |
Download  | NATLINEAR-NP3401VR-G |
NP3401
20V P-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP3401 uses advanced trench technology to
S
provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
G
D
General Features
V
DS
=-30V
，
I
D
=-4A
Marking and pin assignment
R
DS(ON)
(Typ.)=53
mΩ
@V
GS
=-4.5V
R
DS(ON)
(Typ.)=73
mΩ
@V
GS
=-2.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
SOT-23
(TOP VIEW)
D
Application
S
1
4
3
PWM applications
Load switch
S
Package
G
SOT-23
Ordering Information
Storage Temperature
Package
Devices Per Reel
3000
Part Number
NP3401VR
-55°C to +150°C
SOT-23
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
Drain-source voltage
Gate-source voltage
symbol
limit
-30
±12
-4
unit
V
V
DS
V
GS
I
D
V
Drain current-continuous
a
@Tj=125
℃
-pulse
d
b
A
I
DM
Is
-28
-1.25
1
A
Drain-source Diode forward current
Maximum power dissipation
A
P
D
Tj
W
℃
Operating junction
T
e
mperature range
-55
—
150
Rev.1.0
—
Oct. 26. 2017
1
NP3401
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
BV
DSS
I
DSS
V
GS
=0V, I
D
=-250µA
-30
–
–
–
–
V
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
–
–
-1
µA
nA
I
GSS
±100
ON Characteristics
Gate threshold voltage
V
GS(th)
R
DS(ON)
gfs
V
DS
=V
GS
, I
D
=-250µA
-0.5 -0.83 -1.3
V
mΩ
S
V
GS
=-4.5V, I
D
=-3A
V
GS
=-2.5V, I
D
=-2A
V
GS
=-5V, I
D
=-4A
–
–
–
53
73
5
65
85
–
Drain-source on-state resistance
Forward transconductance
Dynamic Characteristics
Input capacitance
C
ISS
–
–
–
880
105
65
–
–
–
V
DS
=-10V ,V
GS
=0V
f=1.0MHz
Output capacitance
C
OSS
C
RSS
pF
ns
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
Rise time
t
D(ON)
tr
t
D(OFF)
tf
–
–
–
–
–
–
–
7
–
–
–
–
–
–
–
V
DD
=-15V
I
D
=-4A
V
GEN
=-10V
R
L
=10ohm
R
GEN
=6ohm
3
Turn-off delay time
Fall time
30
12
8.5
1.8
2.7
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Qg
V
DS
=-15V,I
D
=-4A
V
GS
=-4.5V
Qgs
Qgd
nC
V
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
V
GS
=0V,Is=-4A
Diode forward voltage
–
-0.81 -1.2
Notes:
a.
surface mounted on FR4 board,t≤10sec
b.
pulse test:
pulse width≤300μs,duty≤2%
c.
guaranteed by design, not subject to production testing
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
100
℃
/W
Rev.1.0
—
Oct. 26. 2017
2
