Nexperia-BC857BM-315
| Part # | Nexperia-BC857BM-315 |
Download  | Nexperia-BC857BM-315 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
BC857M series
PNP general purpose transistors
Product data sheet
2004 Mar 10
Supersedes data of 2003 Jul 15
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
FEATURES
QUICK REFERENCE DATA
SYMBOL
•
Leadless ultra small plastic package
(1 mm
×
0.6 mm
×
0.5 mm)
PARAMETER
MAX. UNIT
V
CEO
I
C
collector-emitter voltage
−
45
V
•
Board space 1.3
×
0.9 mm
collector current (DC)
peak collector current
−
100
−
200
mA
mA
•
Power dissipation comparable to SOT23.
I
CM
APPLICATIONS
PINNING
•
General purpose small signal DC
PIN
1
DESCRIPTION
•
Low and medium frequency AC applications
base
•
Mobile communications, digital (still) cameras, PDAs,
PCMCIA cards.
2
emitter
collector
3
DESCRIPTION
PNP general purpose transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: BC847M series.
3
2
handbook, halfpage
2
1
3
MARKING
1
Bottom view
MAM469
TYPE NUMBER
BC857AM
MARKING CODE
D1
D2
D3
BC857BM
BC857CM
Fig.1 Simplified
outline (SOT883) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BC857AM
BC857BM
BC857CM
−
Leadless ultra small plastic package; 3 solder lands; body
1.0 x 0.6 x 0.5 mm
SOT883
2004 Mar 10
2
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−
50
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−
45
open collector
−
5
−
100
−
200
−
100
mA
mA
mA
I
CM
I
BM
P
tot
total power dissipation
T
amb
≤
25
°
C
note 1
−
−
250
mW
mW
°
C
note 2
430
T
stg
T
j
storage temperature
−
65
−
+150
150
junction temperature
°
C
T
amb
operating ambient temperature
−
65
+150
°
C
Notes
1. Refer
to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
2. Device
mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
thermal resistance from junction to ambient
in free air
note 1
note 2
500
290
K/W
K/W
Notes
1. Refer
to SOT883 standard mounting conditions (footprint), FR4 with 60
μ
m copper strip line.
2. Device
mounted on a FR4 printed-circuit board, single-sided copper, mounting pad for collector 1 cm
2
.
2004 Mar 10
3
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
−
30 V; I
E
= 0
MIN.
MAX.
−
15
UNIT
nA
I
CBO
collector-base cut-off current
−
−
−
V
CB
=
−
30 V; I
E
= 0; T
j
= 150
°
C
V
EB
=
−
5 V; I
C
= 0
−
5
μ
A
I
EBO
h
FE
emitter-base cut-off current
DC current gain
BC857AM
−
100
nA
V
CE
=
−
5 V; I
C
=
−
2 mA
125
220
420
−
600
−
250
475
800
−
750
−
820
−
200
−
400
2.5
BC857BM
BC857CM
V
BE
base-emitter voltage
I
C
=
−
2 mA; V
CE
=
−
5 V
I
C
=
−
10 mA; V
CE
=
−
5 V
mV
mV
mV
mV
pF
V
CEsat
collector-emitter saturation voltage
I
C
=
−
10 mA; I
B
=
−
0.5 mA
I
C
=
−
100 mA; I
B
=
−
5 mA; note 1
−
−
C
c
f
T
collector capacitance
transition frequency
I
E
= i
e
= 0; V
CB
=
−
10 V; f = 1 MHz
−
V
CE
=
−
5 V; I
C
=
−
10 mA;
100
−
MHz
f = 100 MHz
F
noise figure
I
C
=
−
200
μ
A; V
CE
=
−
5 V;
−
10
dB
R
S
= 2 k
Ω
; f = 1 kHz; B = 200 Hz
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
2004 Mar 10
4
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857AM
MLE188
MLE189
500
−
1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
400
−
1000
(1)
(1)
(2)
300
−
800
−
600
−
400
−
200
(2)
200
(3)
(3)
100
0
−
10
−
2
−
1
2
3
−
2
−
1
2
3
−
10
−
1
−
10
−
10
−
10
(mA)
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
I
C
C
V
CE
=
−
5 V.
V
CE
=
−
5 V.
(1) T
amb
= 150
°
C.
(2)
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
T
Fig.3 Base-emitter
voltage as a function of
collector current; typical values.
Fig.2 DC
current gain; typical values.
MLE190
MLE191
4
−
10
−
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−
1000
(1)
3
−
10
(2)
−
800
(3)
−
600
(1)
(3)
2
−
10
(2)
−
400
−
200
−
10
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
(mA)
I
C
C
I
C
/I
B
= 20.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
Fig.4 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter
saturation voltage as a
function of collector current; typical values.
2004 Mar 10
5
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857BM
MLE192
MLE193
1000
−
1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(mV)
800
−
1000
(1)
(2)
600
(1)
−
800
−
600
−
400
−
200
400
(2)
(3)
200
(3)
0
−
10
−
2
−
1
2
3
−
2
−
1
2
3
−
10
−
1
−
10
−
10
−
10
(mA)
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
I
C
C
V
CE
=
−
5 V.
V
CE
=
−
5 V.
(1) T
amb
= 150
°
C.
(2)
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
T
Fig.7 Base-emitter
voltage as a function of
collector current; typical values.
Fig.6 DC
current gain; typical values.
MLE194
MLE195
4
−
10
−
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−
1000
(1)
3
−
10
(2)
−
800
(3)
−
600
(1)
(3)
2
−
10
(2)
−
400
−
200
−
10
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
I
(mA)
C
C
I
C
/I
B
= 20.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
Fig.8 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.9 Base-emitter
saturation voltage as a
function of collector current; typical values.
2004 Mar 10
6
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
GRAPHICAL INFORMATION BC857CM
MLE196
MLE197
1000
−
1200
handbook, halfpage
handbook, halfpage
V
BE
h
FE
(1)
(mV)
800
−
1000
(1)
(2)
600
−
800
−
600
(2)
400
(3)
(3)
200
−
400
−
200
0
−
10
−
1
2
3
−
2
−
1
2
3
−
10
−
1
−
10
−
10
−
10
(mA)
−
10
−
1
−
10
−
10
−
10
(mA)
I
I
C
C
V
CE
=
−
5 V.
V
CE
=
−
5 V.
(1) T
amb
= 150
°
C.
(2)
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
T
Fig.11 Base-emitter
voltage as a function of
collector current; typical values.
Fig.10 DC
current gain; typical values.
MLE198
MLE199
4
−
10
−
1200
handbook, halfpage
handbook, halfpage
V
BEsat
(mV)
V
CEsat
(mV)
−
1000
(1)
3
−
10
(2)
−
800
(3)
−
600
(1)
(3)
2
−
10
(2)
−
400
−
200
−
10
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
I
(mA)
C
C
I
C
/I
B
= 20.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
=
−
55
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3) T
amb
= 150
°
C.
Fig.12 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.13 Base-emitter
saturation voltage as a
function of collector current; typical values.
2004 Mar 10
7
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2004 Mar 10
8
NXP Semiconductors
Product data sheet
PNP general purpose transistors
BC857M series
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale
⎯
NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Mar 10
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/02/pp10
Date of release: 2004 Mar 10
Document order number:
9397 750 12839
