Nexperia-BCV65-215
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. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
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the references to Nexperia, as shown below.
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(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
BCV65
NPN/PNP general-purpose transistor
Rev. 4 — 27 July 2010
Product data sheet
1. Product
profile
1.1 General
description
NPN/PNP general-purpose transistor in a small SOT143B Surface-Mounted
Device (SMD) plastic package.
1.2 Features
and benefits
Low current (max. 100 mA)
Low voltage (max. 30 V)
Matched pair
AEC-Q101 qualified
Small SMD plastic package
1.3 Applications
General-purpose switching and amplification
1.4 Quick
reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
Per transistor; for the PNP transistor with negative polarity
V
CEO
I
C
collector-emitter voltage
collector current
open base
–
–
–
–
30
V
–
100
800
mA
h
FE
DC current gain
V
CE
= 5 V; I
C
= 2 mA
75
2. Pinning
information
Table 2.
Pinning
Pin
1, 3
2
Description
collector
Simplified outline
Graphic symbol
1
4
3
common base
common emitter
4
2
4
1
2
3
006aab229
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
–
Description
Version
BCV65
plastic surface-mounted package; 4 leads
SOT143B
4. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
BCV65
97*
[1] *
= -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
Per transistor; for the PNP transistor with negative polarity
V
CBO
V
CEO
I
C
collector-base voltage
collector-emitter voltage
collector current
open emitter
open base
–
–
–
–
–
30
V
30
V
100
200
200
mA
mA
mA
I
CM
peak collector current
peak base current
I
BM
Per device
P
tot
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°
C
–
250
mW
°
C
T
j
–
150
T
amb
T
stg
−
65
−
65
+150
+150
°
C
°
C
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
2 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
6. Thermal
characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max Unit
500 K/W
[1]
R
th(j-a)
thermal resistance from junction
in free air
to ambient
–
–
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB).
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Per transistor; for the PNP transistor with negative polarity
I
CBO
collector-base cut-off
current
V
CB
= 30 V; I
E
= 0 A
–
–
–
–
15
5
nA
V
CB
= 30 V; I
E
= 0 A;
μ
A
T
j
= 150
°
C
h
FE
DC current gain
V
CE
= 5 V; I
C
= 2 mA
75
–
–
800
300
V
CEsat
collector-emitter
saturation voltage
I
C
= 10 mA;
I
B
= 0.5 mA
90
mV
mV
mV
mV
I
C
= 100 mA;
I
B
= 5 mA
–
–
–
250
700
900
650
[1]
[1]
V
BEsat
base-emitter saturation
I
C
= 10 mA;
–
–
voltage
I
B
= 0.5 mA
I
C
= 100 mA;
I
B
= 5 mA
[2]
[2]
V
BE
base-emitter voltage
I
C
= 2 mA; V
CE
= 5 V
580
–
650
–
750
820
mV
mV
I
C
= 10 mA;
V
CE
= 5 V
[1] V
BEsat
decreases by about 1.7 mV/K with increasing temperature.
[2] V
BE
decreases by about 2 mV/K with increasing temperature.
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
3 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
mgt727
mgt728
600
1200
V
BE
h
FE
(mV)
1000
(1)
(2)
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(3)
(3)
−
2
−
1
2
3
−
1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
V
CE
= 5 V
V
CE
= 5 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 1.
TR1 (NPN): DC current gain as a function of
collector current; typical values
Fig 2.
TR1 (NPN): Base-emitter voltage as a function
of collector current; typical values
mgt729
mgt730
4
10
1200
BEsat
V
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−
1
2
3
−
1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
I
C
/I
B
= 20
I
C
/I
B
= 10
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 3.
TR1 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 4.
TR1 (NPN): Base-emitter saturation voltage as
a function of collector current; typical values
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
4 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
mgt715
mgt716
1000
−
1200
BE
V
h
FE
(mV)
−
1000
800
(1)
(2)
−
800
−
600
−
400
−
200
0
600
(1)
400
(3)
(2)
200
0
(3)
−
2
−
1
2
3
−
2
−
1
2
3
−
10
−
10
−
1
−
10
−
10
−
10
I (mA)
C
−
10
−
10
−
1
−
10
−
10
−
10
(mA)
I
C
V
CE
=
−
5 V
V
CE
=
−
5 V
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 5.
TR2 (PNP): DC current gain as a function of
collector current; typical values
Fig 6.
TR2 (PNP): Base-emitter voltage as a function
of collector current; typical values
mgt717
mgt718
4
−
10
−
1200
BEsat
V
(mV)
V
CEsat
−
1000
(mV)
(1)
(2)
3
−
10
−
800
−
600
−
400
−
200
0
(3)
2
−
10
(1)
(3) (2)
−
10
−
1
2
3
−
1
2
3
−
10
−
1
−
10
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
C
(mA)
I
C
(mA)
I
C
/I
B
= 20
I
C
/I
B
= 20
(1) T
amb
= 150
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 150
°
C
Fig 7.
TR2 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8.
TR2 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
5 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
8. Test
information
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package
outline
3.0
2.8
1.1
0.9
1.9
4
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.88
0.78
0.48
0.38
0.15
0.09
1.7
Dimensions in mm
04-11-16
Fig 9.
Package outline SOT143B
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package Description
Packing quantity
3000
-215
10000
BCV65
SOT143B 4
mm pitch, 8 mm tape and reel
-235
[1] For
further information and the availability of packing methods, see
Section 14
.
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
6 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
11. Soldering
3.25
1.9
0.6
(3
×
)
0.5
(3
×
)
solder lands
solder resist
0.7 0.6
(3
×
) (3
×
)
2
solder paste
occupied area
3
0.7 0.6
Dimensions in mm
0.75
0.95
0.9
1
sot143b_fr
Fig 10.
Reflow soldering footprint SOT143B
4.45
2.2
1.2
(3
×
)
1.425
(3
×
)
solder lands
solder resist
occupied area
2.575
4.6
Dimensions in mm
1.425
preferred transport direction during soldering
1
1.2
sot143b_fw
Fig 11.
Wave soldering footprint SOT143B
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
7 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
12. Revision history
Table 9.
Revision history
Document ID
BCV65 v.4
Release date
Data sheet status
Change notice
Supersedes
20100727
Product data sheet
–
BCV65_3
Modifications:
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
Section 1 “Product profile”
: amended
•
Section 3 “Ordering information”
: added
•
Section 4 “Marking”
: updated
•
Figure 1
,
2
,
3
,
4
,
5
,
6
,
7
and
8
: added
•
Figure 9
: superseded by minimized package outline drawing
•
Section 8 “
T
e
st information”
: added
•
Section 10 “Packing information”
: added
•
Section 11 “Soldering”
: added
•
Section 13 “Legal information”
: updated
BCV65_3
19990422
Product specification
–
–
BCV65_CNV_2
–
BCV65_CNV_2
19970422
Product specification
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
8 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
malfunction of an NXP Semiconductors product can reasonably be expected
13.2 Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
Product specification —
The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
13.3 Disclaimers
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Limited warranty and liability —
Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale —
NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license —
Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control —
This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
BCV65
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
9 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
BCV65
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 4 — 27 July 2010
10 of 11
BCV65
NXP Semiconductors
NPN/PNP general-purpose transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . .
1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . .
3
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
6
Quality information . . . . . . . . . . . . . . . . . . . . . .
6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
6
Packing information
. . . . . . . . . . . . . . . . . . . . .
6
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
8
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . .
9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .
9
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
10
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . .
10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2010.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 July 2010
Document identifier: BCV65
