Nexperia-BC69PASX
| Part # | Nexperia-BC69PASX |
Download  | Nexperia-BC69PASX |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
BC69PAS series
ꢃ
ꢂ
‘
ꢁ
ꢀ
ꢁ
ꢀ
1
)
20
V
, 2 A
P
NP medium power transistors
‘
Rev. 1 — 19 June 2015
Product data sheet
1. Product
profile
1.1 General
description
PNP medium power transistors in an ultra thin DFN2020D-3 (SOT1061D) leadless small
Surface-Mounted Device (SMD) plastic package with medium power capability and visible
and solderable side pads.
NPN complement: BC68PAS series
1.2 Features
and benefits
High collector current capability
Three current gain selections
I
C
and I
CM
Reduced Printed-Circuit Board (PCB)
Leadless very small SMD plastic
area requirements
package with medium power capability
Exposed heat sink for excellent thermal
Suitable for Automatic Optical
and electrical conductivity
Inspection (AOI) of solder joint
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Battery driven devices
MOSFET drivers
High-side switches
Power management
Amplifiers
1.4 Quick
reference data
Table 1.
Quick reference data
T
amb
= 25
C unless otherwise specified
Symbol Parameter
Conditions
collector-emitter voltage
open base
Min Typ Max
Unit
V
CEO
–
–
20
V
I
C
collector current
peak collector current
DC current gain
–
–
–
–
–
–
2
A
A
I
CM
h
FE
single pulse; t
p
1 ms
–
3
[1]
[1]
[1]
V
CE
=
1 V; I
C
=
500 mA
V
CE
=
1 V; I
C
=
500 mA
V
CE
=
1 V; I
C
=
500 mA
85
100
160
375
250
375
h
FE
selection -16
h
FE
selection -25
[1] Pulse
test: t
p
300 ms;
0.02.
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
ꢃ
ꢃ
2
emitter
3
collector
ꢁ
ꢂ
VPꢀꢁꢂ
ꢁ
ꢂ
7UDQVSDUHQWꢀWRSꢀYLHZ
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BC69PAS
DFN2020D-3 plastic
thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body
2
2
0.65 mm.
SOT1061D
BC69-16PAS
BC69-25PAS
4. Marking
Table 4.
Marking codes
Type number
BC69PAS
Marking code
C1
C2
C3
BC69-16PAS
BC69-25PAS
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
open emitter
open base
Min
Max
32
20
5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
–
–
–
–
–
V
open collector
V
2
A
I
CM
peak collector current
single pulse;
3
A
t
p
1 ms
I
B
base current
–
0.4
A
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
2 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
Table 5.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
420
830
1.1
Unit
mW
mW
W
[1]
[2]
[3]
[4]
[5]
P
tot
total power dissipation
T
amb
25
C
–
–
–
–
810
1.65
150
150
150
mW
W
–
T
j
junction temperature
ambient temperature
storage temperature
–
C
T
amb
T
stg
55
65
C
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[3] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
[4] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
.
ꢀꢀꢃDDFꢃꢄꢃ
ꢂꢉꢊ
3
WRW
ꢄꢁꢅ
ꢄꢂꢅ
ꢄ:ꢅ
ꢁꢉꢈ
ꢁꢉꢊ
ꢊꢉꢈ
ꢊꢉꢊ
ꢄꢃꢅ
ꢄꢋꢅ
ꢄꢈꢅ
ꢆꢇꢈ
ꢆꢂꢈ
ꢂꢈ
ꢇꢈ
ꢁꢂꢈ
ꢁꢇꢈ
ꢀꢄ&ꢅ
7
DPE
(1) FR4
PCB, 4-layer copper, 1 cm
2
(2) FR4
PCB, single-sided copper, 6 cm
2
(3) FR4
PCB, single-sided copper, 1 cm
2
(4) FR4
PCB, 4-layer copper, standard footprint
(5) FR4
PCB, single-sided copper, standard footprint
Fig 1.
Power derating curves
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
3 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Max
298
151
114
154
76
Unit
K/W
K/W
K/W
K/W
K/W
K/W
[1]
[2]
[3]
[4]
[5]
thermal resistance from junction to ambient
in free air
R
th(j-sp)
thermal resistance from junction to solder point
in free air
20
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
[3] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
[4] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
[5] Device
mounted on an FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
ꢀꢀꢃDDFꢃꢅꢂ
ꢃ
ꢁꢊ
=
WKꢄMꢆDꢅ
GXWꢀFFOHꢀ ꢀꢁ
ꢄ.ꢌ:ꢅ
ꢊꢉꢇꢈ
ꢊꢉꢈ
ꢂ
ꢁꢊ
ꢊꢉꢃꢃ
ꢊꢉꢂꢈ
ꢊꢉꢂ
ꢊꢉꢁ
ꢊꢉꢊꢈ
ꢁꢊ
ꢊꢉꢊꢂ
ꢊꢉꢊꢁ
ꢁ
ꢊ
ꢆ
ꢁ
ꢁꢊ
ꢁꢊ
ꢆ
ꢈ
ꢆ
ꢋ
ꢆ
ꢃ
ꢆ
ꢂ
ꢆ
ꢁ
ꢂ
ꢃ
ꢁꢊ
ꢁꢊ
ꢁꢊ
ꢁꢊ
ꢁ
ꢁꢊ
ꢁꢊ
ꢁꢊ
W
ꢀꢄVꢅ
S
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
4 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac684
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0
0.01
1
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
Fig 3.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
006aac685
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
1
0
0.01
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
Fig 4.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
5 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac686
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
2
10
0.5
0.33
0.25
0.2
0.1
10
0.05
0.02
0.01
0
1
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, tin-plated and standard footprint
Fig 5.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
006aac687
3
10
Z
th(j-a)
(K/W)
2
10
duty cycle = 1
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
1
0.01
0
–1
10
–5
–4
–3
–2
–1
2
3
10
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, 4-layer copper, tin-plated and mounting pad for collector 1 cm
2
Fig 6.
Transient thermal impedance from junction to ambient as a function of pulse duration for; typical values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
6 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
C unless otherwise specified
Symbol
Parameter
Conditions
Min
–
Typ
Max Unit
I
CBO
collector-base cut-off current
V
CB
=
25 V; I
E
= 0 A
–
100 nA
V
CB
=
25 V; I
E
= 0 A; T
j
= 150
C
V
EB
=
5 V; I
C
= 0 A
–
–
10
A
I
EBO
h
FE
emitter-base cut-off current
DC current gain
–
–
100 nA
V
CE
=
10 V; I
C
=
5 mA
V
CE
=
1 V; I
C
=
500 mA
V
CE
=
1 V; I
C
=
1 A
50
85
60
40
100
160
–
–
–
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
–
375
–
–
V
CE
=
1 V; I
C
=
2 A
–
–
h
FE
selection-16
h
FE
selection-25
V
CE
=
1 V; I
C
=
500 mA
V
CE
=
1 V; I
C
=
500 mA
I
C
=
1 A; I
B
=
100 mA
I
C
=
2 A; I
B
=
200 mA
I
C
=
5 mA; V
CE
=
10 V
I
C
=
1 A; V
CE
=
1 V
–
250
375
–
V
CEsat
collector-emitter saturation
voltage
–
0.5
0.6
0.7
1
V
–
–
V
V
BE
base-emitter voltage
–
–
V
–
–
V
f
T
transition frequency
collector capacitance
V
CE
=
5 V; I
C
=
50 mA; f = 100 MHz
V
CB
=
10 V; I
E
= i
e
= 0 A; f = 1 MHz
40
–
140
28
–
MHz
pF
C
c
–
[1] Pulse
test: t
p
300 ms;
0.02
006aac697
006aab403
300
−
2.4
C
I
(A)
h
FE
(1)
(2)
−
2.0
I
(mA) =
−
18.0
B
−
16.2
−
12.6
−
14.4
−
10.8
200
−
1.6
−
1.2
−
0.8
−
9.0
−
5.4
−
7.2
−
3.6
100
(3)
−
0.4
−
1.8
0
0
-10
-4
-3
-2
-1
-10
-10
-10
-1
-10
0
−
1
−
2
−
3
−
4
−
5
I
(A)
V
CE
(V)
C
V
CE
=
1 V
(1) T
amb
= 100
C
(2)
amb
= 25
C
(3) T
amb
=
55
C
T
amb
= 25
C
T
Fig 7.
h
FE
selection -16: DC current gain as a
function of collector current; typical values
Fig 8.
h
FE
selection -16: Collector current as a
function of collector-emitter voltage; typical
values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
7 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac698
006aac699
-1.2
-1
V
V
(V)
CEsat
(V)
BE
(1)
-1
-0.8
-10
(1)
(2)
(2)
(3)
-2
(3)
-0.4
-10
-3
0.0
-1
-10
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
V
CE
=
1 V
I
C
/I
B
= 10
(1) T
amb
=
55
C
(2) T
amb
= 25
C
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3)
T
amb
= 100
C
(3) T
amb
=
55
C
Fig 9.
h
FE
selection -16: Base-emitter voltage as a
function of collector current; typical values
Fig 10.
h
FE
selection -16: Collector-emitter saturation
voltage as a function of collector current;
typical values
006aac707
006aab404
400
−
2.4
I
C
(1)
h
(A)
FE
I
(mA) =
−
12.0
−
2.0
B
−
10.8
−
8.4
300
(2)
−
9.6
−
7.2
−
1.6
−
1.2
−
0.8
−
0.4
0
−
6.0
−
3.6
200
−
4.8
−
2.4
(3)
100
−
1.2
0
-10
-4
-3
-2
-1
-10
-10
-10
-1
-10
0
−
1
−
2
−
3
−
4
−
5
I
(A)
V
CE
(V)
C
V
CE
=
1 V
T
amb
= 25
C
(1) T
amb
= 100
C
(2)
T
amb
= 25
C
(3) T
amb
=
55
C
Fig 11.
h
FE
selection -25: DC current gain as a
function of collector current; typical values
Fig 12.
h
FE
selection -25: Collector current as a
function of collector-emitter voltage; typical
values
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
8 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
006aac708
aaa-018434
-1.2
-1
V
V
(V)
CEsat
(V)
BE
(1)
-1
-0.8
-10
(2)
(3)
(1)
(3)
-2
-0.4
-10
(2)
-3
0.0
-1
-10
2
3
4
-1
2
3
4
-10
-1
-10
-10
-10
-10
(mA)
-10
-1
-10
-10
-10
-10
I (mA)
C
I
C
V
CE
=
1 V
I
C
/I
B
= 10
(1) T
amb
=
55
C
(2) T
amb
= 25
C
(1) T
amb
= 100
C
(2) T
amb
= 25
C
(3)
T
amb
= 100
C
(3) T
amb
=
55
C
Fig 13.
h
FE
selection -25: Base-emitter voltage as a
function of collector current; typical values
Fig 14.
h
FE
selection -25: Collector-emitter saturation
voltage as a function of collector current;
typical values
8. Test
information
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
9 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
9. Package
outline
0.65
max
1.3
0.45
0.35
0.35
0.25
0.04
max
1
2
2.1
1.9
1.1
0.9
0.3
0.2
3
1.6
1.4
2.1
1.9
Dimensions in mm
14-03-18
Fig 15.
Package outline DFN2020D-3 (SOT1061D)
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
10 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
10. Soldering
Footprint information for reflow soldering of DFN2020D-3 package
SOT1061D
2.1
1.7
1.3
0.4 (2x)
0.3 (2x)
0.5 (2x)
0.5 (2x)
0.6 (2x)
0.7 (2x)
0.25
1.1
0.35
0.3
0.25
2.5 2.3
0.25
1
1.1 1.2
0.35
0.35
0.35
0.3
0.4
0.5
1.5
1.6
1.7
occupied area
solder resist
solder paste
solder lands
Dimensions in mm
14-03-05
14-03-12
Issue date
sot1061d_fr
Fig 16.
Reflow soldering footprint DFN2020D-3 (SOT1061D)
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
11 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
11. Revision
history
Table 8.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BC69PAS_SER v.1
20150619
Product data sheet
–
–
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
12 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
Suitability for use in automotive applications —
This NXP
12.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. Unless otherwise agreed in writing, the product is not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
12.3 Disclaimers
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
13 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Translations —
A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13. Contact information
BC69PAS_SER
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2015. All rights reserved.
Product data sheet
Rev. 1 — 19 June 2015
14 of 15
BC69PAS series
NXP Semiconductors
20 V, 2 A PNP medium power transistors
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
9
Quality information . . . . . . . . . . . . . . . . . . . . . .
9
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
10
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
2
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
13
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
13
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
3
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
14
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . .
14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V.
2015.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 June 2015
Document identifier: BC69PAS_SER
