Nexperia-BF620-115
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BF620; BF622
NPN high-voltage transistors
Product data sheet
2004 Dec 14
Supersedes data of 1999 Apr 21
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
FEATURES
PINNING
•
Low current (max. 50 mA)
•
High voltage (max. 300 V).
PIN
1
DESCRIPTION
emitter
collector
base
2
APPLICATIONS
3
•
Video output stages.
DESCRIPTION
NPN high-voltage transistor in a SOT89 plastic package.
PNP complements: BF621 and BF623.
2
1
MARKING
3
TYPE NUMBER
BF620
MARKING CODE
3
2
1
DC
DA
sym042
BF622
Fig.1 Simplified
outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BF620
BF622
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 14
2
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
V
CBO
BF620
−
−
300
V
BF622
250
V
V
CEO
collector-emitter voltage
BF620
open base
−
−
−
−
−
−
300
250
5
V
BF622
V
V
EBO
I
C
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open collector
V
50
mA
mA
mA
I
CM
I
BM
P
tot
100
50
T
amb
≤
25
°
C
note 1
−
−
−
0.5
W
W
W
°
C
°
C
°
C
note 2
0.8
note 3
1.1
T
stg
T
j
storage temperature
junction temperature
ambient temperature
−
65
−
+150
150
+150
T
amb
−
65
Notes
1. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
2004 Dec 14
3
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
006aaa238
1600
P
tot
(mW)
1200
800
400
0
(1)
(2)
(3)
−
75
−
25
25
75
125
T
175
(
°
C)
amb
(1) FR4
PCB; 6 cm
2
mounting pad for collector.
(2) FR4
PCB; 1 cm
2
mounting pad for collector.
(3) FR4
PCB; standard footprint.
Fig.2 Power
derating curves.
2004 Dec 14
4
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
PARAMETER
CONDITIONS
in free air
VALUE
UNIT
thermal resistance from junction to
ambient
note 1
note 2
note 3
250
156
113
30
K/W
K/W
K/W
K/W
R
th(j-s)
thermal resistance from junction to
soldering point
Notes
1. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm
2
.
3. Device
mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm
2
.
006aaa235
3
10
Z
th
(1)
(3)
(K/W)
(2)
(4)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; standard footprint.
(1)
δ
= 1.
(3)
δ
= 0.5.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
(2)
δ
= 0.75.
(4)
δ
= 0.33.
Fig.3 Transient
thermal impedance as a function of pulse time; typical values.
2004 Dec 14
5
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
006aaa236
3
10
Z
th
(K/W)
(1)
(2)
2
10
(3)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm
2
.
(1)
δ
= 1.
(3)
δ
= 0.5.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
(2)
δ
= 0.75.
(4)
δ
= 0.33.
Fig.4 Transient
thermal impedance as a function of pulse time; typical values.
006aaa237
3
10
Z
th
(K/W)
(1)
(3)
2
10
(2)
(4)
(5)
(6)
(7)
10
(8)
(9)
(10)
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm
2
.
(1)
δ
= 1.
(3)
δ
= 0.5.
(5)
δ
= 0.2.
(6)
δ
= 0.1.
(7)
δ
= 0.05.
(8)
δ
= 0.02.
(9)
δ
= 0.01.
(10)
δ
= 0.
(2)
δ
= 0.75.
(4)
δ
= 0.33.
Fig.5 Transient
thermal impedance as a function of pulse time; typical values.
6
2004 Dec 14
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
I
E
= 0 A; V
CB
= 200 V
MIN.
MAX.
10
UNIT
nA
I
CBO
collector-base cut-off current
−
−
−
I
E
= 0 A; V
CB
= 200 V; T
j
= 150
°
C
I
C
= 0 A; V
EB
= 5 V
10
50
−
µ
A
I
EBO
h
FE
V
CEsat
C
re
emitter-base cut-off current
DC current gain
nA
I
C
= 25 mA; V
CE
= 20 V
50
−
collector-emitter saturation voltage
I
C
= 30 mA; I
B
= 5 mA
600
1.6
−
mV
pF
feedback capacitance
transition frequency
I
C
= i
c
= 0 A; V
CE
= 30 V; f = 1 MHz
−
f
T
I
C
=
−
10 mA; V
CE
= 10 V; f = 100 MHz
60
MHz
2004 Dec 14
7
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
PACKAGE OUTLINE
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
04-08-03
06-03-16
SOT89
TO-243
SC-62
2004 Dec 14
8
NXP Semiconductors
Product data sheet
NPN high-voltage transistors
BF620; BF622
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Dec 14
9
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/04/pp10
Date of release: 2004 Dec 14
Document order number:
9397 750 13867
