Nexperia-2N7002PV-115
| Part # | Nexperia-2N7002PV-115 |
Download  | Nexperia-2N7002PV-115 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
2N7002PV
60
V
,
3
50 mA N-channel Trench MOSFET
Rev. 1 — 5 August 2010
Product data sheet
1. Product
profile
1.1 General
description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat
lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features
and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
AEC-Q101 qualified
1.3 Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick
reference data
Table 1.
Quick reference data
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
V
DS
V
GS
I
D
drain-source voltage
T
amb
= 25
°
C
T
amb
= 25
°
C
–
–
–
–
–
–
60
V
gate-source voltage
drain current
±
20
350
V
[1]
T
amb
= 25
°
C;
mA
V
GS
= 10 V
R
DSon
drain-source on-state
resistance
T
j
= 25
°
C;
–
1
1.6
Ω
V
GS
= 10 V;
I
D
= 500 mA
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad
for drain 1 cm
2
.
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
2. Pinning
information
Table 2.
Pinning
Pin
1
Symbol
S1
Description
source1
gate1
Simplified outline
Graphic symbol
D
1
D
6
5
4
2
2
G1
3
D2
drain2
4
S2
source2
gate2
5
G2
1
2
3
6
D1
drain1
S
G
S
G
2
1
1
2
msd901
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2N7002PV
–
plastic surface-mounted package; 6 leads
SOT666
4. Marking
Table 4.
Marking codes
Type number
Marking code
2N7002PV
ZF
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Per transistor
Conditions
Min
Max
Unit
V
DS
V
GS
I
D
drain-source voltage
T
amb
= 25
°
C
T
amb
= 25
°
C
V
GS
= 10 V
–
–
60
V
V
gate-source voltage
drain current
±
20
[1]
T
amb
= 25
°
C
T
amb
= 100
°
C
–
–
–
350
250
1.2
mA
mA
A
I
DM
peak drain current
T
amb
= 25
°
C;
single pulse; t
p
≤
10
μ
s
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
2 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
330
Unit
mW
mW
mW
[2]
[1]
P
tot
total power dissipation
T
amb
= 25
°
C
–
–
–
390
T
sp
= 25
°
C
T
amb
= 25
°
C
T
amb
= 25
°
C
1090
Source-drain diode
[1]
[2]
I
S
source current
–
–
350
mA
Per device
P
tot
T
j
total power dissipation
junction temperature
ambient temperature
storage temperature
500
mW
°
C
150
T
amb
T
stg
−
55
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
017aaa001
017aaa002
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−
75
0
−
75
−
25
25
75
125
175
(
°
C)
−
25
25
75
125
T
amb
175
(
°
C)
T
amb
P
tot
———————–
I
D
——————-
P
der
=
×
100
%
I
der
=
×
100
%
P
tot
(
25
°
C
)
I
D
(
25
°
C
)
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
3 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
017aaa063
10
I
D
(A)
1
(1)
(2)
−
1
10
10
10
(3)
(4)
(5)
−
2
(6)
−
3
−
1
2
10
1
10
10
V
DS
(V)
I
DM
= single pulse
(1) t
p
= 100
μ
s
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) DC;
T
sp
= 25
°
C
(5) t
p
= 100 ms
(6) DC;
T
amb
= 25
°
C; drain mounting pad 1 cm
2
Fig 3.
Per transistor: Safe operating area; junction to ambient; continuous and peak drain currents as a
function of drain-source voltage
6. Thermal
characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
Per transistor
[1]
[2]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
–
330
280
–
380
320
115
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
–
250
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
4 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
017aaa064
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 4.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
017aaa065
3
10
Z
th(j-a)
duty cycle = 1
0.75
(K/W)
0.5
0.33
2
10
0.25
0.1
0.2
0.05
0.02
0.01
0
10
1
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
5 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max Unit
Per transistor
Static characteristics
V
(BR)DSS
V
GS(th)
I
DSS
drain-source breakdown
I
D
= 10
μ
A; V
GS
= 0 V
voltage
60
–
–
V
V
gate-source threshold
voltage
I
D
= 250
μ
A; V
DS
= V
GS
1.1
1.75 2.4
drain leakage current
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
°
C
–
–
–
–
–
–
1
μ
A
μ
A
nA
T
j
= 150
°
C
10
100
I
GSS
gate leakage current
V
GS
=
±
20 V; V
DS
= 0 V
[1]
[1]
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 50 mA
V
GS
= 10 V; I
D
= 500 mA
V
DS
= 10 V; I
D
= 200 mA
–
–
–
1.3
1
2
Ω
1.6
–
Ω
g
fs
forward
400
mS
transconductance
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
I
D
= 300 mA;
V
DS
= 30 V;
V
GS
= 4.5 V
–
–
–
–
–
–
0.6
0.2
0.2
30
7
0.8
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz
50
–
C
oss
C
rss
reverse transfer
capacitance
4
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DD
= 50 V;
R
L
= 250
Ω
;
V
GS
= 10 V;
R
G
= 6
Ω
–
–
–
–
3
6
–
ns
ns
ns
ns
4
turn-off delay time
fall time
10
5
20
–
Source-drain diode
V
SD
source-drain voltage
I
S
= 115 mA; V
GS
= 0 V
0.47 0.75 1.1
V
[1] Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.01.
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
6 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
017aaa017
017aaa018
−
3
−
4
−
5
−
6
0.7
D
(A)
0.6
10
V
GS
= 4.0 V
I
3.5 V
I
D
(A)
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
3.25 V
3.0 V
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0
1
2
3
(V)
V
(V)
DS
GS
T
amb
= 25
°
C
T
amb
= 25
°
C; V
DS
= 5 V
(1) minimum
values
(2) typical
values
(3) maximum
values
Fig 6.
Per transistor: Output characteristics: drain
current as a function of drain-source voltage;
typical values
Fig 7.
Per transistor: Sub-threshold drain current as
a function of gate-source voltage
017aaa019
017aaa020
10.0
6.0
R
(
Ω
)
DSon
R
(
Ω
)
DSon
(1)
7.5
5.0
2.5
0.0
(2)
4.0
2.0
0.0
(1)
(2)
(3)
(5)
(4)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
GS
10.0
(V)
I
D
(A)
T
amb
= 25
°
C
I
D
= 500 mA
(1) V
GS
= 3.25 V
(2) V
GS
= 3.5 V
(3) V
GS
= 4 V
(4) V
GS
= 5 V
(5) V
GS
= 10 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
Fig 8.
Per transistor: Drain-source on-state
Fig 9.
Per transistor: Drain-source on-state
resistance as a function of gate-source
voltage; typical values
resistance as a function of drain current;
typical values
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
7 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
017aaa021
017aaa022
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
(2)
(1)
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
−
60
0
60
120
180
(
°
C)
T
amb
GS
V
DS
> I
D
×
R
DSon
R
DSon
—————————–
R
DSon
(
25
°
C
)
a
=
(1) T
amb
= 25
°
C
(2) T
amb
= 150
°
C
Fig 10.
Per transistor: Transfer characteristics: drain
current as a function of gate-source voltage;
typical values
Fig 11.
Per transistor: Normalized drain-source
on-state resistance as a function of ambient
temperature; typical values
017aaa023
017aaa024
2
3.0
10
V
GS(th)
(V)
(1)
(2)
(3)
(1)
C
(pF)
2.0
1.0
0.0
(2)
10
(3)
1
10
−
1
2
−
60
0
60
120
180
(
°
C)
1
10
10
T
amb
V
DS
(V)
I
D
= 0.25 mA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
(1) C
iss
(1) maximum
values
(2) typical
values
(2) C
oss
(3) C
rss
(3) minimum
values
Fig 12.
Per transistor: Gate-source threshold voltage
as a function of ambient temperature
Fig 13.
Per transistor: Input, output and reverse
transfer capacitances as a function of
drain-source voltage; typical values
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
8 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
017aaa025
5.0
V
GS
(V)
4.0
V
DS
I
D
3.0
2.0
1.0
0.0
V
GS(pl)
V
V
GS(th)
GS
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
0.0
0.2
0.4
0.6
0.8
Q
G
(nC)
003aaa508
I
D
= 300 mA; V
DS
= 30 V; T
amb
= 25
°
C
Fig 14.
Per transistor: Gate-source voltage as a
function of gate charge; typical values
Fig 15.
Per transistor: Gate charge waveform
definitions
017aaa026
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
SD
(V)
V
GS
= 0 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
Fig 16.
Per transistor: Source current as a function of source-drain voltage; typical values
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
9 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
8. Test
information
t
t
1
2
P
duty cycle
δ
=
t
2
t
1
t
006aaa812
Fig 17.
Duty cycle definition
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
10 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
9. Package
outline
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
Fig 18.
Package outline SOT666
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
11 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
10. Soldering
2.75
2.45
2.1
1.6
solder lands
0.4
(6
×
)
0.3
(2
×
)
0.25
(2
×
)
placement area
0.538
0.55
1.075
1.7
2
(2
×
)
solder paste
occupied area
0.325 0.375
(4
×
) (4
×
)
Dimensions in mm
1.7
0.45
0.6
(4
×
)
(2
×
)
0.5
0.65
(4
×
)
(2
×
)
sot666_fr
Reflow soldering is the only recommended soldering method.
Fig 19.
Reflow soldering footprint SOT666
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
12 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
11. Revision
history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
2N7002PV v.1
20100805
Product data sheet
–
–
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
13 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of an NXP Semiconductors product can reasonably be expected
12.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
14 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
2N7002PV
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 1 — 5 August 2010
15 of 16
2N7002PV
NXP Semiconductors
60 V, 350 mA N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
Quality information . . . . . . . . . . . . . . . . . . . . .
10
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
11
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
3
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
14
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
14
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
4
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
4
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2010.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 5 August 2010
Document identifier: 2N7002PV
