Nexperia-BST52-135
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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
BST50; BST51; BST52
NPN Darlington transistors
Product specification
2004 Dec 09
Supersedes data of 2001 Feb 20
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
FEATURES
PINNING
PIN
•
High current (max. 0.5 A)
•
Low voltage (max. 80 V)
•
Integrated diode and resistor.
DESCRIPTION
1
2
3
emitter
collector
base
APPLICATIONS
•
Industrial switching applications such as:
– Print
hammer
– Solenoid
– Relay
and lamp driving.
2
3
DESCRIPTION
NPN Darlington transistor in a SOT89 plastic package.
PNP complements: BST60, BST61 and BST62.
MARKING
1
3
2
1
sym080
TYPE NUMBER
BST50
MARKING CODE
AS1
AS2
AS3
BST51
BST52
Fig.1 Simplified
outline (SOT89) and symbol.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
NAME
VERSION
BST50
BST51
BST52
SC-62
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
SOT89
2004 Dec 09
2
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
P
A
RAMETER
collector-base voltage
BST50
CONDITIONS
open emitter
MIN.
MAX.
UNIT
V
CBO
−
−
−
60
V
V
V
BST51
80
90
BST52
V
CES
collector-emitter voltage
BST50
V
BE
= 0 V
−
−
−
−
−
−
−
−
−
45
V
V
V
V
A
A
BST51
60
BST52
80
V
EBO
I
C
I
CM
I
B
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
junction temperature
ambient temperature
storage temperature
open collector
5
1
2
100
1.3
150
+150
+150
mA
W
P
tot
T
j
T
amb
≤
25
°
C; note 1
°
C
°
C
°
C
T
amb
T
stg
−
65
−
65
Note
1. Device
mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
THERMAL CHARACTERISTICS
SYMBOL
P
A
RAMETER
CONDITIONS
VALUE
UNIT
R
th(j-a)
R
th(j-s)
thermal resistance from junction to ambient
note 1
96
16
K/W
K/W
thermal resistance from junction to soldering point
Note
1. Device
mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2
.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
2004 Dec 09
3
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
I
CES
P
A
RAMETER
CONDITIONS
MIN.
TY
P
.
M
AX. UNIT
collector-emitter cut-off current
BST50
V
BE
= 0 V; V
CE
= 45 V
V
BE
= 0 V; V
CE
= 60 V
−
−
−
−
−
50
50
50
50
nA
nA
nA
nA
BST51
−
−
−
BST52
V
BE
= 0 V; V
CE
= 80 V
I
EBO
h
FE
emitter-base cut-off current
DC current gain
I
C
= 0 A; V
EB
= 4 V
V
CE
= 10 V; note 1; (see Fig.2)
I
C
= 150 mA
1000
2000
−
−
−
−
−
−
I
C
= 500 mA
−
V
CEsat
collector-emitter saturation
voltage
I
C
= 500 mA; I
B
= 0.5 mA
1.3
1.3
V
V
I
C
= 500 mA; I
B
= 0.5 mA;
−
T
j
= 150
°
C
V
BEsat
f
T
base-emitter saturation voltage
I
C
= 500 mA; I
B
= 0.5 mA
−
−
−
1.9
V
transition frequency
I
C
= 500 mA; V
CE
= 5 V;
f = 100 MHz
200
−
MHz
Switching times (between 10% and 90% levels);
(see Fig.3)
t
on
t
off
turn-on time
turn-off time
I
Con
= 500 mA; I
Bon
= 0.5 mA;
−
−
400
−
−
ns
ns
I
Boff
=
−
0.5 mA
1500
Note
1. Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02.
2004 Dec 09
4
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
MGD838
5000
h
FE
4000
3000
2000
1000
0
10
−
1
2
3
1
10
10
10
I
(mA)
C
V
CE
= 10 V.
Fig.2 DC
current gain; typical values.
V
B
V
C
BB
CC
n
R
R
V
(probe)
(probe)
o
oscilloscope
oscilloscope
450
Ω
450
Ω
R2
V
i
DUT
R1
MLB826
V
i
= 10 V; T = 200
µ
s; t
p
= 6
µ
s; t
r
= t
f
≤
3 ns.
R1 = 56
Ω
; R2 = 10 k
Ω
; R
B
= 10 k
Ω
; R
C
= 18
Ω
.
V
BB
=
−
1.8 V; V
CC
= 10.7 V.
Oscilloscope: input impedance Z
i
= 50
Ω
.
Fig.3 Test
circuit for switching times.
5
2004 Dec 09
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
PACKAGE OUTLINE
Plastic surface mounted package; collector pad for good heat transfer; 3 leads
SOT89
B
A
D
b
p3
E
H
E
L
p
1
2
3
c
b
p2
w
M
b
p1
e
1
e
0
2
4 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
b
b
b
c
D
E
e
e
H
E
L
p
w
p1
p2
p3
1
1.6
1.4
0.48
0.35
0.53
0.40
1.8
1.4
0.44
0.23
4.6
4.4
2.6
2.4
4.25
3.75
1.2
0.8
mm
3.0
1.5
0.13
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
JEITA
99-09-13
04-08-03
SOT89
TO-243
SC-62
2004 Dec 09
6
Philips Semiconductors
Product specification
NPN Darlington transistors
BST50; BST51; BST52
DATA SHEET STATUS
DATA SHEET
STATUS
(1)
PRODUCT
STATUS
(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This
data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and suppl
y
.
R
elevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please
consult the most recently issued data sheet before initiating or completing a design.
2. The
product status of the device(s) described in this data sheet may have changed since this data sheet was
3. For
data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition
Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products –
including circuits, standard cells, and/or software –
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Dec 09
7
Philips Semiconductors – a worldwide company
Contact information
Fax:
+31 40 27 24825
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/05/pp
8
Date of release:
2004 Dec 09
Document order number:
9397 750 13877
