Nexperia-BUK9515-100A127
| Part # | Nexperia-BUK9515-100A127 |
Download  | Nexperia-BUK9515-100A127 |
Important notice
Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
application markets
In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
the references to Nexperia, as shown below.
salesaddresses@nexperia.com
(email)
Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
the version, as shown below:
– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
reserved
Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
If you have any questions related to the data sheet, please contact our nearest sales office via e-mail
understanding,
Kind regards,
Team Nexperia
BUK9515-100A
-220AB
O
T
N-channel TrenchMOS logic level FET
Rev. 3 — 19 April 2011
Product data sheet
1. Product
profile
1.1 General
description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
1.2 Features
and benefits
AEC Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Automotive and general purpose
power switching
1.4 Quick
reference data
Table 1.
Symbol
V
DS
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
drain-source voltage
drain current
T
j
≥
25 °C; T
j
≤
175 °C
T
mb
= 25 °C
–
–
–
–
–
100
75
V
I
D
–
A
P
tot
total power dissipation
junction temperature
–
230
175
W
°C
T
j
-55
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25 °C
–
–
11.5 14.4 m
Ω
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C
12
–
15
m
Ω
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
I
D
= 35 A; V
sup
≤
25 V;
R
GS
= 50
Ω
; V
GS
= 5 V;
–
120
mJ
avalanche energy
T
j(init)
= 25 °C; unclamped
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
2. Pinning
information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base;
connected to drain
mbb076
S
1
2 3
SOT78A (TO-220AB)
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
BUK9515-100A
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting
hole; 3-lead TO-220AB
SOT78A
4. Limiting
values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
100
100
10
Unit
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
T
j
≥
25 °C; T
j
≤
175 °C
R
GS
= 20 k
Ω
–
V
V
DGR
V
GS
–
V
-10
–
V
I
D
T
mb
= 25 °C
75
A
T
mb
= 100 °C
T
mb
= 25 °C; pulsed
T
mb
= 25 °C
–
53
A
I
DM
P
tot
T
stg
T
j
peak drain current
–
313
230
175
175
15
A
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
–
W
°C
°C
V
-55
-55
-15
V
GSM
pulsed; t
p
≤
50 µs
Source-drain diode
I
S
source current
peak source current
T
mb
= 25 °C
–
–
75
A
A
I
SM
pulsed; T
mb
= 25 °C
313
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
I
D
= 35 A; V
sup
≤
25 V; R
GS
= 50
Ω
;
V
GS
= 5 V; T
j(init)
= 25 °C; unclamped
–
120
mJ
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
2 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf364
003aaf365
100
100
P
I
D
der
(%)
80
(%)
80
60
40
20
0
60
40
20
0
0
50
100
150
200
0
40
80
120
160
T
200
(
°
C)
mb
T
mb
(
°
C)
V
GS
≥
5 V
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
003aaf379
003aaf380
2
100
10
W
DSS
(%)
80
l
AV
25
°
C
60
40
20
0
10
T prior
to avalanche = 150
°
C
j
1
10
−
3
−
2
−
1
10
20
60
100
140
180
10
1
10
T
mb
(
°
C)
t
(ms)
AV
unclamped inductive load
I
D
= 75 A
Fig 3.
Normalised drain-source non-repetitive
avalanche energy as a function of
mounting-base temperature
Fig 4.
Single-shot avalanche rating; avalanche
current as a function of avalanche period
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
3 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf366
10
3
I
D
Limit R
DSon
= V
DS
/ I
D
(A)
t =10
s
μ
p
10
2
10
1
100
s
μ
1 ms
DC
10 ms
100 ms
10
-1
1
10
10
2
10
3
V
DS
(V)
T
mb
= 25 °C; I
DM
is single pulse
Fig 5.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal
characteristics
Table 5.
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to mounting base
–
–
0.65
K/W
R
th(j-a)
thermal resistance from
junction to ambient
in free air
–
60
–
K/W
003aaf367
1
Z
th(j-mb)
δ
= 0.5
(K/W)
0.2
−
1
−
2
−
3
10
0.1
0.05
0.02
0
t
p
P
δ
=
T
10
10
t
t
p
T
−
6
−
5
−
4
−
3
−
2
−
1
10
10
10
10
10
10
1
10
t
(s)
p
Fig 6.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
4 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 0.25 mA; V
GS
= 0 V; T
j
= -55 °C
100
–
–
V
89
–
–
V
V
GS(th)
gate-source threshold
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25 °C
1
1.5
2
V
voltage
I
D
= 1 mA; V
DS
= V
GS
; T
j
= -55 °C
–
–
2.3
–
V
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 175 °C
0.5
–
V
I
DSS
drain leakage current
gate leakage current
V
DS
= 100 V; V
GS
= 0 V; T
j
= 175 °C
V
DS
= 100 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 4.5 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 175 °C
V
GS
= 10 V; I
D
= 25 A; T
j
= 25 °C
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
500
10
100
100
16
40.5
14.4
15
µA
µA
nA
nA
m
Ω
m
Ω
m
Ω
m
Ω
0.05
I
GSS
2
2
R
DSon
drain-source on-state
resistance
–
–
11.5
12
Dynamic characteristics
C
iss
C
oss
C
rss
input capacitance
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz;
T
j
= 25 °C
–
–
–
6500 8600 pF
output capacitance
550
325
660
400
pF
pF
reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 30 V; R
L
= 1.2
Ω
; V
GS
= 5 V;
R
G(ext)
= 10
Ω
; T
j
= 25 °C
–
–
–
–
–
45
65
ns
ns
ns
ns
nH
130
400
130
3.5
195
560
190
–
turn-off delay time
fall time
L
D
internal drain
inductance
measured from contact screw on
mounting base to centre of die;
T
j
= 25 °C
measured from drain lead 6 mm from
package to centre of die; T
j
= 25 °C
–
–
4.5
7.5
–
–
nH
nH
L
S
internal source
inductance
measured from source lead to source
bond pad; T
j
= 25 °C
Source-drain diode
V
SD
source-drain voltage
I
S
= 75 A; V
GS
= 0 V; T
j
= 25 °C
I
S
= 25 A; V
GS
= 0 V; T
j
= 25 °C
–
–
–
–
1.1
–
V
0.85
60
1.2
V
t
rr
reverse recovery time
I
S
= 75 A; dI
S
/dt = -100 A/µs;
–
–
ns
µC
V
GS
= -10 V; V
DS
= 30 V; T
j
= 25 °C
Q
r
recovered charge
0.24
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
5 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf368
003aaf369
250
19
I
V
GS
(V) = 10
5
D
R
(m
Ω
)
4.0
3.8
3.6
DS(on)
(A)
200
V
GS
(V) = 3.0
3.2
17
3.4
3.6
4.0
5.0
3.4
3.2
3.0
2.8
150
100
50
15
13
11
2.6
2.4
0
0
2
4
6
8
10
0
20
40
60
80
100
V
DS
(V)
I (A)
D
T
j
= 25 °C
T
j
= 25 °C
Fig 7.
Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 8.
Drain-source on-state resistance as a function
of drain current; typical values
003aaf370
003aaf371
14.5
100
I
D
R
(m
Ω
)
DS(on)
(A)
80
13.5
60
40
20
0
12.5
11.5
10.5
T =
175
°
C
T =
25
°
C
j
j
3
5
7
9
11
0
1
2
3
4
V
GS
(V)
V
GS
(V)
T
j
= 25 °C
V
DS
> I
D
x R
DSon
Fig 9.
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 10.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
6 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf372
003aaf373
150
3
2.5
2
a
g
fs
(S)
100
1.5
1
50
0
0.5
−
100
0
20
40
60
80
100
0
100
200
I
D
(A)
T
mb
(
°
C)
V
DS
> I
D
x R
DSon
I
D
= 25 A; V
GS
= 5 V
Fig 11.
Forward transconductance as a function of
drain current; typical values
Fig 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature
003aaf374
003aaf375
−
1
2.5
GS(th)
(V)
2
1.5
1
10
D
(A)
I
V
−
2
maximum
10
typical
2 %
98 %
−
3
−
4
−
5
−
6
typical
10
10
10
10
minimum
0.5
0
−
100
0
100
200
0
1
2
3
T (
°
C)
V
(V)
j
GS
T
j
= 25 °C; V
DS
= V
GS
I
D
= 1 mA; V
DS
= V
GS
Fig 13.
Gate-source threshold voltage as a function of
junction temperature
Fig 14.
Sub-threshold drain current as a function of
gate-source voltage
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
7 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
003aaf376
003aaf377
20
5
4
3
2
1
0
V
(V)
GS
C
(nF)
C
iss
15
V
DS
= 14 V
V
DS
= 80 V
C
oss
10
5
C
rss
0
10
−
2
−
1
2
10
1
10
10
0
20
40
60
80 100
Q (nC)
G
V
(V)
DS
V
GS
= 0 V; f = 1 MHz
T
j
= 25 °C; I
D
= 25 A
Fig 15.
Input, output and reverse transfer capacitances
Fig 16.
Gate-source voltage as a function of gate
as a function of drain-source voltage; typical
values
charge; typical values
003aaf378
100
I
D
(A)
80
60
40
20
0
T =
175
°
C
T =
25
°
C
j
j
0
0.4
0.8
1.2
V
SDS
(V)
V
GS
= 0 V
Fig 17.
Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
8 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
7. Package
outline
Plastic single-ended package; heatsink mounted; 1 mounting hole;
3-lead TO-220AB
SOT78A
E
p
A
A
1
q
mounting
base
D
1
D
(1)
L
L
2
1
Q
b
1
L
1
2
3
b
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
b
L
max.
(1)
2
e
A
b
D
E
L
D
1
L
1
A
c
UNIT
p
q
Q
1
1
4.5
4.1
1.39
1.27
0.9
0.6
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
15.0
13.5
3.30
2.79
3.8
3.6
3.0
2.7
2.6
2.2
mm
3.0
2.54
Note
1. Terminals in this zone are not tinned.
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
03-01-22
05-03-14
SOT78A
3-lead TO-220AB
SC-46
Fig 18.
Package outline SOT78A (TO-220AB)
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
9 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
8. Revision
history
Table 7.
Revision history
Document ID
Release date
Data sheet status
20110419 Product
data sheet
Change notice
Supersedes
BUK9515-100A v.3
Modifications:
–
BUK9515_9615-100A_2
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
•
Legal texts have been adapted to the new company name where appropriate.
•
Type number BUK9515-100A separated from data sheet BUK9515_9615-100A_2.
BUK9515_9615-100A_2
19991101
Product specification
–
–
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
10 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
9. Legal
information
9.1 Data
sheet status
Document status
[1] [2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
Right to make changes
— NXP Semiconductors reserves the right to make
9.2 Definitions
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Suitability for use in automotive applications
— This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability
— Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
T
e
rms and conditions of commercial sale
of NXP Semiconductors.
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
11 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Export control
— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Terms and conditions of commercial sale
— NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Adelante
,
Bitport
,
Bitsound
,
CoolFlux
,
CoReUse
,
DESFire
,
EZ-HV
,
FabKey
,
GreenChip
,
HiPerSmart
,
HITAG
,
I²C-bus
logo,
ICODE
,
I-CODE
,
ITEC
,
Labelution
,
MIFARE
,
MIFARE Plus
,
MIFARE Ultralight
,
MoReUse
,
QLPAK
,
Silicon Tuner
,
SiliconMAX
,
SmartXA
,
STARplug
,
TOPFET
,
TrenchMOS
,
TriMedia
and
UCODE
— are trademarks of NXP B.V.
No offer to sell or license
— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
HD Radio
and
HD Radio
logo — are trademarks of iBiquity Digital
Corporation.
10. Contact information
BUK9515-100A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 19 April 2011
12 of 13
BUK9515-100A
NXP Semiconductors
N-channel TrenchMOS logic level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description
. . . . . . . . . . . . . . . . . . . . . .1
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data
. . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics
. . . . . . . . . . . . . . . . . . .4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
.
1
1
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V.
2011.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 19 April 2011
Document identifier: BUK9515-100A
