Nexperia-BSP220-115
| Part # | Nexperia-BSP220-115 |
Download  | Nexperia-BSP220-115 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
DISCRETE SEMICONDUCTORS
DATA SHEET
BSP220
P-channel enhancement mode
vertical D-MOS transistor
April 1995
Product specification
File under Discrete Semiconductors, SC13b
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
FEATURES
QUICK REFERENCE DATA
•
Low R
DS(on)
SYMBOL
PARAMETER
CONDITIONS
MAX. UNIT
•
Direct interface to C-MOS, TTL,
etc.
−
V
DS
−
I
D
drain-source voltage
drain current
200
225
12
V
DC value
mA
Ω
•
High-speed switching
R
DS(on)
drain-source on-resistance
−
I
D
= 200 mA
−
V
GS
= 10 V
•
No secondary breakdown.
−
V
GS(th)
gate-source threshold
voltage
2.8
V
DESCRIPTION
P-channel enhancement mode
vertical D-MOS transistor in a
miniature SOT223 envelope and
intended for use in relay, high-speed
and line transformer drivers.
PIN CONFIGURATION
handbook, halfpage
4
d
PINNING – SOT223
PIN
DESCRIPTION
g
1
2
3
4
gate
drain
1
2
3
s
source
drain
Top view
MAM121
Fig.1 Simplified
outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
drain-source voltage
CONDITIONS
MIN. MAX. UNIT
−
V
DS
±
V
GSO
−
I
D
−
200
20
V
gate-source voltage
drain current
open drain
DC value
−
V
−
225
600
1.5
mA
mA
W
−
I
DM
P
tot
drain current
peak value
−
total power dissipation
storage temperature range
junction temperature
up to T
amb
= 25
°
C (note 1)
−
T
stg
T
j
−
65
−
150
150
°
C
°
C
Note
1. Device
mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm
2
.
THERMAL RESISTANCE
SYMBOL
PARAMETER
VALUE
83.3
UNIT
K/W
R
th j-a
from junction to ambient (note 1)
Note
1. Device
mounted on an epoxy printed-circuit board 40 x 40 x 1.5 mm; mounting pad for the drain lead minimum 6 cm
2
.
April 1995
3
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
−
I
D
= 10
µ
A
GS
= 0
MIN. TY
P
.
M
AX. UNIT
−
V
(BR)DSS
drain-source breakdown voltage
200
−
−
V
V
−
I
DSS
±
I
GSS
−
V
GS(th)
R
DS(on)
Y
fs
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
drain-source on-resistance
transfer admittance
−
V
DS
= 160 V
V
GS
= 0
−
−
1
µ
A
nA
V
±
V
GS
= 20 V
V
DS
= 0
−
−
100
2.8
12
−
−
I
D
= 1 mA
V
GS
= V
DS
0.8
−
−
−
I
D
= 200 mA
−
V
GS
= 10 V
10
Ω
−
I
D
= 200 mA
−
V
DS
= 25 V
100 200
mS
pF
C
iss
input capacitance
−
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
−
−
−
65
20
6
90
C
oss
output capacitance
−
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
30
15
pF
pF
C
rss
feedback capacitance
−
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Switching times (see Figs
2
and
3
)
t
on
turn-on time
−
I
D
= 250 mA
−
V
DD
= 50 V
−
V
GS
= 0 to 10 V
−
−
5
20
30
ns
ns
t
off
turn-off time
−
I
D
= 250 mA
−
V
DD
= 50 V
20
−
V
GS
= 0 to 10 V
April 1995
4
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
handbook, halfpage
V
=
−
50 V
DD
handbook, halfpage
INPUT
10 %
90 %
10 %
0 V
I
OUTPUT
D
−
10 V
50
Ω
90 %
MBB689
t
t
on
off
MBB690
Fig.2 Switching
time test circuit.
Fig.3 Input
and output waveforms.
MBB693
MDA706
2
−
1
handbook,
P
handbook, halfpage
V
=
−
10 V
−
6 V
GS
I
tot
(W)
D
(A)
1.6
−
0.8
1.2
0.8
−
0.6
−
0.4
−
5 V
−
4 V
0.4
0
−
0.2
−
3 V
−
15
0
0
0
50
100
150
200
(
°
C)
−
5
−
10
−
20
V
−
25
(V)
T
amb
DS
Fig.4 Power
derating curve.
Fig.5 Typical
output characteristics; T
j
= 25
°
C.
April 1995
5
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
MDA707
MDA708
3
−
10
−
1
handbook, halfpage
handbook, halfpage
V
=
−
10 V
−
5 V
GS
I
D
(A)
I
−
0.8
D
(mA)
−
4 V
−
0.6
−
0.4
2
−
10
−
0.2
0
−
10
8
12
16
20
24
R
28
(
Ω
)
0
−
2
−
4
−
6
−
8
V
−
10
(V)
GS
DSon
Fig.6 Typical
transfer characteristic;
−
V
DS
= 10 V;
T
j
= 25
°
C.
Fig.7 Typical
on-resistance as a function of drain
current; T
j
= 25
°
C.
MDA734
MDA710
160
2.5
handbook, halfpage
handbook, halfpage
C
k
(pF)
2
120
80
1.5
1
C
iss
40
0.5
0
C
oss
C
rss
0
0
−
5
−
10
−
15
−
20
V
−
25
(V)
−
50
0
50
100
150
T (
°
C)
j
DS
Fig.9 Temperature
coefficient of drain-source
on-resistance;
R
DS
(
on
)
at T
j
Fig.8 Typical
capacitances as a function of
drain-source voltage; V
GS
= 0; f = 1 MHz;
T
j
= 25
°
C.
———————————————-
k
=
;
R
DS
(
on
)
at 25
°
C
typical R
DS(on)
at
−
200 mA/
−
10 V.
April 1995
6
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
MDA711
1.1
handbook, halfpage
k
1
0.9
0.8
0.7
−
50
0
50
100
150
T (
°
C)
j
Fig.10 Temperature
coefficient of gate-source
threshold voltage;
V
GS
(
th
)
at T
j
——————————————–
k
=
;
V
GS
(
th
)
at 25
°
C
typical -V
GS(th)
at -1 mA.
April 1995
7
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 4 leads
SOT223
D
B
E
A
X
c
y
H
v
M
A
E
b
1
4
Q
A
A
1
L
1
2
3
p
e
b
p
w
M
B
detail X
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
A
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
1
E
1.8
1.5
0.10 0.80
0.01 0.60
3.1
2.9
0.32
0.22
6.7
6.3
3.7
3.3
7.3
6.7
1.1
0.7
0.95
0.85
mm
4.6
2.3
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
96-11-11
97-02-28
SOT223
April 1995
8
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
9
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
NOTES
April 1995
10
Philips Semiconductors
Product specification
P-channel enhancement mode vertical
D-MOS transistor
BSP220
NOTES
April 1995
11
Philips Semiconductors – a worldwide company
Argentina:
see South America
Netherlands:
Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
Australia:
34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
New Zealand:
2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Austria:
Computerstr. 6, A-1101 WIEN, P.O. Box 213,
Tel. +43 1 60 101, Fax. +43 1 60 101 1210
Norway:
Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Belarus:
Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Philippines:
Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Belgium:
see The Netherlands
Brazil:
see South America
Poland:
Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Bulgaria:
Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Portugal:
see Spain
Romania:
see Italy
Canada:
PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
Russia:
Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
China/Hong Kong:
501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Singapore:
Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. +65 350 2538, Fax. +65 251 6500
Colombia:
see South America
Czech Republic:
see Austria
Slovakia:
see Austria
Slovenia:
see Italy
Denmark:
Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
South Africa:
S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
Finland:
Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
South America:
Rua do Rocio 220, 5th floor, Suite 51,
04552-903 São Paulo, SÃO PAULO – SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 829 1849
France:
4 Rue du Port-aux-Vins, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Spain:
Balmes 22, 08007 BARCELONA,
Tel. +34 3 301 6312, Fax. +34 3 301 4107
Germany:
Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Sweden:
Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 632 2000, Fax. +46 8 632 2745
Greece:
No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Switzerland:
Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2686, Fax. +41 1 481 7730
Hungary:
see Austria
India:
Philips INDIA Ltd, Shivsagar Estate, A Block, Dr. Annie Besant Rd.
Worli, MUMBAI 400 018, Tel. +91 22 4938 541, Fax. +91 22 4938 722
Taiwan:
Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Indonesia:
see Singapore
Thailand:
PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Ireland:
Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel:
RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Turkey:
Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Italy:
PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Ukraine
: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
Japan:
Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108,
Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
United Kingdom:
Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
Korea:
Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
United States:
811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Malaysia:
No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Uruguay:
see South America
Vietnam:
see Singapore
Mexico:
5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Yugoslavia:
PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
Middle East:
see Italy
For all other countries apply to:
Philips Semiconductors, Marketing & Sales Communications,
Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
© Philips Electronics N.V. 1997
SCA54
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
137107/00/01/pp12
Date of release: April 1995
Document order number:
9397 750 02482
