Nexperia-2PB1424-115
| Part # | Nexperia-2PB1424-115 |
Download  | Nexperia-2PB1424-115 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
2PB1424
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
Rev. 02 — 15 January 2007
Product data sheet
1. Product
profile
1.1 General
description
PNP low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a medium power
SOT89 (SC-62/TO-243) flat lead Surface-Mounted Device (SMD) plastic package.
NPN complement: 2PD2150.
1.2 Features
I
Low collector-emitter saturation voltage V
CEsat
I
High collector current capability I
C
and I
CM
I
High collector current gain (h
FE
) at high I
C
I
High efficiency due to less heat generation
I
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I
DC-to-DC conversion
I
MOSFET gate driving
I
Motor control
I
Charging circuits
I
Power switches (e.g. motors, fans)
I
Thin Film
T
r
ansistor (TFT) backlight inverter
1.4 Quick
reference data
Table 1.
Symbol Parameter
V
CEO
collector-emitter voltage
I
C
Quick reference data
Conditions
Min
Typ
Max
−
20
−
3
Unit
V
open base
–
–
–
–
–
–
collector current
A
I
CM
peak collector current
single pulse;
−
5
A
t
p
≤
1 ms
[1]
V
CEsat
collector-emitter
I
C
=
−
2 A;
–
−
0.2
−
0.5
V
saturation voltage
I
B
=
−
0.1 A
[1] Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02.
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
emitter
Simplified outline
Symbol
2
1
2
collector
base
3
3
3
2
1
006aaa231
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
2PB1424
SC-62
plastic surface-mounted package; collector pad for
good heat transfer; 3 leads
SOT89
4. Marking
Table 4.
Marking codes
Type number
Marking code
2PB1424
M1
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
Min
Max
−
20
−
20
−
6
Unit
V
collector-base voltage
open emitter
–
–
–
–
–
collector-emitter voltage
open base
V
emitter-base voltage
collector current
open collector
V
−
3
A
I
CM
peak collector current
single pulse;
−
5
A
t
p
≤
1 ms
[1]
[2]
P
tot
total power dissipation
T
amb
≤
25
°
C
–
0.5
W
–
2
W
T
j
junction temperature
ambient temperature
storage temperature
–
150
+150
+150
°
C
°
C
°
C
T
amb
T
stg
−
65
−
65
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
2 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
006aaa943
2.4
(1)
P
tot
(W)
1.6
0.8
(2)
0
−
75
−
25
0
25
75
125
175
(
°
C)
T
amb
(1) Ceramic
PCB, Al
2
O
3
, standard footprint
(2) FR4
PCB, standard footprint
Fig 1.
Power derating curves
6. Thermal
characteristics
Table 6.
Symbol Parameter
R
th(j-a)
thermal resistance from
junction to ambient
Thermal characteristics
Conditions
Min
Typ
Max
250
62
Unit
K/W
K/W
[1]
in free air
–
–
–
–
[2]
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on a ceramic PCB, Al
2
O
3
, standard footprint.
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
3 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
006aaa944
3
10
duty cycle =
Z
th(j-a)
1
(K/W)
0.75
2
0.5
0.2
10
0.33
0.1
0.05
10
0.02
0.01
1
0
−
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa945
2
10
duty cycle =
1
Z
th(j-a)
0.75
(K/W)
0.5
0.2
0.33
10
0.1
0.05
0.02
0.01
1
0
−
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al
2
O
3
, standard footprint
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
4 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
I
CBO
collector-base cut-off
V
CB
=
−
20 V; I
E
= 0 A
Min
Typ
Max
Unit
–
–
−
0.1
µ
A
current
I
EBO
emitter-base cut-off
current
V
EB
=
−
5 V; I
C
= 0 A
–
–
−
0.1
µ
A
h
FE
DC current gain
V
CE
=
−
2 V; I
C
=
−
0.1 A
I
C
=
−
2 A; I
B
=
−
0.1 A
180
–
–
390
[1]
V
CEsat
collector-emitter
−
0.2
−
0.5
V
saturation voltage
f
T
transition frequency
V
CE
=
−
2 V; I
E
= 0.5 A;
f = 100 MHz
–
–
–
125
130
37
–
–
–
MHz
pF
pF
C
ib
C
ob
common-base input
capacitance
V
EB
=
−
5 V; I
E
= i
e
= 0 A;
f = 1 MHz
common-base output
V
CB
=
−
10 V; I
E
= i
e
= 0 A;
capacitance f
= 1 MHz
[1] Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02.
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
5 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
006aaa946
006aaa947
4
−
10
−
2.0
I
(mA) =
−
20
−
14
−
12
B
I
C
I
C
−
18
−
16
(A)
(mA)
−
1.6
−
10
−
8
3
2
−
10
−
1.2
−
0.8
−
0.4
0
−
6
−
4
(1)
(2) (3)
−
10
−
10
−
1
−
2
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
−
1.2
−
1.4
(V)
0
−
0.2
−
0.4
−
0.6
−
0.8
−
1.0
(V)
V
V
BE
CE
V
CE
=
−
2 V
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
Fig 4.
Collector current as a function of base-emitter
voltage; typical values
Fig 5.
Collector current as a function of
collector-emitter voltage; typical values
006aaa948
006aaa949
3
−
5
10
I
(mA) =
−
50
B
I
C
(1)
(2)
(A)
−
45
−
35
h
FE
−
4
−
40
−
30
(3)
2
10
−
25
−
15
−
3
−
2
−
1
0
−
20
−
10
−
5
10
1
2
3
4
0
−
1
−
2
−
3
−
4
−
5
(V)
−
1
−
10
−
10
−
10
−
10
V
I (mA)
C
CE
T
amb
= 25
°
C
V
CE
=
−
2 V
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
Fig 6.
Collector current as a function of
collector-emitter voltage; typical values
Fig 7.
DC current gain as a function of collector
current; typical values
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
6 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
006aaa950
006aaa951
−
1
−
1
V
V
CEsat
(V)
CEsat
(V)
−
1
−
1
−
10
−
10
−
10
−
10
−
10
−
10
(1)
(2)
(3)
(1)
(2)
(3)
−
2
−
3
−
2
−
3
2
3
4
2
3
4
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
−
10
I
(mA)
I (mA)
C
C
I
C
/I
B
= 10
I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
Fig 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa952
006aaa953
3
−
1
10
V
f
T
(MHz)
CEsat
(V)
(1)
(2)
(3)
−
1
2
−
10
−
10
−
10
10
−
2
−
3
10
1
2
3
4
2
3
−
1
−
10
−
10
−
10
−
10
1
10
10
10
I
(mA)
I (mA)
E
C
I
C
/I
B
= 50
T
amb
= 25
°
C; V
CE
=
−
2 V
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
40
°
C
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 11. Transition frequency as a function of emitter
current; typical values
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
7 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
006aaa954
006aaa955
3
3
10
10
C
ib
C
ob
(pF)
(pF)
2
2
10
10
10
−
10
10
−
10
−
1
2
−
1
2
−
1
−
10
−
10
−
1
−
10
−
10
V
(V)
V
(V)
CB
EB
T
amb
= 25
°
C; f = 1 MHz; I
E
= i
e
= 0 A
T
amb
= 25
°
C; f = 1 MHz; I
E
= i
e
= 0 A
Fig 12. Common-base input capacitance as a function
of emitter-base voltage; typical values
Fig 13. Common-base output capacitance as a
function of collector-base voltage; typical
values
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
8 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
8. Package
outline
4.6
4.4
1.8
1.4
1.6
1.4
2.6
2.4
4.25
3.75
1.2
0.8
1
2
3
0.53
0.40
0.48
0.35
0.44
0.23
1.5
3
Dimensions in mm
06-08-29
Fig 14. Package outline SOT89 (SC-62/TO-243)
9. Packing
information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
1000
4000
2PB1424
SOT89
8 mm pitch, 12 mm tape and reel
-115
-135
[1] For
further information and the availability of packing methods, see
Section 13
.
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
9 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
10. Soldering
4.75
2.25
2.00
1.90
1.20
solder lands
solder resist
0.85
0.20
1.20
1.20
occupied area
1.70
solder paste
4.60
4.85
Dimensions in mm
0.50
1.20
1.00
(3x)
3
2
1
msa442
0.60 (3x)
0.70 (3x)
3.70
3.95
SOT89 standard mounting conditions for reflow soldering
Fig 15. Reflow soldering footprint SOT89 (SC-62/TO-243)
6.60
2.40
3.50
2
solder lands
solder resist
7.60
0.50
1.20
3
1
occupied area
3.00
Dimensions in mm
preferred transport direction during soldering
msa423
1.50
0.70
5.30
Not recommended for wave soldering
Fig 16. Wave soldering footprint SOT89 (SC-62/TO-243)
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
10 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
11. Revision history
Table 9.
Revision history
Document ID
2PB1424_2
Release date
Data sheet status
Change notice
Supersedes
20070115
Product data sheet
–
2PB1424_1
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP
Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
T
a
ble 1 “Quick reference data”
: I
C
collector current added
•
T
a
ble 1 “Quick reference data”
: I
CM
peak collector current maximum value adapted
•
T
a
ble 1 “Quick reference data”
: V
CEsat
collector-emitter saturation voltage added
•
T
a
ble 5 “Limiting values”
: V
CBO
collector-base voltage maximum value adapted
•
T
a
ble 5 “Limiting values”
: V
EBO
emitter-base voltage maximum value adapted
•
T
a
ble 5 “Limiting values”
: I
C
collector current maximum value adapted
•
T
a
ble 5 “Limiting values”
: I
CM
peak collector current maximum value adapted
•
T
a
ble 5 “Limiting values”
: P
tot
total power dissipation for ceramic PCB condition added
•
Figure 1 “Power derating curves”
: adapted
•
T
a
ble 6 “Thermal characteristics”
: adapted
•
T
a
ble 6 “Thermal characteristics”
: R
th(j-a)
thermal resistance from junction to ambient for ceramic PCB
condition added
•
Figure 2
: t
p
pulse time redefined to pulse duration
•
Figure 3
: added
•
T
a
ble 7 “Characteristics”
: I
CBO
collector-base cut-off current conditions adapted
•
T
a
ble 7 “Characteristics”
: V
CEsat
collector-emitter saturation voltage typical value added
•
T
a
ble 7 “Characteristics”
: f
T
transition frequency conditions and typical value adapted
•
T
a
ble 7 “Characteristics”
: C
ib
common-base input capacitance added
•
T
a
ble 7 “Characteristics”
: C
ob
common-base output capacitance added
•
Figure 4
,
6
,
10
,
11
,
12
,
13
and
16
: added
•
Figure 5
,
7
,
8
and
9
: adapted
•
Section 12 “Legal information”
: updated
2PB1424_1
20050502
Product data sheet
–
–
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
11 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of a NXP Semiconductors product can reasonably be expected to
12.2 Definitions
result in personal injur
y
,
d
eath or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
13. Contact information
2PB1424_2
© NXP B.
V
.
2
007. All rights reserved.
Product data sheet
Rev. 02 — 15 January 2007
12 of 13
2PB1424
NXP Semiconductors
20
V
, 3 A
P
NP low V
CEsat
(BISS) transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
9
Packing information. . . . . . . . . . . . . . . . . . . . . .
9
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
1
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
12
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
12.1
12.2
12.3
12.4
13
14
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . .
12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
007.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 January 2007
Document identifier: 2PB1424_2
