NATLINEAR-NP35N04QR
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NP35N04QR
N-Channel Trench Enhancement Mode MOSFET
Description
Schematic diagram
The NP35N04QR uses Trench technology that is
D
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an
extremely low combination of R
DS(ON)
and Qg. This device
is ideal for high-frequency switching and synchronous
rectification.
G
S
General Features
Marking and pin assignment
V
DS
=40V
，
ID =35A
DFN3
×
3-8L
R
DS(ON)
=7.9
mΩ (typical)
R
DS(ON)
=10.2
mΩ (typical)
@ VGS=10V
@ VGS=4.5V
Excellent gate charge x R
DS(ON)
product(FOM)
Very low on-resistance R
DS(ON)
150 °C operating temperature
Pb-free lead plating
NP35N04
XXXXX
YYYYY
100% UIS tested
Application
Top View
Bottom View
DC/DC Converter
Ideal for high-frequency switching and
synchronous rectification
Package
HF
Pb
DFN3*3-8L
XXXX
—
Wafer Information
YYYY
—
Quality Code
Ordering Information
Storage Temperature
Package
Devices Per Reel
Part Number
-55°C to +150°C
DFN3×3-8L
4000
NP35N04QR_G
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
symbol
limit
40
unit
V
Drain-source voltage
Gate-source voltage
V
DS
V
GS
I
D
±20
35
V
Drain Current-Continuous (Silicon Limited)
A
Rev.1.1
—
Nov. 8. 2017
1
NP35N04QR
Drain Current-Continuous(T
C
=100
℃
)
Pulsed Drain Current (Package Limited)
Single pulse avalanche energy
I
D
（
100
℃）
15
100
A
A
I
DM
E
AS
P
D
Tj
150
mJ
W
℃
Maximum power dissipation
35
Operating junction
T
e
mperature range
-55
—
150
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
BV
DSS
I
DSS
V
GS
=0
V
,
I
D
=250µA
40
–
–
–
–
–
1
V
V
DS
=40V, V
GS
=0V
V
DS
=0
V
,
V
GS
=±20V
µA
µA
I
GSS
–
±10
ON Characteristics
Gate threshold voltage
V
GS(th)
R
DS(ON)
gfs
V
DS
=V
GS
, I
D
=250µA
1.0
–
1.84
7.9
2.8
9.5
12
–
V
mΩ
S
V
GS
=10V, I
D
=20A
V
GS
=4.5V, I
D
=20A
V
DS
=5V, I
D
=20A
Drain-source on-state resistance
Forward transconductance
–
10.2
30
26
Dynamic Characteristics
Input capacitance
C
ISS
–
–
–
1577
128
112
–
–
–
V
DS
=20V ,V
GS
=0V
f=1.0MHz
Output capacitance
C
OSS
pF
Reverse transfer capacitance
C
RSS
Switching Characteristics
Turn-on delay time
Rise time
t
D(ON)
tr
t
D(OFF)
tf
–
–
–
–
–
–
–
14
18
–
–
–
–
–
–
–
V
DS
=20V
I
D
=2.8A
V
GEN
=4.5V
R
L
=10ohm
R
GEN
=60ohm
ns
Turn-off delay time
Fall time
50
21
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Qg
32.4
4.4
6
V
DS
=20
V
,
I
D
=20A
V
GS
=4.5V
Qgs
Qgd
nC
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
100
℃
/W
Rev.1.1
—
Nov. 8. 2017
2
NP35N04QR
Typical Performance Characteristics
90
90
81
72
63
54
45
36
27
18
9
81
72
63
54
45
36
27
18
9
10V
4.5V
3.3V
2.5V
3.5
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
4.0
4.5
5.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vds Drain-Source Voltage(V)
Vgs Gate-Source Voltage(V)
Fig2 Transfer Characteristics
Fig1 Output Characteristics
30
3000
2700
2400
2100
1800
1500
1200
900
27
24
21
18
15
12
9
Ciss
V
GS
=4.5V
V
GS
=10V
Coss
Crss
600
6
300
3
0
0
0.0
1.5
3.0
4.5
6.0
7.5
9.0 10.5
12.0 13.5 15.0
0
2
4
6
8
10
12
14
16
18
20
Vds Drain-Source Voltage(V)
Fig4 Capacitance vs Vds
I
–
Drain Current(A)
Fig3
D
Rdson-Drain current
90
81
72
63
54
45
36
27
18
9
10
9
8
7
6
5
4
3
2
1
0
0
0
1
2
3
4
5
6
7
8
9
10
0.0
3.5
7.0 10.5
14.0 17.5 21.0 24.5 28.0 31.5 35.0
Vgs Gate-Source Voltage(V)
Fig5 Rdson-Gate
Drain voltage
Qg Gate Charge(nC)
Fig6 Gate Charge
Rev.1.1
—
Nov. 8. 2017
3
NP35N04QR
1
0
0
50
45
40
35
30
25
20
15
10
5
10
1
0
0.1
0
.
0
0
.
2
0.4
0.6
0
.
8
1
.
0
1.2
0
15
30
45
60
75
90
105 120 135 150
Vsd Source -Gate Voltage(V)
TJ-Junction Temperature
(
º
C
)
Fig7 Power De-rating
Fig8 Source-Drain Diode Forward
Rev.1.1
—
Nov. 8. 2017
4
