NATLINEAR-NP9926ASR-G
| Part # | NATLINEAR-NP9926ASR-G |
Download  | NATLINEAR-NP9926ASR-G |
NP9926A
20V Dual N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP9926A uses advanced trench technology
D1
D2
and design to provide excellent R
DS(ON)
with low gate
charge. It can be used in a wide variety of applications.
G2
G1
General Features
V
DS
=20V
，
I
D
=6.5A
S1
S2
R
DS(ON)
(Typ.)=19
mΩ
@V
GS
=2.5V
R
DS(ON)
(Typ.)=14
mΩ
@V
GS
=4.5V
Marking and pin assignment
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
SOP-8
(TOP VIEW)
Application
Power switching application
1
2
3
4
8
7
6
5
S2
G2
S1
G1
D2
D2
D1
D1
Hard switched and high frequency circuits
Uninterruptible power supply
Package
SOP-8
Note
：
XXXX is the date code , YYYY is the wafer lot
number.
Ordering Information
Storage Temperature
Package
Devices Per Reel
Part Number
NP9926ASR
-55°C to +150°C
SOP-8
3000
Absolute Maximum Ratings
(TA=25
℃
unless otherwise noted)
parameter
symbol
limit
20
unit
V
Drain-source voltage
Gate-source voltage
V
DS
V
GS
±12
6.5
V
T
A
=25°C
T
A
=75°C
Drain Current-Continuous (Silicon Limited)
Pulsed Drain Current (Package Limited)
Maximum power dissipation
I
D
I
DM
P
D
Tj
A
A
4
26
T
A
=25°C
T
A
=75°C
1.25
0.8
W
℃
Operating junction
T
e
mperature range
-55
—
150
Rev.1.0
—
Nov. 8. 2017
1
NP9926A
Electrical Characteristics
(TA=25
℃
unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max Unit
OFF Characteristics
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
BV
DSS
I
DSS
V
GS
=0V, I
D
=250µA
20
–
–
–
–
–
1
V
V
DS
=20V, V
GS
=0V
V
DS
=0V, V
GS
=±12V
µA
nA
I
GSS
–
±100
ON Characteristics
Gate threshold voltage
V
GS(th)
R
DS(ON)
gfs
V
DS
=V
GS
, I
D
=250µA
-0.5
0.7
14
19
10
1.2
22
27
–
V
mΩ
S
V
GS
=4.5V, I
D
=6.5A
V
GS
=2.5V, I
D
=5.5A
V
GS
=5V, I
D
=6A
–
–
–
Drain-source on-state resistance
Forward transconductance
Dynamic Characteristics
Input capacitance
C
ISS
–
–
–
900
220
100
–
–
–
V
DS
=10V ,V
GS
=0V
f=1.0MHz
Output capacitance
C
OSS
pF
Reverse transfer capacitance
C
RSS
Switching Characteristics
Turn-on delay time
Rise time
t
D(ON)
–
–
–
–
–
–
–
10
11
35
30
12
2.3
1
–
–
–
–
–
–
–
V
DD
=10V
I
D
=6A
V
GEN
=4.5V
R
GEN
=6ohm
tr
t
D(OFF)
tf
ns
Turn-off delay time
Fall time
T
o
tal gate charge
Gate-source charge
Gate-drain charge
Qg
V
DS
=10V,I
D
=6A
V
GS
=4.5V
Qgs
Qgd
nC
Thermal Characteristics
Thermal Resistance junction-to ambient
Rth JA
100
℃
/W
Rev.1.0
—
Nov. 8. 2017
2
NP9926A
Test Circuit
：
（
1
）
、
EAS Test Circuit
（
2
）
、
Gate Charge Test Circuit
（
3
）
、
Switch Time Test Circuit
Rev.1.0
—
Nov. 8. 2017
6
