Nexperia-BUK624R5-30C
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BUK624R5-30C
N-channel TrenchMOS intermediate level FET
Rev. 2 — 17 September 2010
Product data sheet
1. Product
profile
1.1 General
description
Intermediate level gate drive N-channel enhancement mode Field-Effect Transistor (FET)
in a plastic package using advanced TrenchMOS technology. This product has been
designed and qualified to the appropriate AEC Q101 standard for use in high performance
automotive applications.
1.2 Features
and benefits
AEC Q101 compliant
Suitable for thermally demanding
environments due to 175 °C rating
Suitable for standard and logic level
gate drive sources
1.3 Applications
12 V Automotive systems
Start-Stop micro-hybrid applications
Transmission control
Electric and electro-hydraulic power
steering
Ultra high performance power
Motors, lamps and solenoid control
switching
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min Typ Max
Unit
drain-source
voltage
T
j
≥
25 °C; T
j
≤
175 °C
–
–
–
–
–
–
30
V
[1]
I
D
drain current
V
GS
= 10 V; T
mb
= 25 °C;
see
Figure 1
90
A
P
tot
total power
dissipation
T
mb
= 25 °C; see
Figure 2
158
W
Static characteristics
R
DSon
drain-source
V
GS
= 10 V; I
D
= 25 A;
–
3.8
4.5
m
Ω
on-state
T
j
= 25 °C; see
Figure 11
resistance
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
Table 1.
Symbol
Quick reference data
…continued
Parameter Conditions
Min Typ Max
Unit
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
I
D
= 90 A; V
sup
≤
30 V;
R
GS
= 50
Ω
; V
GS
= 10 V;
–
–
271 mJ
avalanche energy
T
j(init)
= 25 °C; unclamped
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 24 V;
GS
= 10 V; see
Figure 13
;
see
Figure 14
–
20
–
nC
V
[1] Continuous
current is limited by package.
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
S
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
2
1
3
SOT428 (DPAK)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK624R5-30C
DPAK
plastic single-ended surface-mounted package (DPAK); 3 leads
SOT428
(one lead cropped)
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
2 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
30
Unit
V
drain-source voltage
gate-source voltage
T
j
≥
25 °C; T
j
≤
175 °C
–
[1]
[2]
[3]
[3]
V
GS
Pulsed
-20
20
V
DC
-16
16
V
I
D
drain current
T
mb
= 25 °C; V
GS
= 10 V; see
Figure 1
T
mb
= 100 °C; V
GS
= 10 V; see
Figure 1
–
–
–
90
A
90
A
I
DM
peak drain current
T
mb
= 25 °C; t
p
≤
10 µs; pulsed;
543
A
see
Figure 3
P
tot
T
stg
T
j
total power dissipation
storage temperature
junction temperature
T
mb
= 25 °C; see
Figure 2
–
158
175
175
W
-55
-55
°C
°C
Source-drain diode
[3]
I
S
source current
peak source current
T
mb
= 25 °C
–
–
90
A
A
I
SM
t
p
≤
10 µs; pulsed; T
mb
= 25 °C
543
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
I
D
= 90 A; V
sup
≤
30 V; R
GS
= 50
Ω
;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped
–
–
271
–
mJ
mJ
avalanche energy
[4][5][6]
E
DS(AL)R
repetitive drain-source
avalanche energy
[1] Accumulated
pulse duration not to exceed 5mins.
[2] -16V
accumulated duration not to exceed 168 hrs.
[3] Continuous
current is limited by package.
[4] Single-pulse
avalanche rating limited by maximum junction temperature of 175 °C.
[5] Repetitive
avalanche rating limited by an average junction temperature of 170 °C.
[6] Refer
to application note AN10273 for further information.
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
3 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
003aae796
03na19
120
160
I
D
P
(%)
der
(A)
120
80
80
(1)
40
40
0
0
0
0
50
100
150
200
50
100
150
200
T
mb
( C)
T
(
°
C)
mb
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
003aae593
10
4
I
D
(A)
10
3
Limit R
DSon
= V
DS
/ I
D
t
p
=10
μ
s
100
μ
s
10
2
10
DC
1 ms
10 ms
100 ms
1
10
-1
10
-1
1
10
10
2
V
DS
(V)
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
4 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction
to mounting base
see
Figure 4
–
–
0.95
K/W
003aae304
1
Z
th(j-mb)
(K/W)
δ
= 0.5
0.2
0.1
10
-1
10
-2
10
-3
0.05
0.02
t
p
δ
=
P
T
single shot
t
t
p
T
t
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
1
(s)
p
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
5 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
30
27
1.8
–
–
V
V
V
–
–
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C;
2.3
2.8
voltage
see
Figure 9
; see
Figure 10
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C;
see
Figure 9
–
–
–
3.3
–
V
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C;
see
Figure 9
0.8
I
DSS
drain leakage current
gate leakage current
V
DS
= 30 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25 °C
V
DS
= 0 V; V
GS
= -20 V; T
j
= 25 °C
–
–
–
–
–
–
500
1
µA
µA
nA
nA
m
Ω
0.02
2
I
GSS
100
100
4.5
2
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
3.8
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
see
Figure 11
–
–
–
4.8
5.6
–
6
m
Ω
m
Ω
m
Ω
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C;
7.5
8.6
see
Figure 11
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
see
Figure 12
; see
Figure 11
Dynamic characteristics
Q
G(tot)
total gate charge
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
–
–
78
45
–
–
nC
nC
I
D
= 25 A; V
DS
= 24 V; V
GS
= 5 V;
see
Figure 13
; see
Figure 14
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
I
D
= 25 A; V
DS
= 24 V; V
GS
= 10 V;
see
Figure 13
; see
Figure 14
–
–
–
–
–
15
20
–
–
nC
nC
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C; see
Figure 15
3530 4707 pF
623
381
748
522
pF
pF
reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 25 V; R
L
= 1
Ω
; V
GS
= 10 V;
R
G(ext)
= 10
Ω
–
–
–
–
–
19
–
–
–
–
–
ns
ns
ns
ns
nH
54
turn-off delay time
fall time
135
83
L
D
internal drain
inductance
from upper edge of drain mounting base
to centre of die ; T
j
= 25 °C
3.5
L
S
internal source
inductance
from source lead to source bond pad ;
T
j
= 25 °C
–
7.5
–
nH
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
6 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
Table 6.
Symbol
Characteristics
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C;
see
Figure 16
–
0.8
1.2
V
t
rr
reverse recovery time
I
S
= 20 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
46
57
–
–
ns
V
DS
= 25 V
Q
r
recovered charge
nC
003aae594
003aae308
125
40
g
fs
R
D
S
o
n
(S)
(m
)
100
30
20
10
0
75
50
25
0
0
25
50
75
100
0
5
10
15
20
I
(A)
V
GS
(V)
D
Fig 5.
Forward transconductance as a function of
drain current; typical values
Fig 6.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
003aae808
003aae595
100
100
10.0 5.0
4.5
I
D
I
D
(A)
(A)
V
GS
(V) =
4.0
80
60
75
50
25
0
3.8
3.6
40
T
j
= 175
C
3.4
3.2
20
T
j
= 25
C
0
0
0.5
1
1.5
2
0
2
4
6
V
DS
(V)
V
GS
(V)
Fig 7.
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig 8.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
7 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
003aad805
003aad806
4
10
-1
I
D
(A)
10
-2
V
GS(th)
(V)
3
2
1
max
typ
min
typ
max
10
-3
min
10
-4
10
-5
10
-6
0
-60
0
60
120
180
0
1
2
3
4
V
GS
(V)
T
j
(
°
C)
Fig 9.
Gate-source threshold voltage as a function of
junction temperature
Fig 10.
Sub-threshold drain current as a function of
gate-source voltage
003aae596
03aa27
2
20
R
D
S
o
n
a
3.8
V
GS
(V) =
4.0
(m
)
16
12
8
1.5
1
0.5
0
4.5 5.0
10 6.0
4
0
20
40
60
80
100
−
60
0
60
120
180
T ( C)
°
j
I
D
(A)
Fig 11.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
8 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
003aae311
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
GS(pl)
V
= 14V
DS
24V
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
003aaa508
0
20
40
60
80
Q
(nC)
G
Fig 13.
Gate charge waveform definitions
Fig 14.
Gate-source voltage as a function of gate
charge; typical values
003aae313
003aae309
10
4
100
I
S
(A)
80
C
C
is s
(
p
F)
60
40
10
3
C
C
o
s
s
T =
175
C
T =
25
j
C
°
°
j
rs s
20
0
10
2
10
-1
1
10
10
2
0
0.3
0.6
0.9
V
1.2
V
(V)
(V)
SD
DS
Fig 15.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
Fig 16.
Source current as a function of source-drain
voltage; typical values
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
9 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
7. Package
outline
Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)
SOT428
y
E
A
A
A
b
E
1
1
2
mounting
base
D
2
D
1
H
D
2
L
L
2
L
1
1
3
b
1
b
M
c
w
A
e
e
1
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
y
max
D
min
E
min
L
1
min
2
1
UNIT
A
A
1
b
b
b
c
D
E
e
e
1
H
D
L
L
2
w
1
2
1
2.38
2.22
0.93
0.46
0.89
0.71
1.1
0.9
5.46
5.00
0.56
0.20
6.22
5.98
6.73
6.47
10.4
9.6
2.95
2.55
0.9
0.5
4.0
4.45
0.5
mm
2.285 4.57
0.2
0.2
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
06-02-14
06-03-16
SOT428
SC-63
TO-252
Fig 17.
Package outline SOT428 (DPAK)
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
10 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
8. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
Change notice
Supersedes
BUK624R5-30C v.2
Modifications:
20100917
Product data sheet
–
BUK624R5-30C v.1
•
Status changed from Objective to Product.
20100621 Objective
data sheet
BUK624R5-30C v.1
–
–
BUK624R5-30C
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©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
11 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
9. Legal
information
9.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Suitability for use in automotive applications
— This Nexperia
product has been qualified for use in automotive
9.2 Definitions
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the
customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever,
Nexperia’s
aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
Right to make changes
— Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale
— Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
BUK624R5-30C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
12 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
10. Contact information
BUK624R5-30C
All information provided in this document is subject to legal disclaimers.
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 2 — 17 September 2010
13 of 14
BUK624R5-30C
Nexperia
N-channel TrenchMOS intermediate level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics
. . . . . . . . . . . . . . . . . . .5
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .
1
1
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
2
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
17 September 2010
