Nexperia-BFT92W-115
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DISCRETE SEMICONDUCTORS
DATA SHEET
BFT92
PNP 5 GHz wideband transistor
November 1992
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
DESCRIPTION
PINNING
PIN
PNP transistor in a plastic SOT23
envelope.
DESCRIPTION
Code: W1p
base
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
1
2
3
page
3
emitter
collector
1
2
Top view
MSB003
Fig.1 SOT23.
NPN complements are BFR92 and
BFR92A.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
TY
P
.
M
AX. UNIT
V
CBO
V
CEO
I
C
open emitter
open base
−
−
20
−
15
−
25
300
−
V
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
−
V
−
mA
mW
GHz
pF
P
tot
f
T
up to T
s
= 95
°
C; note 1
−
I
C
=
−
14 mA; V
CE
=
−
10 V; f = 500 MHz
I
C
=
−
2 mA; V
CE
=
−
10 V; f = 1 MHz
5
C
re
0.7
18
−
G
UM
maximum unilateral power gain
I
C
=
−
14 mA; V
CE
=
−
10 V;
f = 500 MHz; T
amb
= 25
°
C
−
dB
F
noise figure
I
C
=
−
5 mA; V
CE
=
−
10 V; f = 500 MHz;
T
amb
= 25
°
C
2.5
−
−
dB
dB
d
im
intermodulation distortion
I
C
=
−
14 mA; V
CE
=
−
10 V; R
L
= 75
Ω
;
V
o
= 150 mV; T
amb
= 25
°
C;
f
(p
+
q-r)
= 493.25 MHz
−
60
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
2
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
V
CBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−
20
UNIT
−
−
−
−
−
−
V
V
V
V
CEO
V
EBO
I
C
collector-emitter voltage
emitter-base voltage
DC collector current
peak collector current
total power dissipation
storage temperature
junction temperature
open base
−
15
−
2
open collector
−
25
−
35
300
150
175
mA
mA
mW
°
C
I
CM
P
tot
T
stg
T
j
f
>
1 MHz
up to T
s
= 95
°
C; note 1
−
65
−
°
C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
up to T
s
= 95
°
C; note 1
260 K/W
Note
1. T
s
is the temperature at the soldering point of the collector tab.
November 1992
3
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−
10 V;
MIN. TY
P
.
M
AX.
UNIT
I
CBO
h
FE
f
T
−
−
−
50
−
nA
I
C
=
−
14 mA; V
CE
=
−
10 V
20
−
50
5
transition frequency
I
C
=
−
14 mA; V
CE
=
−
10 V;
−
GHz
f = 500 MHz
C
c
collector capacitance
emitter capacitance
feedback capacitance
I
E
= i
e
= 0; V
CB
=
−
10 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−
0.5 V; f = 1 MHz
I
C
=
−
2 mA; V
CE
=
−
10 V; f = 1 MHz
−
−
−
−
0.75
0.8
0.7
18
−
−
−
−
pF
pF
pF
dB
C
e
C
re
G
UM
maximum unilateral power gain
(note 1)
I
C
=
−
14 mA; V
CE
=
−
10 V;
f = 500 MHz; T
amb
= 25
°
C
F
noise figure
I
C
=
−
5 mA; V
CE
=
−
10 V;
f = 500 MHz; T
amb
= 25
°
C
−
−
2.5
−
−
dB
V
o
output voltage
note 2
150
mV
Notes
1. G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
2
S
21
2
————————————————————
–
–
G
UM
=
10 log
dB.
2
1
–
S
11
1
–
S
22
2. d
im
=
−
60 dB (DIN 45004B); I
C
=
−
14 mA; V
CE
=
−
10 V; R
L
= 75
Ω
;
V
p
= V
o
at d
im
=
−
60 dB; f
p
= 495.25 MHz;
V
q
= V
o
−
6 dB; f
q
= 503.25 MHz;
V
r
= V
o
−
6 dB; f
r
= 505.25 MHz;
measured at f
(p
+
q-r)
= 493.25 MHz.
November 1992
4
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
MEA347
100
24 V
handbook, halfpage
handbook, halfpage
h
FE
820
Ω
L3
390
Ω
3.9 k
Ω
75
50
25
300
Ω
680 pF
680 pF
L2
75
Ω
L1
680 pF
75
Ω
DUT
16
Ω
MEA919
0
0
10
20
30
–I (mA)
C
L2 = L3 = 5
µ
H Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire;
winding pitch 1 mm; internal diameter 4 mm.
V
CE
=
−
10 V; T
j
= 25
°
C.
Fig.2 Intermodulation
distortion test circuit.
Fig.3 DC
current gain as a function of collector
current.
MEA920
MEA344
1
6
handbook, halfpage
handbook, halfpage
C
c
(pF)
f
T
0.8
(GHz)
4
0.6
0.4
2
0
0.2
0
20
0
10
0
10
20
30
–I (mA)
–V
(V)
CB
C
I
E
= i
e
= 0; f = 1 MHz; T
j
= 25
°
C.
V
CE
=
−
10 V;
f = 500 MHz; T
j
= 25
°
C.
Fig.4 Collector
capacitance as a function of
collector-base voltage.
Fig.5 Transition
frequency as a function of
collector current.
November 1992
5
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
MEA921
MEA465
6
5
handbook, halfpage
handbook, halfpage
F
(dB)
5
F
(dB)
4
4
3
2
3
2
1
0
1
0
–1
f (GHz)
0
5
10
15
20
25
(mA)
10
1
10
I
C
V
CE
=
−
10 V;
Z
s
= opt.; f = 500 MHz; T
amb
= 25
°
C.
I
c
=
−
2 mA; V
CE
=
−
10 V; Z
s
= opt.; T
amb
= 25
°
C.
Fig.7 Minimum
noise figure as a function of
frequency.
Fig.6 Minimum
noise figure as a function of
collector current.
November 1992
6
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w
M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
November 1992
7
Philips Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
November 1992
8
