Nexperia-BC856SF
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Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
BC856S
65
V
,
1
00 mA PNP/PNP general-purpose transistor
Rev. 02 — 19 February 2009
Product data sheet
1. Product
profile
1.1 General
description
PNP/PNP general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
1.2 Features
I
Low collector capacitance
I
Low collector-emitter saturation voltage
I
Closely matched current gain
I
Reduces number of components and board space
I
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick
reference data
Table 1.
Quick reference data
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
V
CEO
I
C
collector-emitter voltage
open base
collector current
–
–
–
–
−
65
−
100
–
V
–
mA
h
FE
DC current gain
V
CE
=
−
5 V;
I
C
=
−
2 mA
110
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Graphic symbol
6
5
4
6
5
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
4
1
2
3
5
1
2
3
6
collector TR1
sym018
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BC856S
SC-88
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
BC856S
5F*
[1] *
= -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
V
CBO
V
CEO
V
EBO
I
C
collector-base voltage
open emitter
–
–
–
–
–
–
−
80
−
65
−
5
V
collector-emitter voltage
open base
V
emitter-base voltage
collector current
open collector
V
−
100
220
250
mA
mW
mW
[1]
[2]
P
tot
total power dissipation
T
amb
≤
25
°
C
Per device
[1]
[2]
P
tot
total power dissipation
T
amb
≤
25
°
C
–
300
mW
mW
°
C
–
400
T
j
junction temperature
ambient temperature
storage temperature
–
150
T
amb
T
stg
−
65
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
2 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
006aab419
500
tot
P
(mW)
(1)
400
(2)
300
200
100
0
−
75
−
25
25
75
125
175
(
°
C)
T
amb
(1) FR4
PCB, mounting pad for collector 1 cm
2
(2) FR4
PCB, standard footprint
Fig 1.
Per device: Power derating curves SOT363 (SC-88)
6. Thermal
characteristics
Table 6.
Symbol
Per transistor
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
[2]
R
th(j-a)
thermal resistance from
in free air
junction to ambient
–
–
–
–
–
–
568
500
230
K/W
K/W
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
[2]
R
th(j-a)
thermal resistance from
in free air
junction to ambient
–
–
–
–
416
313
K/W
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
3 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
006aab420
3
10
δ
= 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab421
3
10
δ
= 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
0.20
2
10
0.10
0.02
0.05
10
0.01
0
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm
2
Fig 3.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
4 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
I
CBO
collector-bas
e
c
ut-off V
CB
=
−
30 V; I
E
= 0 A
–
–
–
–
−
15
−
5
nA
current
V
CB
=
−
30 V; I
E
= 0 A;
T
j
= 150
°
C
µ
A
I
EBO
emitter-base cut-off
V
EB
=
−
5 V; I
C
= 0 A
–
–
−
100
nA
current
h
FE
DC current gain
V
CE
=
−
5 V; I
C
=
−
2 mA
110
–
–
–
–
V
CEsat
collector-emitter
saturation voltage
I
C
=
−
10 mA;
I
B
=
−
0.5 mA
−
100
mV
[1]
I
C
=
−
100 mA; I
B
=
−
5 mA
–
–
–
−
300
mV
mV
V
BEsat
V
BE
base-emitter
saturation voltage
I
C
=
−
10 mA;
I
B
=
−
0.5 mA
700
–
base-emitter voltage
I
C
=
−
2 mA; V
CE
=
−
5 V
I
C
=
−
10 mA; V
CE
=
−
5 V
−
600
−
650
−
750
−
820
2.5
mV
mV
pF
–
–
–
–
C
c
f
T
collector capacitance
I
E
= i
e
= 0 A; V
CB
=
−
10 V;
f = 1 MHz
transition frequency
I
C
=
−
10 mA; V
CE
=
−
5 V;
100
–
–
MHz
f = 100 MHz
[1] Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02.
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
5 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
006aab429
006aab430
500
−
0.20
I
(mA) =
−
5.0
B
−
4.5
−
3.5
h
FE
I
C
−
4.0
−
3.0
(A)
400
−
0.15
−
2.5
−
1.5
(1)
−
2.0
−
1.0
300
200
100
0
−
0.10
−
0.05
0
(2)
(3)
−
0.5
−
1
2
3
−
10
−
1
−
10
−
10
−
10
0
−
1
−
2
−
3
−
4
V
−
5
(V)
I
(mA)
C
CE
V
CE
=
−
5 V
T
amb
= 25
°
C
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 4.
Per transistor: DC current gain as a function of
collector current; typical values
Fig 5.
Per transistor: Collector current as a function
of collector-emitter voltage; typical values
006aab431
006aab432
−
1.2
−
1.2
V
(V)
V
BE
BEsat
(V)
−
1.0
−
1.0
−
0.8
−
0.6
−
0.4
−
0.2
(1)
(2)
(1)
(2)
−
0.8
−
0.6
−
0.4
−
0.2
(3)
(3)
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
(mA)
I (mA)
C
C
V
CE
=
−
5 V
I
C
/I
B
= 20
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 6.
Per transistor: Base-emitter voltage as a
function of collector current; typical values
Fig 7.
Per transistor: Base-emitter saturation voltage
as a function of collector current; typical
values
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
6 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
006aab433
006aab434
9
−
1
10
V
f
T
(Hz)
CEsat
(V)
−
1
8
−
10
10
(1)
(2)
(3)
−
2
7
−
10
10
−
10
−
1
2
3
−
1
2
−
10
−
1
−
10
−
10
−
10
−
1
−
10
−
10
I
(mA)
I
(mA)
C
C
I
C
/I
B
= 20
V
CE
=
−
5 V; f = 1 MHz; T
amb
= 25
°
C
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 8.
Per transistor: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 9.
Per transistor: Transition frequency as a
function of collector current; typical values
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
7 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
8. Package
outline
2.2
1.8
1.1
0.8
0.45
0.15
6
5
4
2.2 1.35
2.0 1.15
pin 1
index
1
2
3
0.25
0.10
0.3
0.2
0.65
1.3
Dimensions in mm
06-03-16
Fig 10.
Package outline SOT363 (SC-88)
9. Packing
information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000
10000
-135
[2]
[3]
BC856S
SOT363 4
mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115
-125
-165
[1] For
further information and the availability of packing methods, see
Section 13
.
[2] T1:
normal taping
[3] T2:
reverse taping
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
8 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
10. Soldering
2.65
solder lands
0.4 (2
×
)
1.5
2.35
0.6
(4
×
)
0.5
(4
×
)
solder resist
solder paste
0.5
(4
×
)
0.6
(2
×
)
occupied area
0.6
(4
×
)
Dimensions in mm
1.8
sot363_fr
Fig 11.
Reflow soldering footprint SOT363 (SC-88)
1.5
solder lands
solder resist
occupied area
2.5
0.3
4.5
1.5
Dimensions in mm
preferred transport
direction during soldering
1.3
1.3
2.45
5.3
sot363_fw
Fig 12.
Wave soldering footprint SOT363 (SC-88)
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
9 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
11. Revision history
Table 9.
Revision history
Document ID
BC856S_2
Release date
Data sheet status
Change notice
Supersedes
20090219
Product data sheet
–
BC856S_1
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
Section 1.2 “Features”
: adapted
•
Section 4 “Marking”
: updated
•
Section 7 “Characteristics”
: enhanced
•
Section 9 “Packing information”
: added
•
Section 10 “Soldering”
: added
•
Section 12 “Legal information”
: updated
BC856S_1
19990824
Product specification
–
–
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
10 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
12. Legal information
12.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
intellectual property rights infringement and limitation of liabilit
y
,
u
nless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
BC856S_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 19 February 2009
11 of 12
BC856S
NXP Semiconductors
65
V
,
1
00 mA PNP/PNP general-purpose transistor
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics. . . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
8
Packing information. . . . . . . . . . . . . . . . . . . . . .
8
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
3
4
5
6
7
8
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . .
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
11
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
12.1
12.2
12.3
12.4
13
14
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . .
11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 February 2009
Document identifier: BC856S_2
