Nexperia-BUK7Y1R4-40HX
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BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
31 May 2018
Product data sheet
1. General
description
Automotive qualified N-channel MOSFET using the latest Trench 9 low ohmic superjunction
technology, housed in a robust LFPAK56 package. This product has been fully designed and
qualified to meet AEC-Q101 requirements delivering high performance and endurance.
2. Features
and benefits
•
Fully automotive qualified to AEC-Q101:
175 °C rating suitable for thermally demanding environments
Trench 9 Superjunction technology:
•
•
•
Reduced cell pitch enables enhanced power density and efficiency with lower R
DSon
in
same footprint
•
•
Improved SOA and avalanche capability compared to standard TrenchMOS
Tight V
GS(th)
limits enable easy paralleling of MOSFE
T
s
•
LFPAK Gull Wing leads:
•
High Board Level Reliability absorbing mechanical stress during thermal cycling, unlike
traditional QFN packages
•
•
Visual (AOI) soldering inspection, no need for expensive x-ray equipment
Easy solder wetting for good mechanical solder joint
•
LFPAK copper clip technology:
•
•
Improved reliability, with reduced R
th
and R
DSon
Increases maximum current capability and improved current spreading
3. Applications
•
•
•
•
•
12 V automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
4. Quick
reference data
Table 1. Quick reference data
Symbol
V
DS
Parameter
Conditions
Min
Typ
Max
40
Unit
V
drain-source voltage
drain current
25 °C ≤
T
j
≤ 175
°C
–
–
–
–
–
–
I
D
190
395
A
P
tot
W
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
R
DSon
drain-source on-state
resistance
Dynamic characteristics
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
0.74
1.06
1.4
mΩ
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
–
13.4
27
nC
nC
Source-drain diode
Q
r
recovered charge
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
V
DS
= 20 V
–
–
39
–
–
S
softness factor
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
0.7
[1] 190A
continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
S
2
G
3
4
mbb076
1
2 3 4
mb
mounting base; connected to
drain
LFPAK56; Power-
SO8 (SOT669)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK7Y1R4-40H
LFPAK56;
plastic, single-ended surface-mounted package; 4 terminals
SOT669
Power-SO8
7. Marking
Table 4. Marking codes
Type number
Marking code
BUK7Y1R4-40H
71H440
©
BUK7Y1R4-40H
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Nexperia B.
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018. All rights reserved
Product data sheet
31 May 2018
2 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
P
tot
Parameter
Conditions
Min
Max
40
Unit
V
drain-source voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤
T
j
≤ 175
°C
–
DC; T
j
≤ 175
°C
-10
20
V
–
395
190
190
600
175
175
W
A
I
D
–
–
A
I
DM
T
stg
T
j
peak drain current
storage temperature
junction temperature
–
A
-55
-55
°C
°C
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
145
600
A
A
I
SM
pulsed; t
p
≤ 10
µs; T
mb
= 25 °C
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-
I
D
= 190 A; V
sup
≤ 40
V; R
GS
= 50 Ω;
V
GS
= 10 V; T
j(init)
= 25 °C; unclamped;
–
154
mJ
source avalanche
energy
[1] 190A
continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] 145A
continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[3] Single-pulse
avalanche rating limited by maximum junction temperature of 175 °C.
[4] Refer
to application note AN10273 for further information.
©
BUK7Y1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
3 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
03na19
aaa-025649
120
400
I
D
(A)
P
der
(%)
300
200
100
0
80
(1)
40
0
0
50
100
150
200
0
25
50
75 100
125 150 175 200
(°C)
T
(°C)
T
mb
mb
V
GS
≥ 10 V
(1) 190A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Continuous drain current as a function of
mounting base temperature
aaa-026108
3
10
I
t
p
= 10 us
D
Limit R
= V
/ I
DS D
DSon
(A)
100 us
2
10
DC
10
1 ms
10 ms
1
100 ms
-1
10
-1
2
10
1
10
10
V
DS
(V)
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
©
BUK7Y1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
4 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
aaa-025650
3
2
10
I
AL
(A)
10
(1)
(2)
(3)
10
1
-1
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
–
0.29
0.38
K/W
aaa-026110
1
Z
th(j-mb)
(K/W)
δ = 0.5
-1
-2
-3
10
0.2
0.1
0.05
t
p
P
10
10
δ =
0.02
T
single shot
t
t
p
T
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration
©
BUK7Y1R4-40H
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Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
5 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -40 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
40
–
42
–
V
V
V
V
39.6
38.9
3
–
36
2.4
–
V
GS(th)
3.6
voltage
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 16 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
–
–
4.3
–
V
1
–
V
I
DSS
drain leakage current
gate leakage current
–
0.1
2.4
240
2
1
µA
µA
µA
nA
nA
mΩ
–
10
500
100
100
1.4
–
I
GSS
–
–
2
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C;
0.74
1.06
V
GS
= 10 V; I
D
= 25 A; T
j
= 105 °C;
1.05
1.16
1.46
0.4
1.57
1.74
2.18
1
2.23
2.45
3.05
2.5
mΩ
mΩ
mΩ
Ω
V
GS
= 10 V; I
D
= 25 A; T
j
= 125 °C;
V
GS
= 10 V; I
D
= 25 A; T
j
= 175 °C;
R
G
gate resistance
f = 1 MHz; T
j
= 25 °C
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
I
D
= 25 A; V
DS
= 32 V; V
GS
= 10 V;
–
–
–
–
–
–
73
103
32
nC
nC
nC
gate-source charge
gate-drain charge
input capacitance
output capacitance
21
13.4
27
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
5436 7610 pF
1314 1840 pF
C
oss
C
rss
reverse transfer
capacitance
238
524
pF
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 30 V; R
L
= 1.2 Ω; V
GS
= 10 V;
R
G(ext)
= 5 Ω
–
–
–
–
19
17
43
21
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode
V
SD
source-drain voltage
–
0.8
1.2
V
©
BUK7Y1R4-40H
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Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
6 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
Symbol
Parameter
Conditions
Min
Typ
37
Max
Unit
ns
t
rr
Q
r
S
reverse recovery time
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
–
–
–
–
–
–
V
DS
= 20 V
recovered charge
39
nC
softness factor
I
S
= 25 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
0.7
I
S
= 25 A; dI
S
/dt = -500 A/µs; V
GS
= 0 V;
–
0.56
–
aaa-026805
aaa-026112
300
5
I
R
DSon
(mΩ)
D
10 V
(A)
V
= 5.5 V
GS
240
180
120
60
4
3
2
1
0
5 V
4.5 V
4 V
0
0
1
2
3
DS
4
0
4
8
12
16
V (V)
GS
20
V
(V)
T
j
= 25 °C
T
j
= 25 °C; I
D
= 25 A
Fig. 6.
Output characteristics; drain current as a
function of drain-source voltage; typical values
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
aaa-026113
aaa-018139
360
5
I
V
GS(th)
(V)
D
(A)
300
240
180
120
60
4
3
2
1
0
Max
Typ
Min
25°C
175°C
3
T =
-55°C
j
0
0
1
2
4
5
V
6
7
-60 -30
0
30
60
90 120
150 180
T (°C)
(V)
GS
j
V
DS
= 8 V
I
D
= 1 mA ; V
DS
= V
GS
Fig. 8.
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
Fig. 9.
Gate-source threshold voltage as a function of
junction temperature
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BUK7Y1R4-40H
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Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
7 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
aaa-018138
aaa-026114
-1
10
10
I
R
(mΩ)
D
DSon
V
GS
= 4.5 V
5 V
(A)
-2
-3
-4
-5
-6
10
8
6
4
2
0
Min
Typ
Max
10
10
10
10
5.5 V
6 V
8 V
10 V
0
1
2
3
4
5
0
50
100
150
200
250
(A)
300
V
(V)
I
GS
D
T
j
= 25 °C; V
DS
= 5V
T
j
= 25 °C
Fig. 10.
Sub-threshold drain current as a function of
gate-source voltage
Fig. 11.
Drain-source on-state resistance as a function
of drain current; typical values
aaa-026897
aaa-026115
2.4
10
a
V
GS
(V)
2
8
6
4
2
0
1.6
1.2
0.8
0.4
0
V
DS
= 14 V
32 V
-60 -30
0
30
60
90 120
150 180
T (°C)
0
10
20
30
40
50
60
70
(nC)
G
80
Q
j
T
j
= 25 °C; I
D
= 25 A
Fig. 13.
Gate-source voltage as a function of gate
charge; typical values
Fig. 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature
©
BUK7Y1R4-40H
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Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
8 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
aaa-026116
4
10
V
C
(pF)
DS
C
iss
I
D
C
oss
3
10
V
V
GS(pl)
GS(th)
C
rss
V
GS
2
Q
GS2
10
Q
GS1
Q
GS
Q
GD
G(tot)
Q
003aaa508
10
10
Fig. 14.
Gate charge waveform definitions
-1
2
1
10
10
V
DS
(V)
V
GS
= 0 V; f = 1 MHz
Fig. 15.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
003aaf444
aaa-026117
300
240
180
120
60
I
S
I
D
(A)
(A)
t
rr
t
t
b
a
0
0.25 I
RM
175°C
T =
25°C
j
t
t
I
b
a
RM
S =
0
0
0.2
0.4
0.6
0.8
1
(V)
1.2
t (s)
V
SD
V
GS
= 0 V
Fig. 16.
Source-drain (diode forward) current as a
function of source-drain (diode forward)
voltage; typical values
Fig. 17.
Reverse recovery waveform definitions
©
BUK7Y1R4-40H
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Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
9 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
11. Package
outline
Plastic single-ended surface-mounted package (LFPAK56; Power-SO8); 4 leads
SOT669
A
2
E
A
C
c
E
b
2
1
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
A
c
b
1/2 e
A
(A )
3
C
A
1
q
L
detail X
y
C
θ
8
0
0
5 mm
°
°
scale
Dimensions (mm are the original dimensions)
(1)
(1)
(1)
(1)
(1)
Unit
A
A
A
A
b
b
b
b
4
c
c
2
D
D
1
E
E
e
H
L
L
L
2
w
y
1
2
3
2
3
1
1
max 1.20 0.15 1.10
nom
min 1.01 0.00 0.95
0.50 4.41
2.2 0.9
0.25 0.30 4.10 4.20
5.0 3.3
6.2 0.85 1.3
1.3
5.8 0.40 0.8
0.8
0.1
0.25
1.27
0.25
mm
0.35 3.62
2.0 0.7
0.19 0.24 3.80
4.8 3.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
sot669_po
Issue date
11-03-25
References
Outline
version
European
projection
IEC
JEDEC
JEITA
SOT669
MO-235
13-02-27
Fig. 18.
Package outline LFPAK56; Power-SO8 (SOT669)
©
BUK7Y1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
10 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
Suitability for use in automotive applications
— This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
12. Legal
information
Data sheet status
Document status
Product
Definition
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Product [short]
data sheet
This document contains the product
specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
Disclaimers
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale of Nexperia.
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
©
BUK7Y1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
11 / 12
Nexperia
BUK7Y1R4-40H
N-channel 40
V
,
1
.4 mΩ standard level MOSFET in LFPAK56
Contents
©
Nexperia B.
V
.
2
018. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 31 May 2018
©
BUK7Y1R4-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
018. All rights reserved
Product data sheet
31 May 2018
12 / 12
