Nexperia-BST82-235
| Part # | Nexperia-BST82-235 |
Download  | Nexperia-BST82-235 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
BST82
N-channel enhancement mode field-effect transistor
Rev. 03 — 26 July 2000
Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
T
r
enchMOS™
1
technolog
y
.
Product availability:
BST82 in SOT23.
2. Features
■
T
r
enchMOS™ technology
■
Very fast switching
■
Logic level compatible
■
Subminiature surface mount package.
3. Applications
■
Relay driver
■
High speed line driver
■
Logic level translator.
c
c
4. Pinning
information
Table 1:
Pinning – SOT23, simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
3
d
2
source (s)
drain (d)
3
g
03ab44
03ab30
s
1
2
SOT23
N-channel MOSFET
1.
T
r
enchMOS
is a trademark of Royal Philips Electronics.
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick
reference data
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
100
190
0.83
150
10
Unit
V
V
DS
I
D
drain-source voltage (DC)
drain current (DC)
T
j
= 25 to 150
°
C
T
sp
= 25
°
C; V
GS
= 5 V
T
sp
= 25
°
C
−
mA
W
P
tot
T
j
total power dissipation
junction temperature
−
−
°
C
Ω
R
DSon
drain-source on-state resistance
V
GS
= 5 V; I
D
= 150 mA
5
6. Limiting
values
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
−
Max
100
100
±
20
190
120
0.8
Unit
V
V
DS
V
DGR
V
GS
I
D
drain-source voltage (DC)
T
j
= 25 to 150
°
C
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
T
j
= 25 to 150
°
C; R
GS
= 20 k
Ω
−
V
−
V
T
sp
= 25
°
C; V
GS
= 5 V;
Figure 2
and
3
T
sp
= 100
°
C; V
GS
= 5 V;
Figure 2
−
mA
mA
A
−
I
DM
peak drain current
T
sp
= 25
°
C; pulsed; t
p
≤
10
µ
s;
−
Figure 3
P
tot
T
stg
T
j
total power dissipation
storage temperature
T
sp
= 25
°
C;
Figure 1
−
0.83
W
−
65
−
65
+150
+150
°
C
°
C
operating junction temperature
Source-drain diode
I
S
source (diode forward) current (DC)
peak source (diode forward) current
T
sp
= 25
°
C
−
−
190
0.8
mA
A
I
SM
T
sp
= 25
°
C; pulsed; t
p
≤
10
µ
s
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
2 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa17
03aa25
120
120
P
der
(%)
100
I
der
(%)
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75
100 125 150 175
o
0
25
50
75
100 125 150 175
o
T
( C)
sp
T
( C)
sp
V
GS
≥
5 V
P
tot
P
der
=
×
100
%
———————-
P
I
D
°
tot
(
25
C
)
I
der
=
×
100
%
——————
I
°
D
(
25
C
)
Fig 1.
Normalized total power dissipation as a
function of solder point temperature.
Fig 2.
Normalized continuous drain current as a
function of solder point temperature.
03aa60
1
t
= 10
µ
s
p
R
= V
/ I
DS
DSon
D
I
D
(A)
100
µ
s
-1
10
1 ms
10 ms
100 ms
D.C.
t
p
P
δ
=
-2
T
10
t
t
p
T
o
T
V
= 25
C
sp
-3
10
2
3
10
1
10
10
(V)
DS
T
sp
= 25
°
C; I
DM
is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
3 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal
characteristics
Table 4:
Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
R
th(j-sp)
thermal resistance from junction to solder
point
mounted on a metal clad substrate;
Figure 4
150
K/W
R
th(j-a)
thermal resistance from junction to ambient
mounted on a printed circuit board;
minimum footprint
350
K/W
7.1 Transient
thermal impedance
03aa57
3
10
Z
th(j-sp)
(K/W)
δ
= 0.5
0.2
2
10
0.1
10
0.05
0.02
t
p
P
δ
=
T
single pulse
1
t
t
p
T
0.1
-5
-4
-3
10
-2
10
-1
10
10
10
1
10
t
(s)
p
Mounted on a metal substrate.
Fig 4.
Transient thermal impedance from junction to solder point as a function of
pulse duration.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
4 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5:
Characteristics
T
j
= 25
°
C unless otherwise specified
Symbol
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= 10
µ
A; V
GS
= 0 V
T
j
= 25
°
C
100
89
130
−
−
V
V
T
j
=
−
55
°
C
−
V
GS(th)
gate-source threshold voltage
I
D
= 1 mA; V
DS
= V
GS
Figure 9
;
T
j
= 25
°
C
T
j
= 150
°
C
T
j
=
−
55
°
C
1
2
−
−
−
V
V
V
0.6
−
−
3.5
I
DSS
drain-source leakage current
V
DS
= 60 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 150
°
C
−
−
−
0.01
−
1.0
10
µ
A
µ
A
nA
I
GSS
gate-source leakage current
V
GS
=
±
20 V; V
DS
= 0 V
10
100
R
DSon
drain-source on-state
resistance
V
GS
= 5 V; I
D
= 150 mA;
Figure 7
and
8
T
j
= 25
°
C
−
−
5
10
23
Ω
Ω
T
j
= 150
°
C
−
Dynamic characteristics
g
fs
forward transconductance
V
DS
= 5 V; I
D
= 175 mA;
Figure 11
−
350
−
mS
C
iss
C
oss
C
rss
t
on
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
V
GS
= 0 V; V
DS
= 10 V;
f = 1 MHz;
Figure 12
−
−
−
−
−
25
8.5
5
40
15
10
10
15
pF
pF
pF
ns
ns
V
DD
= 50 V; R
D
= 250
Ω
;
V
GS
= 10 V; R
G
= 50
Ω
;
R
GS
= 50
Ω
3
t
off
turn-off time
12
Source-drain diode
V
SD
source-drain (diode forward)
I
S
= 300 mA; V
GS
= 0 V;
−
0.95
1.5
V
voltage
Figure 13
t
rr
reverse recovery time
recovered charge
I
S
= 300 mA;
dI
S
/dt =
−
100 A/
µ
s;
V
GS
= 0 V; V
DS
= 25 V
−
−
30
30
−
−
ns
Q
r
nC
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
5 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa63
= 10V
03aa65
0.5
I
0.7
I
o
D
D
T =
25
C
V
GS
j
V
> I
X R
D
0.45
DS
DSon
(A)
(A)
0.6
0.5
0.4
0.3
0.2
0.1
0
5 V
0.4
0.35
0.3
o
T =
25
C
j
4 V
0.25
0.2
o
C
150
3.5 V
3 V
0.15
0.1
0.05
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
(V)
2
0
1
2
3
4
5
6
7
8
V
V
(V)
GS
DS
T
j
= 25
°
C
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa29
03aa64
3
12
a
o
T =
25 C
2.8
3 V
3.5V
j
R
11
10
9
DSon
(
Ω
)
2.6
2.4
2.2
2
4 V
8
1.8
1.6
1.4
1.2
1
7
6
5 V
5
4
V
= 10V
GS
0.8
0.6
0.4
0.2
0
3
2
1
0
-60
-20
20
60
100
140
180
0
0.1
0.2
0.3
0.4
(A)
0.5
o
T ( C)
I
D
j
T
j
= 25
°
C
R
DSon
a
=
—————————
R
DSon
(
25
C
)
°
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
6 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa34
03aa37
3
-1
10
I
V
D
GS(th)
(V)
2.5
(A)
-2
10
typ
2
min
typ
-3
-4
-5
-6
10
10
10
10
1.5
min
1
0.5
0
-60
-20
20
60
100
140
180
0
0.5
1
1.5
2
2.5
3
o
T ( C)
V
(V)
j
GS
I
D
= 1 mA; V
DS
= V
GS
T
j
= 25
°
C; V
DS
= 5 V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03aa66
03aa68
0.5
2
10
g
fs
0.45
0.4
V
> I
X R
DSon
(S)
DS
D
C
, C
,
iss oss
o
T =
25
C
C
(pF)
10
j
rss
C
iss
0.35
0.3
0.25
0.2
o
150
C
C
oss
0.15
0.1
0.05
0
C
rss
1
0
0.1
0.2
0.3
0.4
0.5
0.6
(A)
0.7
-1
2
10
10
1
10
V
(V)
I
DS
D
T
j
= 25
°
C and 150
°
C; V
DS
>
I
D
×
R
DSon
V
GS
= 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
7 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa67
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
I
S
V
= 0 V
(A)
GS
o
150
C
o
T =
25
C
j
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
(V)
SD
T
j
= 25
°
C and 150
°
C; V
GS
= 0 V
Fig 13. Source (diode forward) current as a function of source-drain (diode forward)
voltage; typical values.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
8 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package
outline
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w
M
B
1
L
p
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
Fig 14. SOT23.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
9 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6:
Revision history
Rev Date
CPCN
Description
03 20000726 HZG303
Product specification; third version; supersedes BST82_CNV_2 of 970623.
Converted from VDMOS (Nijmegen) to
T
r
enchMOS™ technology (Hazel Grove).
Product specification; second version.
02 19970623
01 19901031
–
–
Product specification; initial version.
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
10 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status
Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification
—
The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support —
These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injur
y
.
P
hilips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition
—
Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC
60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliabilit
y
.
Right to make changes —
Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information
—
Applications that are described herein for any
of these products are for illustrative purposes onl
y
.
P
hilips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07223
© Philips Electronics N.
V
.
2
000 All rights reserved.
Product specification
Rev. 03 — 26 July 2000
11 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Philips Semiconductors – a worldwide company
Argentina:
s
ee South
A
m
er
i
c
a
Netherlands:
T
e
l
.
+
31 40 278 2785, Fax. +31 40 278 8399
New Zealand:
T
e
l
.
+
64 98 49 4160, Fax. +64 98 49 7811
Norway:
T
e
l
.
+
47 22 74 8000, Fax. +47 22 74 8341
Philippines:
T
e
l
.
+
63 28 16 6380, Fax. +63 28 17 3474
Poland:
T
e
l
.
+
48 22 5710 000, Fax. +48 22 5710 001
Portugal:
s
ee Spa
i
n
Australia:
T
e
l
.
+
61 2 9704 8141, Fax. +61 2 9704 8139
Austria:
T
e
l
.
+
43 160 101, Fax. +43 160 101 1210
Belarus:
T
e
l
.
+
375 17 220 0733, Fax. +375 17 220 0773
Belgium:
s
ee
T
h
e Nether
l
a
nds
Brazil:
s
ee South
A
m
er
i
c
a
Bulgaria:
T
e
l
.
+
359 268 9211, Fax. +359 268 9102
Canada:
T
e
l
.
+
1 800 234 7381
Romania:
s
ee
I
t
a
l
y
Russia:
T
e
l
.
+
7 095 755 6918, Fax. +7 095 755 6919
Singapore:
T
e
l
.
+
65 350 2538, Fax. +65 251 6500
Slovakia:
s
ee
A
u
str
i
a
China/Hong Kong:
T
e
l
.
+
852 2 319 7888, Fax. +852 2 319 7700
Colombia:
s
ee South
A
m
er
i
c
a
Czech Republic:
s
ee
A
u
str
i
a
Slovenia:
s
ee
I
t
a
l
y
Denmark:
T
e
l
.
+
45 3 288 2636, Fax. +45 3 157 0044
Finland:
T
e
l
.
+
358 961 5800, Fax. +358 96 158 0920
France:
T
e
l
.
+
33 14 099 6161, Fax. +33 14 099 6427
Germany:
T
e
l
.
+
49 40 23 5360, Fax. +49 402 353 6300
Hungary:
s
ee
A
u
str
i
a
South Africa:
T
e
l
.
+
27 11 471 5401, Fax. +27 11 471 5398
South America:
T
e
l
.
+
55 11 821 2333, Fax. +55 11 829 1849
Spain:
T
e
l
.
+
34 33 01 6312, Fax. +34 33 01 4107
Sweden:
T
e
l
.
+
46 86 32 2000, Fax. +46 86 32 2745
Switzerland:
T
e
l
.
+
41 14 88 2686, Fax. +41 14 81 7730
Taiwan:
T
e
l
.
+
886 22 134 2451, Fax. +886 22 134 2874
Thailand:
T
e
l
.
+
66 23 61 7910, Fax. +66 23 98 3447
Turkey:
T
e
l
.
+
90 216 522 1500, Fax. +90 216 522 1813
Ukraine:
T
e
l
.
+
380 44 264 2776, Fax. +380 44 268 0461
United Kingdom:
T
e
l
.
+
44 208 730 5000, Fax. +44 208 754 8421
United States:
T
e
l
.
+
1 800 234 7381
India:
T
e
l
.
+
91 22 493 8541, Fax. +91 22 493 8722
Indonesia:
s
ee S
i
n
gapo
r
e
Ireland:
T
e
l
.
+
353 17 64 0000, Fax. +353 17 64 0200
Israel:
T
e
l
.
+
972 36 45 0444, Fax. +972 36 49 1007
Italy:
T
e
l
.
+
39 039 203 6838, Fax +39 039 203 6800
Japan:
T
e
l
.
+
81 33 740 5130, Fax. +81 3 3740 5057
Korea:
T
e
l
.
+
82 27 09 1412, Fax. +82 27 09 1415
Malaysia:
T
e
l
.
+
60 37 50 5214, Fax. +60 37 57 4880
Mexico:
T
e
l
.
+
9-5 800 234 7381
Uruguay:
s
ee South
A
m
er
i
c
a
Vietnam:
s
ee S
i
n
gapo
r
e
Y
u
goslavia:
T
e
l
.
+
381 11 3341 299, Fax. +381 11 3342 553
Middle East:
s
ee
I
t
a
l
y
For all other countries apply to:
Philips Semiconductors,
Marketing Communications,
Building BE,
P
.
O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 272 4825
(SCA70)
9397 750 07223
© Philips Electronics N.
V
.
2
000. All rights reserved.
Product specification
Rev. 03 — 26 July 2000
12 of 13
BST82
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .
2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . .
2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .
4
Transient thermal impedance . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
10
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . .
11
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 26 July 2000
Document order number: 9397 750 07223
