NATLINEAR-NP6020D6

NP6020D6  

0V N-Channel Enhancement Mode MOSFET  

Description  

Schematic diagram  

The NP6020D6 uses advanced trench technology  

that is uniquely optimized to provide the most efficient  

high frequency switching performance. Both  

conduction and switching power losses are minimized  

due to an extremely low combination of R

DS(ON)

and  

Q

g

. This device is ideal for high-frequency switching  

and synchronous rectification.  

D

G

S

General Features  

Marking and pin assignment  



V

DS

=60V I

D

=20A  

R

DS(ON)

(Typ.)=18.5m

Ω @V

GS

=10V  

R

DS(ON)

(Typ.)=21.5m

Ω @V

GS

=4.5V  



Excellent gate charge x R

DS(on)

product(FOM)  



Very low on-resistance R

DS(on)  



150 °C operating temperature  



100% UIS tested  

100% UIS TESTED!  

100%

∆Vds TESTED!  

Application  



Synchronus Rectification in DC/DC and AC/DC  

Converters  

XXXXX—Wafer Information  

YYYYY—Quality Code  



Industrial and Motor Drive applications  

Ordering Information  

Storage Temperature  

Package  

Devices Per Reel  

5000  

Part Number  

-55°C to +150°C  

PDFN5*6-8L-A  

NP6020D6-G  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

parameter  

symbol  

limit  

60  

unit  

V

Drain-source voltage  

Gate-source voltage  

V

DS  

V

GS  

±20  

20  

V

TC=25°C  

TC=70°C  

Continuous Drain Current  

I

D  

A

16  

Pulsed Drain Current  

I

DP  

80  

A

Avalanche energy

(T

j

=25

℃

,V

D

D

=30

V

,

V

G

=10

V

,

L=0.5mH,Rg=25

Ω

)  

E

AS  

40  

mJ  

TC=25°C  

37.5  

15  

Power Dissipation  

TC=70°C  

P

D  

Tj  

W

Operating junction

T

e

mperature range  

-55—150  

℃

Rev.1.0

—

Jan. 20. 2019  

1

NP6020D6  

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min Typ Max

 

Unit  

Static Characteristics  

Drain-source breakdown voltage  

BV

DSS

V

GS

=0V,

I

D

=250µA  

60  

–

–

–

V

V

–

1

5

Zero gate voltage drain current  

I

DSS  

µA  

T

J

=85°C  

–

–

–

Gate Leakage Current  

Gate threshold voltage  

I

GSS  

V

GS(th)

V

DS

=V

GS

, I

D

=250µA  

V

DS

=0V, V

GS

=±20V  

–

±100 nA  

1.0  

–

2.0  

18.5  

21.5  

55  

3.0  

22  

25  

–

V

mΩ  

S

V

Drain-source on-state resistance  

R

DS(ON)  

V

GS

=4.5V, I

D

=15A  

V

DS

=5V,I

D

=20A  

Forward Transconductance  

Diode Characteristics  

Diode Forward Voltage  

g

FS  

–

V

SD  

I

S  

I

SD

=1A,V

GS

=0V  

–

–

0.7  

–

1.2  

20  

V

A

Diode Continuous Forward  

Current  

Reverse Recovery Time  

Reverse Recovery Charge  

Dynamic Characteristics  

Gate Resistance  

t

rr  

–

–

22  

76  

–

–

ns  

T

J

= 25°C, I

F

= I

S

di/dt = 100A/μs  

Q

rr  

nC  

R

G  

C

ISS  

C

OSS  

C

RSS  

t

D(ON)  

tr  

V

V

–

–

–

–

–

–

–

–

–

–

3

3.6  

1582  

100  

67  

5.4  

Ω

Input capacitance  

–

–

–

–

–

–

–

–

–

–

Output capacitance  

Reverse transfer capacitance  

Turn-on delay time  

Turn-on Rise time  

pF  

f=1.0MHz  

7.5  

6.5  

33  

V

GS

=10V, V

DS

=30V, R

L

=1.5

Ω,  

R

G

=3

Ω  

ns  

Turn-off delay time  

t

D(OFF)  

t

f  

Turn-off Fall time  

7.5  

28  

T

o

tal gate charge  

Q

g  

Gate-source charge  

Gate-drain charge  

Q

gs  

Q

gd  

V

GS

=10V, V

DS

=30V

，

I

D

=30A  

4.5  

7

nC  

Thermal Characteristics  

Max  

Parameter  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Lead

B  

Symbol  

Typ  

Unit  

≤ 10s  

Steady-State  

Steady-State  

20  

50  

12  

33  

R

θJA  

℃

/W  

2.9  

R

θJ

C  

2.4  

A:The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment  

with T A=25°C. The value in any given application depends on the user’s specific board design. The current rating is based on  

the t

≤

10s thermal resistance rating.  

B: The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient.  

Rev.1.0

—

Jan. 20. 2019  

2

NP6020D6  

Package Information  



PDFN5*6-8L-A  

Top View  

Bottom View  

Side View  

b

Φ

D1  

A3  

A

e

D2  

D

DIMENSIONS IN MILLIMETERS  

DIMENSIONS IN INCHES  

SYMBOLS  

MIN  

NOM  

0.900  

MAX  

0.930  

MIN  

NOM  

0.035  

MAX  

0.036  

A

A3  

D

0.870  

0.034  

0.152REF.  

5.020  

0.006REF.  

0.198  

4.944  

5.974  

3.910  

3.375  

4.870  

5.720  

1.190  

0.350  

5.096  

6.126  

4.110  

3.575  

4.930  

5.780  

1.390  

0.410  

0.195  

0.235  

0.154  

0.133  

0.192  

0.226  

0.047  

0.014  

0.201  

0.241  

0.162  

0.141  

0.194  

0.228  

0.055  

0.016  

E

6.050  

0.238  

D1  

E1  

D2  

E2  

k

4.010  

0.158  

3.475  

0.137  

4.900  

0.193  

5.750  

0.227  

1.290  

0.051  

b

0.380  

0.015  

e

1.270TY

P

.  

0.635  

0.050TY

P

.  

0.025  

L

0.559  

0.424  

0.574  

10

°

 

1.150  

0.711  

0.576  

0.726  

12

°  

1.250  

0.022  

0.017  

0.023  

10

°  

0.045  

0.028  

0.023  

0.029  

12

°  

0.049  

L1  

H

0.500  

0.020  

0.650  

0.026  

θ

11

°  

11

°  

Ф

1.200  

0.047  

Rev.1.0

—

Jan. 20. 2019  

3