Nexperia-BSS138PW-115

Part #Nexperia-BSS138PW-115
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Nexperia-BSS138PW-115
BSS138PW  
60
V
,
3
20 mA N-channel Trench MOSFET  
Rev. 1 — 2 November 2010  
Product data sheet  
1. Product
 
profile  
1.1 General
 
description  
N-channel enhancement mode Field-Effect Transistor (FET) in a very small  
SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using  
Trench MOSFET technology.  
1.2 Features
 
and benefits  
„
Logic-level compatible  
„
Very fast switching  
„
Trench MOSFET technology  
„
AEC-Q101 qualified  
1.3 Applications  
„
Relay driver  
„
High-speed line driver  
„
Low-side loadswitch  
„
Switching circuits  
1.4 Quick
 
reference data  
Table 1.  
Quick reference data  
Symbol Parameter  
Conditions  
T

amb

= 25
°
C  
T

amb

= 25
°
C  
Min  
Typ  
Max  
60  
Unit  
V
V

DS  

V

GS  

I

D  

drain-source voltage  
–
–
–
–
–
–
gate-source voltage  
drain current  
20  
V
[1]  
[2]  
T

amb

= 25
°
C;  
V

GS

= 10 V  
320  
mA  
R

DSon  

drain-source on-state  
resistance  
T

j

= 25
°
C;  
–
0.9  
1.6  
Ω
V

GS

= 10 V;  
I

D

= 300 mA  
[1] Device
 
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad  
for drain 1 cm

2

.  
[2] Pulse
 
test: t

p

≤
300
μ
s;
δ ≤
0.01.  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
2. Pinning
 
information  
Table 2.  
Pinning  
Pin  
1
Symbol  
Description  
gate  
Simplified outline  
Graphic symbol  
G
S
D
D
3
2
source  
drain  
3
G
1
2
mbb076  
S
3. Ordering
 
information  
Table 3.  
Ordering information  
Type number
 
Package  
Name  
Description  
Version  
BSS138PW  
SC-70  
plastic surface-mounted package; 3 leads  
SOT323  
4. Marking  
Table 4.  
Marking codes  
Type number  
Marking code

[1]  

BSS138PW  
XJ*  
[1] *
 
= placeholder for manufacturing site code  
5. Limiting
 
values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
T

amb

= 25
°
C  
T

amb

= 25
°
C  
V

GS

= 10 V  
Min  
Max  
60  
20  
Unit  
V
V

DS  

V

GS  

I

D  

drain-source voltage  
–
–
gate-source voltage  
drain current  
V
[1]  
T

amb

= 25
°
C  
T

amb

= 100
°
C  
–
–
–
320  
200  
1.2  
mA  
mA  
A
I

DM  

peak drain current  
T

amb

= 25
°
C;  
single pulse; t

p

≤
10
μ
s  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
2 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
Table 5.  
Limiting values
…continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
260  
Unit  
mW  
mW  
mW  
°
C  
[2]  
[1]  
P

tot  

total power dissipation  
T

amb

= 25
°
C  
–
–
–
310  
T

sp

= 25
°
C  
830  
T

j  

junction temperature  
ambient temperature  
storage temperature  
150  
T

amb  

T

stg  

−
55  
−
65  
+150  
+150  
°
C  
°
C  
Source-drain diode  
I

S

source current  
[1]  
T

amb

= 25
°
C  
–
280  
mA  
[1] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

2

.  
[2] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
017aaa001  
017aaa002  
120  
120  
P
der  
I
der  
(%)  
(%)  
80  
80  
40  
40  
0
−
75  
0
−
75  
−
25  
25  
75  
125  
175  
(
°
C)  
−
25  
25  
75  
125  
T
amb  
175  
(
°
C)  
T
amb  
P

tot  

I

D  

———————–  
——————-  
P

der  

=
×
100
%
 
I

der  

=
×
100
%  
P

tot
(
25
°
C
)  

I

D
(
25
°
C
)  

Fig 1.
 
Normalized total power dissipation as a  
function of ambient temperature  
Fig 2.
 
Normalized continuous drain current as a  
function of ambient temperature  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
3 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
017aaa121  
10  
I
D
(A)  
Limit R  
= V
 
/I  
DS D  
DSon  
1
(1)  
(2)  
−
1  
10  
10  
10  
(3)  
(4)  
(5)  
(6)  
−
2  
−
3  
−
1  
2
10  
1
10  
10  
V
DS  
(V)  
I

DM

= single pulse  
(1) t

p

= 100
μ
s  
(2) t

p

= 1 ms  
(3) t

p

= 10 ms  
(4) t

p

= 100 ms  
(5) DC;
 
T

sp

= 25
°
C  
(6) DC;
 
T

amb

= 25
°
C; drain mounting pad 1 cm

2  

Fig 3.
 
Safe operating area; junction to ambient; continuous and peak drain currents as a function of  
drain-source voltage  
6. Thermal
 
characteristics  
Table 6.  
Symbol  
R

th(j-a)  

Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
415  
350  
–
Max Unit  
[1]  
[2]  
thermal resistance from  
junction to ambient  
in free air  
–
–
–
480  
400  
150  
K/W  
K/W  
K/W  
R

th(j-sp)  

thermal resistance from  
junction to solder point  
[1] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Device
 
mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

2

.  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
4 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
017aaa028  
3
10  
duty cycle = 1  
0.75  
Z
th(j-a)  
(K/W)  
0.5  
0.33  
0.2  
2
10  
0.25  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
−
3  
−
2  
−
1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, standard footprint  
Fig 4.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
017aaa029  
3
10  
duty cycle = 1  
Z
th(j-a)  
(K/W)  
0.75  
0.5  
0.33  
0.2  
2
0.25  
10  
0.1  
0.05  
0.02  
0.01  
0
10  
1
10  
−
3  
−
2  
−
1  
2
3
10  
10  
1
10  
10  
10  
t
p
(s)  
FR4 PCB, mounting pad for drain 1 cm

2  

Fig 5.
 
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
5 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
7. Characteristics  
Table 7.  
Characteristics  
T

j

= 25
°
C unless otherwise specified.  
Symbol Parameter  
Static characteristics  
Conditions  
Min  
Typ  
Max Unit  
V

(BR)DSS  

V

GS(th)  

I

DSS  

drain-source breakdown
 
I

D

= 10
μ
A; V

GS

= 0 V  
60  
–
–
V
V
voltage  
gate-source threshold  
voltage  
I

D

= 250
μ
A; V

DS

= V

GS  

0.9  
1.2  
1.5  
drain leakage current  
V

DS

= 60 V; V

GS

= 0 V  
T

j

= 25
°
C  
–
–
–
–
–
–
1
μ
A  
μ
A  
nA  
T

j

= 150
°
C  
10  
100  
I

GSS  

gate leakage current  
V

GS

= 20
 
V; V

DS

= 0 V  
[1]  
[1]  
R

DSon  

drain-source on-state  
resistance  
V

GS

= 5 V; I

D

= 50 mA  
V

GS

= 10 V; I

D

= 300 mA  
V

DS

= 10 V; I

D

= 200 mA  
–
–
–
1
2
Ω
0.9  
700  
1.6  
–
Ω
g

fs  

forward  
mS  
transconductance  
Dynamic characteristics  
Q

G(tot)  

Q

GS  

Q

GD  

C

iss  

total gate charge  
gate-source charge  
gate-drain charge  
input capacitance  
output capacitance  
I

D

= 300 mA;  
V

DS

= 30 V;  
V

GS

= 4.5 V  
–
–
–
–
–
–
0.72 0.8  
nC  
nC  
nC  
pF  
pF  
pF  
0.14  
0.24  
38  
–
–
V

GS

= 0 V; V

DS

= 10 V;  
f = 1 MHz  
50  
–
C

oss  

C

rss  

7
reverse transfer  
capacitance  
4
–
t

d(on)  

t

r  

t

d(off)  

t

f  

turn-on delay time  
rise time  
V

DS

= 50 V;  
R

L

= 250
Ω
;  
V

GS

= 10 V;  
R

G

= 6
Ω  
–
–
–
–
2
3
9
4
6
–
ns  
ns  
ns  
ns  
turn-off delay time  
fall time  
20  
–
Source-drain diode  
V

SD  

source-drain voltage  
I

S

= 115 mA; V

GS

= 0 V  
0.47 0.75 1.1  
V
[1] Pulse
 
test: t

p

≤
300
μ
s;
δ ≤
0.01.  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
6 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
017aaa112  
017aaa113  
−
3  
−
4  
−
5  
−
6  
1.0  
10  
V
GS  
= 3.5 V  
3.0 V  
2.75 V  
I
D
(A)  
I
D
(A)  
0.8  
2.5 V  
10  
10  
10  
(1)  
(2)  
(3)  
0.6  
0.4  
0.2  
0.0  
2.25 V  
2.0 V  
0.0  
1.0  
2.0  
3.0  
4.0  
0.0  
0.5  
1.0  
1.5  
2.0  
V
DS  
(V)  
V
(V)  
GS  
T

amb

= 25
°
C  
T

amb

= 25
°
C; V

DS

= 5 V  
(1) minimum
 
values  
(2) typical
 
values  
(3) maximum
 
values  
Fig 6.
 
Output characteristics: drain current as a  
function of drain-source voltage; typical  
values  
Fig 7.
 
Sub-threshold drain current as a function of  
gate-source voltage  
017aaa114  
017aaa115  
5.0  
6.0  
R
DSon  
(
Ω
)  
(1)  
(2)  
R
DSon  
(
Ω
)  
4.0  
3.0  
2.0  
1.0  
0.0  
4.0  
2.0  
0.0  
(1)  
(2)  
(3)  
(4)  
(5)  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
0.0  
2.0  
4.0  
6.0  
8.0  
V
GS  
10.0  
(V)  
I
(A)  
D
T

amb

= 25
°
C  
(1) V

GS

= 2.0 V  
(2)

GS

= 2.5 V  
I

D

= 300 mA  
(1) T

amb

= 150
°
C  
(2)

amb

= 25
°
C  
V
T
(3) V

GS

= 3.0 V  
(4) V

GS

= 3.5 V  
(5)  
V

GS

= 10 V  
Fig 8.
 
Drain-source on-state resistance as a function  
of drain current; typical values  
Fig 9.
 
Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
7 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
017aaa116  
017aaa022  
0.8  
2.4  
1.8  
1.2  
0.6  
0.0  
I
a
D
(A)  
(1)  
(2)  
0.6  
0.4  
0.2  
0.0  
(2)  
(1)  
0.0  
1.0  
2.0  
3.0  
−
60  
0
60  
120  
180  
(
°
C)  
V
(V)  
T
amb  
GS  
V

DS

> I

D

×
R

DSon  

R

DSon  

a
=  
—————————–  
R

DSon
(
25
°
C
)  

(1) T

amb

= 25
°
C  
(2) T

amb

= 150
°
C  
Fig 10.
 
Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 11.
 
Normalized drain-source on-state resistance  
as a function of ambient temperature; typical  
values  
017aaa117  
017aaa118  
2
2.0  
10  
V
GS(th)  
(V)  
(1)  
C
(pF)  
(1)  
1.5  
1.0  
0.5  
0.0  
(2)  
(3)  
(2)  
10  
(3)  
1
10  
−
1  
2
−
60  
0
60  
120  
180  
(
°
C)  
1
10  
10  
T
amb  
V
DS  
(V)  
I

D

= 0.25 mA; V

DS

= V

GS  

f = 1 MHz; V

GS

= 0 V  
(1) C

iss  

(1) maximum
 
values  
(2) typical
 
values  
(2) C

oss  

(3) C

rss  

(3) minimum
 
values  
Fig 12.
 
Gate-source threshold voltage as a function of  
ambient temperature  
Fig 13.
 
Input, output and reverse transfer  
capacitances as a function of drain-source  
voltage; typical values  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
8 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
017aaa119  
5.0  
V
GS  
(V)  
4.0  
V
DS  
I
D
3.0  
2.0  
1.0  
0.0  
V
GS(pl)  
V
V
GS(th)  
GS  
Q
Q
GS2  
GS1  
Q
Q
GD  
GS  
Q
G(tot)  
0.0  
0.2  
0.4  
0.6  
0.8  
Q
G
(nC)  
003aaa508  
I

D

= 300 mA; V

DS

= 30 V; T

amb

= 25
°
C  
Fig 14.
 
Gate-source voltage as a function of gate  
charge; typical values  
Fig 15.
 
Gate charge waveform definitions  
017aaa120  
1.2  
I
S
(A)  
0.8  
(1)  
(2)  
0.4  
0.0  
0.0  
0.4  
0.8  
1.2  
V
SD  
(V)  
V

GS

= 0 V  
(1) T

amb

= 150
°
C  
(2) T

amb

= 25
°
C  
Fig 16.
 
Source current as a function of source-drain voltage; typical values  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
9 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
8. Test
 
information  
t
t
1
2
P
duty cycle
δ
=  
t
2
t
1
t
006aaa812  
Fig 17.
 
Duty cycle definition  
8.1 Quality
 
information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is  
suitable for use in automotive applications.  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
10 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
9. Package
 
outline  
Plastic surface-mounted package; 3 leads  
SOT323  
D
B
E
A
X
H
y
v
M  
A
E
3
Q
A
A
1
c
1
2
L
p
e
b
w
M
B  
1
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
max  
A
UNIT  
b
c
D
E
e
e
H
E
L
Q
v
w
p
p
1
1.1  
0.8  
0.4  
0.3  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.23  
0.13  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
04-11-04  
06-03-16  
SOT323  
SC-70  
Fig 18.
 
Package outline SOT323 (SC-70)  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
11 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
10. Soldering  
2.65  
1.85  
1.325  
solder lands  
solder resist  
2
3
0.6  
(3
×
)  
solder paste  
1.3  
2.35  
occupied area  
0.5  
(3
×
)  
1
Dimensions in mm  
0.55  
(3
×
)  
sot323_fr  
Fig 19.
 
Reflow soldering footprint SOT323 (SC-70)  
4.6  
2.575  
1.425  
(3
×
)  
solder lands  
solder resist  
occupied area  
1.8  
3.65 2.1  
Dimensions in mm  
preferred transport  
direction during soldering  
09  
(2
×
)  
sot323_fw  
Fig 20.
 
Wave soldering footprint SOT323 (SC-70)  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
12 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
11. Revision
 
history  
Table 8.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BSS138PW v.1  
20101102  
Product data sheet  
–
–
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
13 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
12. Legal information  
12.1 Data
 
sheet status  
Document status

[1][2]  

Product status

[3]  

Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet
 
Qualification  
Product [short] data sheet
 
Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL

.  
malfunction of a Nexperia product can reasonably be expected  
12.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. Nexperia accepts no liability for inclusion and/or use of  
Nexperia products in such equipment or applications and  
Draft —
The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
therefore such inclusion and/or use is at the customer’s own risk.  
Applications —
Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet —
A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the Nexperia  
product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
Product specification —
The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the
customer’s applications and products using Nexperia  
products in order to avoid a default of the applications and  
the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
12.3 Disclaimers  
Limiting values —
Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Limited warranty and liability —
Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including – without limitation – lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
Terms and conditions of commercial sale —
Nexperia  
products are sold subject to the general terms and conditions of commercial  
sale, as published at

erms
, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever,
Nexperia’s
aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the
Terms and conditions of commercial sale
of Nexperia.  
Right to make changes —
Nexperia reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
No offer to sell or license —
Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control —
This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Suitability for use —
Nexperia products are not designed,  
authorized or warranted to be suitable for use in life support, life-critical or  
safety-critical systems or equipment, nor in applications where failure or  
BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
14 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
Quick reference data —
The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit:

For sales office addresses, please send an email to:

BSS138PW  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 1 — 2 November 2010  
15 of 16  

BSS138PW  
Nexperia  
60 V, 320 mA N-channel Trench MOSFET  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
1.1  
1.2  
1.3  
1.4  
General description
 
. . . . . . . . . . . . . . . . . . . . .
 
1  
Features and benefit
s
. . . . . . . . . . . . . . . . . . . .
 
1  
Applications .
 
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
1  
Quick reference data
 
. . . . . . . . . . . . . . . . . . . .
 
1  
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
 
2  
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
 
2  
Markin
g
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
 
2  
Thermal characteristics
 
. . . . . . . . . . . . . . . . . .
 
4  
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
 
6  
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . .
 
1
0  
Quality information . . . . . . . . . . . . . . . . . . . . .
 
10  
Package outline . . . . . . . . . . . . . . . . . . . . . . . .
 
11  
Soldering .
 
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
12  
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
 
1
3  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . .
 
14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
 
14  
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1
4  
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
 
1
4  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
 
15  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . .
 
15  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
 
16  

©

Nexperia B.V. 2017. All rights reserved  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release:
02 November 2010