NATLINEAR-NP4419SR-G
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NP4419SR
30V P-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP4419SR uses advanced trench
D
technology and design to provide excellent R
DS(ON)
with low gate charge. It can be used in load switch
and battery protection applications.
G
General Features
S
V
DS
=-30V
，
I
D
=-9.0A
R
DS(ON)
(Typ.)=16
mΩ
R
DS(ON)
(Typ.)=21
mΩ
@V
GS
=-10V
@V
GS
=-4.5V
Marking and pin assignment
High power and current handing capability
Lead free product is acquired
Surface mount package
SOP-8
Top View
Bottom View
D
D
D
9
1
Application
4
4
D
X
P
X
N
X
Y
X
Y
Y
Y
Battery protection
Load switch
G
S
S
S
Package
100% UIS TESTED!
Note
：
XXXX is the date code
SOP-8
HF
Pb
100%
∆
Vds TESTED!
YYYY is the Quality Code.
Ordering Information
Storage Temperature
Package
Devices Per Reel
Part Number
-55°C to +150°C
SOP8
4000
NP4419SR-G
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
Drain-source voltage
Gate-source voltage
symbol
limit
-30
unit
V
V
DS
V
GS
I
D
±20
V
Drain current-continuous
a
@Tj=125
℃
-pulse
d
b
-9.0
A
I
DM
Is
-40
A
Drain-source Diode forward current
Maximum power dissipation
-2.5
A
P
D
Tj
1.5
W
℃
Operating junction
T
e
mperature range
-55
—
150
Rev.1.0
—
Jan.8.2018
1
NP4419SR
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
BV
DSS
I
DSS
V
GS
=0
V
,
I
D
=-250µA
-30
–
–
–
–
V
V
DS
=-30V, V
GS
=0V
V
DS
=0
V
,
V
GS
=±20V
–
–
-1
µA
nA
I
GSS
±100
ON Characteristics
Gate threshold voltage
V
GS(th)
R
DS(ON)
gfs
V
DS
=V
GS
, I
D
=-250µA
-1.00 -1.67
-3.0
V
mΩ
S
V
GS
=10V, I
D
=-9A
V
GS
=4.5V, I
D
=-7A
V
GS
=-5
V
,
I
D
=-9A
–
16
21
24
22
28
–
Drain-source on-state resistance
Forward transconductance
–
Dynamic Characteristics
Input capacitance
C
ISS
–
–
–
1040 1250
V
DS
=-15V ,V
GS
=0V
f=1.0MHz
Output capacitance
C
OSS
C
RSS
180
125
–
pF
ns
Reverse transfer capacitance
175
Switching Characteristics
Turn-on delay time
Rise time
t
D(ON)
–
–
–
–
–
10
5.5
26
9
–
–
–
–
–
V
DS
=-15V
R
L
=2.2
V
GS
=-10V
tr
Turn-off delay time
Fall time
t
D(OFF)
tf
R
GEN
=3
T
o
tal gate charge
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Qg(10V)
Qg(4.5V)
Qgs
19
9.6
3.6
4.6
V
DS
=-15V,I
D
=-9A
V
GS
=-10V
nC
V
–
–
–
–
Qgd
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
V
GS
=0
V
,
Is=-1.0A
Diode forward voltage
–
-0.75 -1.0
Notes:
a. The value of Rth JA is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with TA =25°C.
The value in any given application depends on the user’s specific board design.
b. The power dissipation P
D
is based on T
J(MAX)
=150
℃
, using ≤ 10s junction
-to-ambient thermal resistance.
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
90
℃
/W
Rev.1.0
—
Jan.8.2018
2
NP4419SR
Recommended Minimum Pads
SOP-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Rev.1.0
—
Jan.8.2018
7
NP4419SR
Tape and Reel
SOP-8
T
a
pe Size
Reel Size
12mm
Ф
330
M
N
W
W1
H
K
S
G
R
V
Ф
330.00
Ф
97.00
±0.50 ±0.30
13.00
±0.30
17.40
±1.00
Ф
13.00
±0.5
10.6
2.00
±0.50
—
—
—
Unit Per Reel:
4000pcs
Trailer Tape
250mm Min. or
65 Empty Pockets
Leader Tape
250mm Min. Or
65 Empty Pockets
Components Tape
Orientation In Pocket
Rev.1.0
—
Jan.8.2018
8
