Nexperia-BCV49-135

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Nexperia-BCV49-135
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DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BCV29; BCV49  
NPN Darlington transistors  
Product data sheet  
2004 Dec 06  
Supersedes data of 1999 Apr 08  

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
FEATURES  
PINNING  
•
High current (max. 500 mA)  
•
Low voltage (max. 60 V)  
PIN  
1
DESCRIPTION  
emitter  
collector  
base  
•
High DC current gain (min. 20000).  
2
3
APPLICATIONS  
•
Preamplifier input applications.  
3
2
DESCRIPTION  
NPN small-signal Darlington transistor in a surface mount  
SOT89 plastic package. PNP complements: BCV28 and  
BCV48.  
TR1  
TR2  
1
MARKING  
3
2
1
sym087  
TYPE NUMBER  
BCV29  
MARKING CODE  
EF  
Fig.1 Simplified
 
outline (SOT89) and symbol.  
BCV49  
EG  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
NAME  
DESCRIPTION  
VERSION  
SOT89  
BCV29  
BCV49  
SC-62  
plastic surface mounted package; collector pad for good heat  
transfer; 3 leads  
2004 Dec 06  
2

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
collector-base voltage  
CONDITIONS  
open emitter  
MIN.  
MAX.  
UNIT  
V

CBO  

BCV29  
−
−
40  
V
V
BCV49  
80  
V

CES  

collector-emitter voltage  
BCV29  
V

BE

= 0 V  
−
−
−
−
−
−
−
30  
V
V
V
BCV49  
60  
V

EBO  

I

C  

emitter-base voltage  
collector current (DC)  
peak collector current  
peak base current  
total power dissipation  
storage temperature  
junction temperature  
ambient temperature  
open collector  
10  
500  
1
mA  
A
I

CM  

I

BM  

P

tot  

T

stg  

T

j  

200  
1.3  
+150  
150  
+150  
mA  
W
T

amb

≤
25
°
C; note 1  
−
65  
−
°
C  
°
C  
°
C  
T

amb  

−
65  
Note  
1. Device
 
mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm

2

.  
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.  
THERMAL CHARACTERISTICS  
SYMBOL  
R

th(j-a)  

PARAMETER  
CONDITIONS  
note 1  
VALUE  
96  
UNIT  
K/W  
K/W  
thermal resistance from junction to ambient  
thermal resistance from junction to soldering point  
R

th(j-s)  

16  
Note  
1. Device
 
mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm

2

.  
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.  
2004 Dec 06  
3

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
CHARACTERISTICS  
T

amb

= 25
°
C unless otherwise specified.  
SYMBOL  
I

CBO  

PARAMETER  
CONDITIONS  
MIN. TYP.
 
MAX. UNIT  
collector-base cut-off current  
BCV29  
I

E

= 0 A; V

CB

= 30 V  
−
−
−
−
−
−
100  
100  
100  
nA  
nA  
nA  
BCV49  
I

E

= 0 A; V

CB

= 60 V  
I

C

= 0 A; V

EB

= 10 V  
V

CE

= 5 V; see Fig.2  
I

C

= 1 mA  
I

EBO  

h

FE  

emitter-base cut-off current  
DC current gain  
BCV29  
4000  
−
−
−
−
−
−
−
−
I

C

= 10 mA  
10000  
20000  
4000  
I

C

= 100 mA  
I

C

= 500 mA  
DC current gain  
BCV49  
V

CE

= 5 V; see Fig.2  
I

C

= 1 mA  
2000  
4000  
10000  
2000  
−
−
−
I

C

= 10 mA  
−
−
I

C

= 100 mA  
−
−
I

C

= 500 mA  
−
−
V

CEsat  

V

BEsat  

V

BEon  

f

T  

collector-emitter saturation voltage
 
I

C

= 100 mA; I

B

= 0.1 mA  
−
1
V
base-emitter saturation voltage  
base-emitter on-state voltage  
transition frequency  
I

C

= 100 mA; I

B

= 0.1 mA  
I

C

= 10 mA; V

CE

= 5 V  
−
−
1.5  
1.4  
−
V
−
−
V
I

C

= 30 mA; V

CE

= 5 V; f = 100 MHz
 
−  
220  
MHz  
2004 Dec 06  
4

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
MGD837  
80000  
h
FE  
60000  
40000  
20000  
0
10  
−
1  
2
3
1
10  
10  
10  
I
(mA)  
C
V

CE

= 2 V.  
Fig.2 DC
 
current gain; typical values.  
2004 Dec 06  
5

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
PACKAGE OUTLINE  
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads  
SOT89  
B
A
D
b
p3  
E
H
E
L
p
1
2
3
c
b
p2  
w
M
b
p1  
e
1
e
0
2
4 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1  
p2  
p3  
1
1.6  
1.4  
0.48  
0.35  
0.53  
0.40  
1.8  
1.4  
0.44  
0.23  
4.6  
4.4  
2.6  
2.4  
4.25  
3.75  
1.2  
0.8  
mm  
3.0  
1.5  
0.13  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
JEITA  
04-08-03  
06-03-16  
SOT89  
TO-243  
SC-62  
2004 Dec 06  
6

NXP Semiconductors  
Product data sheet  
NPN Darlington transistors  
BCV29; BCV49  
DATA SHEET STATUS  
DOCUMENT  
STATUS

(1)  

PRODUCT  
STATUS

(2)  

DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please
 
consult the most recently issued document before initiating or completing a design.  
2. The
 
product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
DISCLAIMERS  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General
⎯
Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale
⎯

Right to make changes
⎯
NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
No offer to sell or license
⎯
Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Suitability for use
 
⎯
NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
Export control
⎯
This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Quick reference data
⎯
The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Applications
⎯
Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values
⎯
Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
2004 Dec 06  
7

NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal  
definitions and disclaimers. No changes were made to the technical content, except for package outline  
drawings which were updated to the latest version.  
Contact information  
For additional information please visit:

For sales offices addresses send e-mail to:

© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/06/pp8  
Date of release: 2004 Dec 06  
Document order number:
 
9397 750 13863