Nexperia-BC847BV-315
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DISCRETE SEMICONDUCTORS
DATA SHEET
BC847BV
NPN general purpose double
transistor
Product data sheet
2001 Sep 10
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
FEATURES
PINNING
•
300 mW total power dissipation
PIN
1, 4
2, 5
6, 3
DESCRIPTION
•
Very small 1.6 mm
×
1.2 mm
×
0.55 mm ultra thin
package
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
•
Excellent coplanarity due to straight leads
•
Low collector capacitance
collector
•
Improved thermal behaviour due to flat leads
•
Reduces number of components as replacement of two
SC-75/SC-89 packaged BISS transistors
•
Reduces required board space
•
Reduces pick and place costs.
handbook, halfpage
6
5
4
6
5
4
TR2
APPLICATIONS
TR1
•
General purpose switching and amplification.
1
2
3
1
2
3
DESCRIPTION
MAM447
Top view
NPN double transistor in a SOT666 plastic package.
PNP complement: BC857BV.
MARKING
TYPE NUMBER
BC847BV
MARKING CODE
Fig.1 Simplified
outline (SOT666) and symbol.
1F
2001 Sep 10
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
open emitter
−
−
−
−
−
−
−
50
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
45
open collector
5
100
200
200
200
+150
150
+150
mA
mA
mA
mW
°
C
I
CM
I
BM
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°
C; note 1
−
65
−
°
C
T
amb
−
65
°
C
Per device
P
tot
total power dissipation
T
amb
≤
25
°
C; note 1
−
300
mW
Note
1. Transistor
mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to ambient
notes 1 and 2
416
K/W
Notes
1. Transistor
mounted on an FR4 printed-circuit board.
2. The
only recommended soldering method is reflow soldering.
2001 Sep 10
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
CHARACTERISTICS
T
amb
= 25
°
C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor
I
CBO
collector-base cut-off current
I
E
= 0; V
CB
= 30 V
−
−
15
5
nA
μ
A
nA
I
E
= 0; V
CB
= 30 V; T
j
= 150
°
C
I
C
= 0; V
EB
= 5 V
−
−
I
EBO
h
FE
emitter-base cut-off current
DC current gain
−
−
100
450
700
100
300
−
I
C
= 2 mA; V
CE
= 5 V
200
580
−
−
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
655
−
mV
mV
mV
mV
pF
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA; note 1
I
C
= 10 mA; I
B
= 0.5 mA
I
E
= I
e
= 0; V
CB
= 10 V; f = 1 MHz
−
−
V
BEsat
C
c
base-emitter saturation voltage
collector capacitance
emitter capacitance
−
755
−
−
1.5
−
C
e
I
C
= i
c
= 0; V
EB
= 500 mV;f = 1 MHz
−
11
−
pF
f
T
transition frequency
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
−
MHz
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
MBH724
300
V
= 5 V
h
CE
FE
200
100
0
10
−
2
−
1
2
3
10
1
10
10
10
I
(mA)
C
Fig.2 DC
current gain; typical values.
2001 Sep 10
4
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
Graphical information BC847BV
MHB971
MHB972
1200
BE
(mV)
1000
600
handbook, halfpage
handbook, halfpage
V
h
(1)
(2)
FE
500
(1)
(2)
800
400
300
200
100
0
600
400
(3)
(3)
200
0
−
1
2
3
−
2
−
1
2
I
3
10
1
10
10
10
10
10
1
10
10
10
(mA)
I
(mA)
C
C
V
CE
= 5 V.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
V
CE
= 5 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
Fig.4 Base-emitter
voltage as a function of
collector current; typical values.
Fig.3 DC
current gain; typical values.
MHB973
MHB974
4
10
1200
BEsat
(mV)
handbook, halfpage
handbook, halfpage
V
V
CEsat
(mV)
1000
(1)
3
800
10
(2)
600
(3)
2
10
400
(1)
200
0
(2)
(3)
10
−
1
2
3
−
1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
I
C
/I
B
= 20.
I
C
/I
B
20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
(3) T
amb
= 150
°
C.
Fig.5 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.6 Base-emitter
saturation voltage as a
function of collector current; typical values.
2001 Sep 10
5
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2001 Sep 10
6
NXP Semiconductors
Product data sheet
NPN general purpose double transistor
BC847BV
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale
⎯
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Sep 10
7
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp
8
Date of release:
2001 Sep 10
Document order number:
9397 750 08589
