Nexperia-2N7002PW-115
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Should be replaced with:
–
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.
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2N7002PW
60
V
,
3
10 mA N-channel Trench MOSFET
Rev. 02 — 29 July 2010
Product data sheet
1. Product
profile
1.1 General
description
N-channel enhancement mode Field-Effect Transistor (FET) in a very small
SOT323
(SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
1.2 Features
and benefits
AEC-Q101 qualified
Trench MOSFET technology
Very fast switching
Logic-level compatible
1.3 Applications
High-speed line driver
Low-side loadswitch
Relay driver
Switching circuits
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
drain-source
voltage
T
amb
= 25 °C
–
–
–
–
60
V
V
GS
I
D
gate-source
voltage
-20
–
20
V
[1]
drain current
V
GS
= 10 V; T
amb
= 25 °C
310 mA
Static characteristics
R
DSon
drain-source
V
GS
= 10 V; I
D
= 500 mA;
T
j
= 25 °C; t
p
≤
300 µs; pulsed;
δ ≤
0.01
–
1
1.6
Ω
on-state
resistance
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
S
D
gate
3
D
2
source
drain
3
G
1
2
mbb076
S
SOT323 (SC-70)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2N7002PW
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 4.
Marking codes
Type number
2N7002PW
Marking code
[1]
X8%
[1] %
= -: made in Hong Kong; % = p: made in Hong Kong; % = t: made in Malaysia; % = W: made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
T
amb
= 25 °C
–
V
GS
-20
20
V
[1]
[1]
I
D
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤
10 µs
T
amb
= 25 °C
–
310
240
1.2
mA
mA
A
–
I
DM
P
tot
peak drain current
–
[2]
[1]
total power dissipation
–
260
310
830
150
150
150
mW
mW
mW
°C
–
T
sp
= 25 °C
–
T
j
junction temperature
ambient temperature
storage temperature
–
T
amb
T
stg
-55
-65
°C
°C
Source-drain diode
I
S
source current
[1]
T
amb
= 25 °C
–
310
mA
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
2 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa001
017aaa002
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
−
75
0
−
75
−
25
25
75
125
T
175
(
°
C)
−
25
25
75
125
175
(
°
C)
amb
T
amb
Fig 1.
Normalized total power dissipation as a
function of ambient temperature
Fig 2.
Normalized continuous drain current as a
function of ambient temperature
017aaa027
10
I
D
(A)
1
(1)
(2)
−
1
10
10
10
(3)
(4)
(5)
−
2
−
3
(6)
−
1
2
10
1
10
10
V
DS
(V)
I
DM
= single pulse
(1) t
p
= 100
μ
s
(2) t
p
= 1 ms
(3) t
p
= 10 ms
(4) t
p
= 100 ms
(5) DC; T
sp
= 25 °C
(6) DC; T
amb
= 25 °C; drain mounting pad 1 cm
2
Fig 3.
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
3 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
415
350
Max
480
400
Unit
K/W
K/W
[1]
[2]
thermal resistance
from junction to
ambient
in free air
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
–
150
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.
017aaa028
3
10
duty cycle = 1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
0.2
2
10
0.25
0.1
0.05
0.02
0.01
0
10
1
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa029
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
2
0.25
10
0.1
0.05
0.02
0.01
0
10
1
10
−
3
−
2
−
1
2
3
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm
2
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2N7002PW
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© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
4 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 10 µA; V
GS
= 0 V; T
j
= 25 °C
60
–
–
V
V
V
GSth
gate-source threshold
I
D
= 250 µA; V
DS
= V
GS
; T
j
= 25 °C
voltage
1.1
1.75
2.4
I
DSS
drain leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 60 V; V
GS
= 0 V; T
j
= 150 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
–
1
µA
µA
nA
nA
Ω
–
10
100
100
2
I
GSS
gate leakage current
–
–
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 50 mA; pulsed;
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
1.3
V
GS
= 10 V; I
D
= 500 mA; pulsed;
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
–
–
1
1.6
–
Ω
g
fs
forward
V
DS
= 10 V; I
D
= 200 mA; pulsed;
400
mS
transconductance
t
p
≤
300 µs;
δ ≤
0.01 ; T
j
= 25 °C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
I
D
= 300 mA; V
DS
= 30 V; V
GS
= 4.5 V;
T
j
= 25 °C
–
–
–
–
–
–
0.6
0.2
0.2
30
7
0.8
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz;
T
j
= 25 °C
50
–
C
oss
C
rss
reverse transfer
capacitance
4
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 50 V; R
L
= 250
Ω
; V
GS
= 10 V;
R
G(ext)
= 6
Ω
; T
j
= 25 °C
–
–
–
–
3
6
–
ns
ns
ns
ns
4
turn-off delay time
fall time
10
5
20
–
Source-drain diode
V
SD
source-drain voltage
I
S
= 115 mA; V
GS
= 0 V; T
j
= 25 °C
0.47
0.75
1.1
V
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
5 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa017
017aaa018
−
3
−
4
−
5
−
6
0.7
10
V
= 4.0 V
GS
I
D
(A)
0.6
3.5 V
I
D
(A)
0.5
0.4
0.3
0.2
0.1
0.0
10
10
10
3.25 V
3.0 V
(1)
(2)
(3)
2.75 V
2.5 V
0.0
1.0
2.0
3.0
V
4.0
0
1
2
3
(V)
V
(V)
GS
DS
T
amb
= 25 °C
T
amb
= 25 °C; V
DS
= 5 V
(1) minimum values
(2) typical values
(3) maximum values
Fig 6.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 7.
Sub-threshold drain current as a function of
gate-source voltage
017aaa019
017aaa020
10.0
6.0
R
(
Ω
)
DSon
R
DSon
(1)
(
Ω
)
7.5
5.0
2.5
0.0
(2)
4.0
2.0
0.0
(1)
(2)
(3)
(5)
(4)
0.0
0.2
0.4
0.6
0.8
1.0
0.0
2.0
4.0
6.0
8.0
V
10.0
(V)
I
(A)
D
GS
T
amb
= 25 °C
I
D
= 500 mA
(1) V
GS
= 3.25 V
(2) V
GS
= 3.5 V
(3) V
GS
= 4 V
(4) V
GS
= 5 V
(5) V
GS
= 10 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
6 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa021
017aaa022
1.0
2.4
1.8
1.2
0.6
0.0
I
D
(A)
a
0.8
(1)
(2)
0.6
0.4
0.2
0.0
(2)
(1)
0.0
1.0
2.0
3.0
4.0
V
5.0
(V)
−
60
0
60
120
180
(
°
C)
T
GS
amb
V
DS
> I
D
× R
DSon
(1) T
amb
= 25 °C
(2) T
amb
= 150 °C
Fig 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 11.
Normalized drain-source on-state resistance as
a function of ambient temperature; typical
values
017aaa023
017aaa024
2
3.0
10
V
GS(th)
(V)
(1)
(2)
(3)
(1)
C
(pF)
2.0
1.0
0.0
(2)
10
(3)
1
10
−
1
2
−
60
0
60
120
180
(
°
C)
1
10
10
T
V
(V)
DS
amb
f = 1 MHz; V
GS
= 0 V
(1) C
iss
I
D
= 0.25 mA; V
DS
= V
GS
(1) maximum values
(2) typical values
(2) C
oss
(3) C
rss
(3) minimum values
Fig 12.
Gate-source threshold voltage as a function of
ambient temperature
Fig 13.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
7 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
017aaa025
5.0
V
DS
V
GS
(V)
I
4.0
D
V
GS(pl)
3.0
2.0
1.0
0.0
V
V
GS(th)
GS
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0.0
0.2
0.4
0.6
0.8
Q
(nC)
G
I
D
= 300 mA; V
DS
= 30 V; T
amb
= 25 °C
Fig 14.
Gate-source voltage as a function of gate
charge; typical values
Fig 15.
Gate charge waveform definitions
017aaa026
1.2
I
S
(A)
0.8
(1)
(2)
0.4
0.0
0.0
0.4
0.8
1.2
V
(V)
SD
V
GS
= 0 V
(1) T
amb
= 150 °C
(2) T
amb
= 25 °C
Fig 16.
Source current as a function of source-drain voltage; typical values
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
8 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
8. Test
information
t
t
1
2
P
duty cycle
δ
=
t
2
t
1
t
006aaa812
Fig 17.
Duty cycle definition
2N7002PW
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© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
9 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
9. Package
outline
Plastic surface-mounted package; 3 leads
SOT323
D
B
E
A
X
H
y
v
M
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M
B
1
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
A
UNIT
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1
0.8
0.4
0.3
0.25
0.10
2.2
1.8
1.35
1.15
2.2
2.0
0.45
0.15
0.23
0.13
mm
0.1
1.3
0.65
0.2
0.2
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-04
06-03-16
SOT323
SC-70
Fig 18.
Package outline SOT323 (SC-70)
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
10 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
10. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
3
0.6
2.35
solder paste
occupied area
1.3
(3
×
)
0.5
(3
×
)
1
Dimensions in mm
0.55
(3
×
)
sot323_fr
Fig 19.
Reflow soldering footprint for SOT323 (SC-70)
4.6
2.575
1.425
(3
×
)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2
×
)
sot323_fw
Fig 20.
Wave soldering footprint for SOT323 (SC-70)
2N7002PW
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© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
11 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
11. Revision
history
Table 8.
Revision history
Document ID
2N7002PW v.2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20100729
Product data sheet
–
2N7002PW_1
•
Correction of thermal values.
•
Correction of various characteristics values including related graphs.
20100422 Product
data sheet
2N7002PW_1
–
–
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
12 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Suitability for use
— NXP Semiconductors products are not designed,
12.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes
— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
13 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I²C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.V.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
13. Contact information
2N7002PW
All information provided in this document is subject to legal disclaimers.
© NXP B.
V
. 2010. All rights reserved.
Product data sheet
Rev. 02 — 29 July 2010
14 of 15
2N7002PW
NXP Semiconductors
60 V, 310 mA N-channel Trench MOSFET
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . . .9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .12
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . .13
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .14
12.1
12.2
12.3
12.4
13
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . . .14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2010.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 29 July 2010
Document identifier: 2N7002PW
