NATLINEAR-NP3415EMR-G

NP3415EMR  

20V P-Channel Enhancement Mode MOSFET  

Description  

Schematic diagram  

The NP3415EMR uses advanced trench technology  

to provide excellent R

DS(ON)

, low gate charge and  

operation with gate voltages as low as 1.8V. This device  

is suitable for use as a load switch or in PWM  

applications.  

General Features  



V

DS

=-20V

，

I

D

=-4A  

R

DS(ON)

(Typ.)=34

mΩ

@V

GS

=-4.5V  

R

DS(ON)

(Typ.)=44

mΩ

@V

GS

=-2.5V  



High power and current handing capability  



Lead free product is acquired  



Surface mount package  

Marking and pin assignment  

SOT-23-3L  

(TOP VIEW)  

D

3



ESD Rating: 2500V HBM  

Application  

3415E  



PWM applications  



Load switch  

1

2

Package  

HF

Pb  

S

G



SOT-23-3L  

Ordering Information  

Storage Temperature  

Package  

SOT-23-3L  

Devices Per Reel  

Part Number  

-55°C to +150°C  

3000  

NP3415EMR-G  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

parameter  

symbol  

limit  

-20  

unit  

V

Drain-source voltage  

Gate-source voltage  

V

DS  

V

GS  

±8  

V

T

A

=25

℃  

T

A

=70

℃  

-4  

Continuous Drain Current  

Pulsed Drain Current

C  

I

D  

I

DM  

P

D  

Tj  

A

A

-3  

-20  

T

A

=25

℃  

T

A

=70

℃  

1.4  

Maximum power dissipation

B  

0.9  

W

Operating junction

T

e

mperature range  

-55

—

150  

℃

Rev.1.1

—

Oct. 26. 2017  

1

NP3415EMR  

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min  

Typ  

Max Unit  

OFF Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage  

BV

DSS  

I

DSS  

V

GS

=0

V

,

I

D

=-250µA  

-20  

–

–

–

–

V

V

DS

=-20V, V

GS

=0V  

V

DS

=0

V

,

V

GS

=±8V  

–

–

-1  

µA  

µA  

I

GSS  

±1 0  

ON Characteristics  

Gate threshold voltage  

V

GS(th)  

R

DS(ON)  

gfs  

V

DS

=V

GS

, I

D

=-250µA  

-0.4 -0.59 -0.9  

V

mΩ  

S

V

GS

=-4.5V, I

D

=-4A  

V

GS

=-2.5V, I

D

=-3A  

V

GS

=-5

V

,

I

D

=-4A  

–

–

34  

44  

–

45  

55  

–

Drain-source on-state resistance  

Forward transconductance  

8

Dynamic Characteristics  

Input capacitance  

C

ISS  

–

–

–

751  

115  

80  

–

–

–

V

DS

=-10V ,V

GS

=0V  

f=1.0MHz  

Output capacitance  

C

OSS  

C

RSS  

pF  

ns  

Reverse transfer capacitance  

Switching Characteristics  

Turn-on delay time  

Rise time  

t

D(ON)  

tr  

t

D(OFF)  

tf  

–

–

–

–

–

–

–

13  

9

–

–

–

–

–

–

–

V

DD

=-10V  

I

D

=-2.8A  

V

GEN

=-4.5V  

R

L

=10ohm  

R

GEN

=60ohm  

Turn-off delay time  

Fall time  

19  

29  

9.3  

1

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

Qg  

V

DS

=-10V,I

D

=-3A  

V

GS

=-4.5V  

Qgs  

Qgd  

nC  

V

2.2  

DRAIN-SOURCE DIODE CHARACTERISTICS  

Diode forward voltage  

V

SD  

V

GS

=0

V

,

Is=-1.25A  

–

-0.81 -1.2  

Thermal Characteristics  

Max  

90  

Parameter  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A D  

Maximum Junction-to-Lead

B  

Symbol  

Typ  

70  

Unit  

≤ 10s  

R

θJA  

Steady-State  

Steady-State  

125  

80  

100  

63  

℃

/W  

R

θJ

L  

A. The value of R

θJA

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with  

T

A

=25°C. The value in any given application depends on the user’s specific board design.  

B. The power dissipation P

D

is based on T

J(MAX)

=150°C, using

≤

10s junction-to-ambient thermal resistance.  

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150°C. Ratings are based on low frequency and duty  

cycles to keep initialTJ=25°C.  

D. The R

θJA

is the sum of the thermal impedence from junction to lead R

θJL

and lead to ambient.  

Rev.1.1

—

Oct. 26. 2017  

2

NP3415EMR  

Typical Performance Characteristics  

25.0  

20  

18  

16  

14  

12  

10  

8

22.5  

20.0  

17.5  

15.0  

12.5  

10.0  

7.5  

V

=

–

4.5V  

GS  

V

=-3.3V  

GS  

V

=

–

2V  

GS  

6

4

5.0  

V

=-1.5V  

GS  

2

2.5  

0

0.0  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

4.5  

5.0  

150  

10  

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

4.5  

-Vgs Gate-Source Voltage(V)  

Fig2 Transfer Characteristics  

-Vds Drain-Source Voltage(V)  

Fig1 Output Characteristics  

100  

80  

60  

40  

20  

0

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0.0  

V

GS

=-2.5V  

V

GS

=-4.5V  

0.0  

0.4  

0.8  

1.2  

1.6  

2.0  

2.4  

2.8  

3.2  

3.6  

4.0  

0

15  

30  

45  

60  

75  

90  

105  

120  

135  

-I

D

-Drain Current(A)  

Fig3 Rdson-Drain current  

TJ-Junction Temperature

(

º

C

)  

Fig4 Power De-rating  

100  

10  

1

500  

450  

400  

350  

300  

250  

200  

150  

100  

50  

0.1  

0

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

0

1

2

3

4

5

6

7

8

9

-Vsd Source -Gate Voltage(V)  

-Vgs Gate-Source Voltage(V)  

Fig5 Source-Drain Diode Forward  

Fig6 Rdson-Gate

 

Drain voltage  

Rev.1.1

—

Oct. 26. 2017  

3

NP3415EMR  

Rev.1.1

—

Oct. 26. 2017  

4

NP3415EMR  

Package Information  



SOT-23-3L  

θ

D

b

0.2  

e

c

e1  

Dimensions In Millimeters  

Dimensions In Inches  

Symbol  

Min  

Max  

Min  

Max  

A

A1  

A2  

b

1.050  

0.000  

1.050  

0.300  

0.100  

2.820  

1.500  

2.650  

1.250  

0.100  

1.150  

0.500  

0.200  

3.020  

1.700  

2.950  

0.041  

0.000  

0.041  

0.012  

0.004  

0.111  

0.059  

0.104  

0.049  

0.004  

0.045  

0.020  

0.008  

0.119  

0.067  

0.116  

c

D

E

E1  

e

0.950(BSC)  

0.037(BSC)  

e1  

L

1.800  

0.300  

0

°

 

2.000  

0.600  

8

°  

0.071  

0.012  

0

°  

0.079  

0.024  

8

°  

θ

Rev.1.1

—

Oct. 26. 2017  

5