NATLINEAR-NP3407VR-G
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NP3407VR
30V P-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP3407VR uses advanced trench technology
S
to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications.
G
D
General Features
V
DS
=-30V
，
I
D
=-4A
Marking and pin assignment
R
DS(ON)
(Typ.)=
45
m
Ω
@
V
GS
=-
10
V
R
DS(ON)
(Typ.)=
60
m
Ω
@
V
GS
=-
4.5
V
High power and current handing capability
Lead free product is acquired
Surface mount package
SOT-23
(TOP VIEW)
D
3
Application
PWM applications
Load switch
3 4 7 S
1
2
Package
G
S
SOT-23
Ordering Information
Storage Temperature
Package
Devices Per Reel
Part Number
-55°C to +150°C
SOT-23
3000
NP3407VR-G
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
symbol
limit
-30
unit
V
Drain-source voltage
Gate-source voltage
V
DS
V
GS
±20
V
T
C
=25°C
T
C
=70°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
A
=25°C
-4
-3.5
Continuous Drain Current (TJ = 150 °C)
I
D
-3.5
b,c
-2.7
b,c
-1.4
A
Continuous Source-Drain Diode Current
Pulsed Drain Current (t = 300 µs)
I
S
-1
b,c
I
DM
-12.8
Rev.1.0
—
Oct. 26. 2017
1
NP3407VR
T
C
=25°C
T
C
=70°C
T
A
=25°C
T
A
=70°C
1.7
1.1
W
Maximum power dissipation
P
D
1
b,c
0.6
b,c
Operating Junction and Storage
T
e
mperature Range
T
J
,T
STG
-55—150
℃
Thermal Characteristics
Maximum
130
Parameter
Maximum Junction-to-Ambient
b, d
Symbol
Typical
100
Unit
R
θJA
R
θJF
t
≤
5 s
℃
/W
75
Maximum Junction-to-Foot (Drain)
Steady State
60
Notes:
a. TC = 25 °C.
b. Surface mounted on 1″ x 1″ FR4 board.
c. t = 5 s.
d. Maximum under steady state conditions is 175 °C/W.
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
BV
DSS
I
DSS
V
GS
=0V,
I
D
=-250µA
-30
–
–
–
–
V
V
DS
=-30V, V
GS
=0V
V
DS
=0V, V
GS
=±20V
–
–
-1
µA
nA
I
GSS
±100
ON Characteristics
Gate threshold voltage
V
GS(th)
R
DS(ON)
gfs
V
DS
=V
GS
, I
D
=-250µA
-0.7
-1.3
45
-2.5
65
90
–
V
mΩ
S
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3A
V
DS
=-5V, I
D
=-4A
Drain-source on-state resistance
Forward transconductance
–
–
62
10
Dynamic Characteristics
Input capacitance
C
ISS
–
–
–
700
120
75
–
–
–
V
DS
=-10V ,V
GS
=0V
f=1.0MHz
Output capacitance
C
OSS
C
RSS
pF
Reverse transfer capacitance
Switching Characteristics
Turn-on delay time
Rise time
t
D(ON)
tr
t
D(OFF)
tf
–
–
–
–
–
–
–
9
5
–
–
–
–
–
–
–
V
DD
=-15V
I
D
=-4A
V
GEN
=-10V
R
L
=10ohm
R
GEN
=6ohm
ns
Turn-off delay time
Fall time
28
12.5
14
3.1
3
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Qg
V
DS
=-15V,I
D
=-4A
V
GS
=-4.5V
Qgs
Qgd
nC
Rev.1.0
—
Oct. 26. 2017
2
NP3407VR
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode forward voltage
V
SD
V
GS
=0V,Is=-4.2A
–
-0.81 -1.2
V
Typical Performance Characteristics
25
20
VGS=-2.0V
VDS=-5V
VGS=-2.5V
VGS=-4.5V
VGS=-10V
20
15
10
5
15
10
5
0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
1
2
3
4
5
-V
GS
(Volts)
-V
D
S
(Volts)
Fig 1
：
On-Region Characteristics
Fig 2
：
Transfer Characteristics
200
100
80
60
40
20
180
160
140
120
100
80
VGS=-4.5V
VGS=-10V
VGS=-2.5V,ID=-2A
VGS=-4.5V,ID=-3.7A
VGS=-10V,ID=-4A
60
40
20
0
0
2
4
6
8
10
0
20
40
60
80
100
120
-I
D
(A)
Temperature
Fig 4
：
On-Resistance vs. Junction
Fig 3
：
On-Resistance vs. Drain Current
Temperature
and Gate Voltage
150
25
20
15
10
5
ID=-4A
120
90
60
30
0
0.0
0
2
4
6
8
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V
G
S
(V)
-V
SD
(V)
Fig 5
：
On-Resistance vs. Gate-Source
Fig 6
：
Body-Diode Characteristics
Voltage
Rev.1.0
—
Oct. 26. 2017
3
