NATLINEAR-NP6884D6

NP6884D6  

40V Dual N-Channel Enhancement Mode MOSFET  

Description  

Schematic diagram  

The NP6884D6 uses advanced trench technology  

D1  

D2  

S2  

to provide excellent R

DS(ON)

with low gate charge.  

This device is suitable for high side switch in SMPS  

and general purpose applications.  

G2  

G1  

General Features  

S1  



V

DS

=40V

，

I

D

=26A  

R

DS(ON)

=13.7 m

Ω (typical) @ V

GS

=10V  

R

DS(ON)

=17.8 m

Ω (typical) @ V

GS

=4.5V  



Excellent gate charge x R

DS(ON)

product(FOM)  



Very low on-resistance R

DS(ON)  



150 °C operating temperature  



Pb-free lead plating  

Marking and pin assignment  

PDFN5×6-8L-B  

D1 D1

 

D2 D2  

D2 D2 D1

 

D1  



100% UIS tested  

NP6884  

XXXXX  

YYYYY  

Application  



DC/DC Converter  

S1 G1 S2 G2  

G2 S2 G1

 

S1  



Ideal for high-frequency switching and  

synchronous rectification  

Top View  

Bottom View  

Package  

XXXX—Wafer Information  

YYYY—Quality Code  



PDFN5*6-8L-B  

Ordering Information  

Storage Temperature  

Package  

Devices Per Reel  

Part Number  

-55°C to +150°C  

5000  

NP6884D6-G  

PDFN5*6-8L-B  

Absolute Maximum Ratings

(TA=25

℃

unless otherwise noted)  

parameter  

symbol  

limit  

40  

unit  

V

Drain-source voltage  

Gate-source voltage  

V

DS  

V

GS  

±20  

26  

V

T

A

=25°C  

T

A

=75°C  

Drain Current-Continuous (Silicon Limited)  

I

D  

A

18  

Pulsed Drain Current (Package Limited)  

Single pulse avalanche energy  

I

DM  

104  

50  

A

E

AS  

mJ  

T

A

=25°C  

T

A

=75°C  

31  

Maximum power dissipation  

P

D  

W

16  

Rev.1.1

—

Nov. 8. 2017  

1

NP6884D6  

Operating junction

T

e

mperature range  

Tj  

-55—150  

℃

Electrical Characteristics

(TA=25

℃

unless otherwise noted)  

Parameter  

Symbol  

Condition  

Min  

Typ  

Max Unit  

OFF Characteristics  

Drain-source breakdown voltage  

Zero gate voltage drain current  

Gate-body leakage  

BV

DSS  

I

DSS  

V

GS

=0V,

I

D

=250µA  

40  

–

–

–

–

V

V

DS

=40V, V

G

S

=0V  

V

DS

=0V, V

GS

=±20V  

1

µA  

nA  

I

GSS  

–

–

±100  

ON Characteristics  

Gate threshold voltage  

V

GS(th)  

R

DS(ON)  

g

fs  

V

DS

=V

GS

, I

D

=250µA  

1.0  

1.4  

13.7  

17.8  

50  

2.0  

15  

19  

–

V

mΩ  

S

V

GS

=10V, I

D

=26A  

V

GS

=4.5V, I

D

=15A  

V

DS

=5V, I

D

=10A  

–

–

–

Drain-source on-state resistance  

Forward transconductance  

Dynamic Characteristics  

Input capacitance  

C

ISS  

–

–

–

1226  

103  

87  

–

–

–

V

DS

=20V ,V

GS

=0V  

f=1.0MHz  

Output capacitance  

C

OSS  

C

RSS  

pF  

Reverse transfer capacitance  

V

GS

=0V, V

DS

=0V,  

f=1.0MHz  

Gate resistance  

Rg  

–

3.5  

5

Ω

Switching Characteristics  

Turn-on delay time  

Rise time  

t

D(ON)  

–

–

–

–

–

–

–

6.4  

17.2  

29  

–

–

–

–

–

–

–

V

DS

=20V  

tr  

t

D(OFF)  

tf  

V

GS

=10V  

R

L

=1.5

Ω  

R

GEN

=3

Ω  

ns  

Turn-off delay time  

Fall time  

16  

T

o

tal gate charge  

Gate-source charge  

Gate-drain charge  

Q

g  

24.8  

4.3  

4.8  

V

DS

=20V,I

D

=10A  

V

GS

=10V  

Q

gs  

Q

gd  

nC  

Thermal Characteristics  

Max  

Parameter  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Ambient

A  

Maximum Junction-to-Lead

B  

Symbol  

Typ  

12  

Unit  

≤ 10s  

20  

50  

R

θJA  

Steady-State  

Steady-State  

33  

℃

/W  

2.9  

R

θJ

C  

2.4  

A:The value of R

θJA

is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment  

with T A=25°C. The value in any given application depends on the user’s specific board design. The current rating is based on  

the t

≤

10s thermal resistance rating.  

B: The R

θJA

is the sum of the thermal impedence from junction to lead R  

and lead to ambient.  

θJ

C  

Rev.1.1

—

Nov. 8. 2017  

2

NP6884D6  

Typical Performance Characteristics  

50  

50  

45  

40  

35  

30  

25  

20  

15  

10  

5

45  

40  

10V  

35  

30  

4.5V  

25  

20  

15  

10  

5

3.3V  

2.5V  

0

0

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

4.5  

5.0  

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50  

Vgs Gate-Source Voltage(V)  

Vds Drain-Source Voltage(V)  

Fig1 Output Characteristics  

Fig2 Transfer Characteristics  

50  

2000  

1800  

1600  

1400  

1200  

1000  

800  

45  

40  

35  

30  

25  

20  

15  

10  

5

Ciss  

V

GS

=4.5V  

600  

V

400  

Coss  

Crss  

200  

0

0

0

2

4

6

8

10  

12  

14  

16  

18  

20  

0

2

4

6

8

10  

12  

14  

16  

18  

20  

I

D

-Drain Current(A)  

Fig3 Rdson-Drain current  

Vds Drain-Source Voltage(V)  

Fig4 Capacitance vs Vds  

5.0  

4.5  

4.0  

3.5  

3.0  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

150  

135  

120  

105  

90  

75  

60  

45  

30  

15  

0

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

3.5  

4.0  

4.5  

5.0  

0

1

2

3

4

5

6

7

8

9

10  

Qg Gate Charge(nC)  

Vgs Gate-Source Voltage(V)  

Fig5 Rdson-Gate

 

Drain voltage  

Fig6 Gate Charge  

Rev.1.1

—

Nov. 8. 2017  

3

NP6884D6  

1

0

0  

10  

50  

45  

40  

35  

30  

25  

20  

15  

10  

5

1

0.1  

0

0

.

0  

0

.

2  

0.4  

0.6  

0

.

8  

1

.

0  

1.2  

0

15  

30  

45  

60  

75  

90  

105  

120  

135  

150  

Vsd Sou

r

c

e -Gate Voltage(V)  

TJ-Junction Temperature

(  

º

C

)  

Fig7 Power De-rating  

Fig8 Source-Drain Diode Forward  

Rev.1.1

—

Nov. 8. 2017  

4

NP6884D6  

Package Information  



PDFN5*6-8L-B  

Rev.1.1

—

Nov. 8. 2017  

5