Nexperia-BUK9660-100A

Part #Nexperia-BUK9660-100A
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Nexperia-BUK9660-100A
BUK9660-100A  
N-channel TrenchMOS logic level FET  
Rev. 02 — 16 February 2011  
Product data sheet  
1. Product
 
profile  
1.1 General
 
description  
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic  
package using TrenchMOS technology. This product has been designed and qualified to  
the appropriate AEC standard for use in automotive critical applications.  
1.2 Features
 
and benefits  
AEC Q101 compliant  
Suitable for logic level gate drive  
sources  
Low conduction losses due to low  
on-state resistance  
Suitable for thermally demanding  
environments due to 175 °C rating  
1.3 Applications  
12 V, 24 V and 42 V loads  
Motors, lamps and solenoids  
Automotive and general purpose  
power switching  
1.4 Quick
 
reference data  
Table 1.  
Symbol  
V

DS  

Quick reference data  
Parameter  
Conditions  
Min Typ Max
 
Unit  
drain-source  
voltage  
T

j

≥
25 °C; T

j

≤
175 °C  
–
–
–
–
–
–
100  
V
I

D  

drain current  
V

GS

= 5 V; T

mb

= 25 °C;  
26  
A
see
Figure 1
; see
Figure 3  
P

tot  

total power  
dissipation  
T

mb

= 25 °C; see
Figure 2  
106  
W

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
Table 1.  
Symbol  
Quick reference data
…continued  
Parameter Conditions  
Min Typ Max
 
Unit  
Static characteristics  
R

DSon

drain-source  
V

GS

= 10 V; I

D

= 15 A;  
T

j

= 25 °C  
–
–
–
49  
–
58  
67  
60  
m
Ω  
m
Ω  
m
Ω  
on-state  
resistance  
V

GS

= 4.5 V; I

D

= 15 A;  
T

j

= 25 °C  
V

GS

= 5 V; I

D

= 15 A;  
T

j

= 25 °C; see
Figure 12
;  
see
Figure 13  
51  
Avalanche ruggedness  
E

DS(AL)S  

non-repetitive  
drain-source  
I

D

= 20 A; V

sup

≤
100 V;  
–
–
30  
mJ  
R

GS

= 50
Ω
; V

GS

= 5 V;  
avalanche energy  
T

j(init)

= 25 °C; unclamped  
2. Pinning
 
information  
Table 2.  
Pinning information  
Symbol Description  
Pin  
1
Simplified outline  
Graphic symbol  
G
D
S
D
gate  
mb  
D
S
2
drain  
source  
3
G
mb  
mounting base; connected to  
drain  
mbb076  
2
1
3
SOT404 (D2PAK)  
3. Ordering
 
information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
BUK9660-100A  
D2PAK  
plastic single-ended surface-mounted package (D2PAK); 3 leads
 
SOT404  
(one lead cropped)  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
2 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
4. Limiting
 
values  
Table 4.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
V

DS  

Parameter  
Conditions  
Min  
Max  
100  
100  
10  
Unit  
V
drain-source voltage  
drain-gate voltage  
gate-source voltage  
drain current  
T

j

≥
25 °C; T

j

≤
175 °C  
R

GS

= 20 k
Ω  
–
V

DGR  

V

GS  

–
V
-10  
–
V
I

D  

T

mb

= 25 °C; V

GS

= 5 V; see
Figure 1
;  
see
Figure 3  
26  
A
T

mb

= 100 °C; V

GS

= 5 V; see
Figure 1  
–
–
19  
A
A
I

DM  

peak drain current  
T

mb

= 25 °C; pulsed; t

p

≤
10 µs;  
106  
see
Figure 3  
P

tot  

T

stg  

T

j  

total power dissipation  
storage temperature  
junction temperature  
peak gate-source voltage  
T

mb

= 25 °C; see
Figure 2  
–
106  
175  
175  
15  
W
°C  
°C  
V
-55  
-55  
-15  
V

GSM  

pulsed; t

p

≤
50 µs  
Source-drain diode  
I

S  

source current  
peak source current  
T

mb

= 25 °C  
–
–
26  
A
A
I

SM  

pulsed; t

p

≤
10 µs; T

mb

= 25 °C  
106  
Avalanche ruggedness  
E

DS(AL)S

non-repetitive drain-source  
avalanche energy  
I

D

= 20 A; V

sup

≤
100 V; R

GS

= 50
Ω
;  
V

GS

= 5 V; T

j(init)

= 25 °C; unclamped  
–
30  
mJ  
03aa24  
03na19  
120  
120  
I
P
der  
der  
(%)  
(%)  
80  
80  
40  
40  
0
0
0
50  
100  
150  
200  
0
50  
100  
150  
200  
T
(
°
C)  
T
(
°
C)  
mb  
mb  
Fig 1.
 
Normalized continuous drain current as a  
function of mounting base temperature  
Fig 2.
 
Normalized total power dissipation as a  
function of mounting base temperature  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
3 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
03nc76  
3
2
10  
t
p
P
δ
=  
T
I
D
(A)  
R
DSon  
= V
 
/I  
DS D  
t
t
10  
p
T
t
= 10
μ
s  
p
100
μ
s  
10  
D.C.  
1 ms  
10 ms  
100 ms  
1
2
3
1
10  
10  
10  
V
(V)  
DS  
Fig 3.
 
Safe operating area; continuous and peak drain currents as a function of drain-source voltage  
5. Thermal
 
characteristics  
Table 5.  
Symbol  
R

th(j-mb)  

Thermal characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
thermal resistance from  
junction to mounting base  
see
Figure 4  
–
–
1.4  
K/W  
R

th(j-a)  

thermal resistance from  
junction to ambient  
mounted on a printed-circuit board;  
minimum footprint  
–
50  
–
K/W  
03nc77  
10  
Z
th(j-mb)  
(K/W)  
1
δ
= 0.5  
0.2  
0.1  
t
p
P
δ
=  
−
1  
10  
10  
T
0.05  
0.02  
t
t
p
Single Shot  
−
5  
T
−
2  
−
6  
−
4  
−
3  
−
2  
−
1  
10  
10  
10  
10  
10  
10  
1
t
(s)  
p
Fig 4.
 
Transient thermal impedance from junction to mounting base as a function of pulse duration  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
4 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
6. Characteristics  
Table 6.  
Symbol  
Characteristics  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Static characteristics  
V

(BR)DSS

drain-source  
breakdown voltage  
I

D

= 0.25 mA; V

GS

= 0 V; T

j

= 25 °C  
I

D

= 0.25 mA; V

GS

= 0 V; T

j

= -55 °C  
100  
89  
1
–
–
V
V
V
–
–
V

GS(th)  

gate-source threshold
 
I

D

= 1 mA; V

DS

= V

GS

; T

j

= 25 °C;  
1.5  
2
voltage  
see
Figure 11  
I

D

= 1 mA; V

DS

= V

GS

; T

j

= -55 °C;  
see
Figure 11  
–
–
–
2.3  
–
V
V
I

D

= 1 mA; V

DS

= V

GS

; T

j

= 175 °C;  
see
Figure 11  
0.5  
I

DSS  

drain leakage current  
gate leakage current  
V

DS

= 100 V; V

GS

= 0 V; T

j

= 175 °C  
V

DS

= 100 V; V

GS

= 0 V; T

j

= 25 °C  
V

GS

= 10 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= -10 V; V

DS

= 0 V; T

j

= 25 °C  
V

GS

= 10 V; I

D

= 15 A; T

j

= 25 °C  
–
–
–
–
–
–
–
500  
10  
µA  
µA  
nA  
0.05  
2
I

GSS  

100  
100  
58  
2
nA  
R

DSon  

drain-source on-state  
resistance  
49  
–
m
Ω  
m
Ω  
V

GS

= 5 V; I

D

= 15 A; T

j

= 175 °C;  
see
Figure 12
; see
Figure 13  
150  
V

GS

= 4.5 V; I

D

= 15 A; T

j

= 25 °C  
–
–
–
67  
60  
m
Ω  
m
Ω  
V

GS

= 5 V; I

D

= 15 A; T

j

= 25 °C;  
51  
see
Figure 12
; see
Figure 13  
Dynamic characteristics  
C

iss  

C

oss  

C

rss  

input capacitance  
V

GS

= 0 V; V

DS

= 25 V; f = 1 MHz;  
T

j

= 25 °C; see
Figure 14  
–
–
–
1440 1924 pF  
output capacitance  
155  
100  
186  
138  
pF  
pF  
reverse transfer  
capacitance  
t

d(on)  

t

r  

t

d(off)  

t

f  

turn-on delay time  
rise time  
V

DS

= 30 V; R

L

= 1.2
Ω
; V

GS

= 5 V;  
R

G(ext)

= 10
Ω
; T

j

= 25 °C  
–
–
–
–
–
20  
–
–
–
–
–
ns  
ns  
ns  
ns  
nH  
124  
68  
turn-off delay time  
fall time  
67  
L

D  

internal drain  
inductance  
from drain lead 6 mm from package to  
centre of die; T

j

= 25 °C  
4.5  
from upper edge of drain mounting base  
to centre of die; T

j

= 25 °C  
–
–
2.5  
7.5  
–
–
nH  
nH  
L

S  

internal source  
inductance  
from source lead to source bond pad;  
T

j

= 25 °C  
Source-drain diode  
V

SD  

source-drain voltage  
I

S

= 25 A; V

GS

= 0 V; T

j

= 25 °C;  
see
Figure 15  
–
0.85  
1.2  
V
t

rr  

reverse recovery time
 
I

S

= 20 A; dI

S

/dt = -100 A/µs;  
–
–
61  
–
–
ns  
V

GS

= -10 V; V

DS

= 30 V; T

j

= 25 °C  
Q

r  

recovered charge  
200  
nC  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
5 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
03nc73  
03nc72  
80  
100  
DSon  
(m
Ω
)  
R
I
D
(A)  
8
V
(V) =  
6
GS  
10  
5
4
90  
80  
70  
60  
50  
40  
60  
40  
20  
0
2.2  
0
2
4
6
8
10  
(V)  
2
4
6
8
10  
V
GS  
(V)  
V
DS  
Fig 5.
 
Output characteristics: drain current as a  
function of drain-source voltage; typical values  
Fig 6.
 
Drain-source on-state resistance as a function  
of gate-source voltage; typical values  
03aa36  
03nc70  
10

-1  

40  
I

D  

g
(S)  
fs  
(A)  
10

-2  

10

-3  

30  
20  
10  
0
min  
typ  
max  
10

-4  

10

-5  

10

-6  

0
1
2
3
0
20  
40  
60  
I
(A)  
D
V

GS

(V)  
Fig 7.
 
Sub-threshold drain current as a function of  
gate-source voltage  
Fig 8.
 
Forward transconductance as a function of  
drain current; typical values  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
6 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
03nc71  
03nc69  
50  
5
4
3
2
1
0
I
V
(V)  
D
(A)  
GS  
V
= 14 V  
DD  
40  
30  
20  
10  
V
= 80 V  
DD  
T =
 
175
°
C  
T =
 
25
°
C  
j
j
0
0
1
2
3
4
0
10  
20  
30  
40  
V
(V)  
GS  
Q
G
(nC)  
Fig 9.
 
Transfer characteristics: drain current as a  
function of gate-source voltage; typical values  
Fig 10.
 
Gate-source voltage as a function of turn-on  
gate charge; typical values  
03aa33  
03nc74  
2.5  
140  
R
DSon  
V

GS(th)  

(V)  
(m
Ω
)  
120  
V
GS  
(V) =  
3
4 5  
3.2 3.4
 
3.6
3.8  
2
max  
100  
80  
60  
40  
20  
0
1.5  
1
typ  
min  
0.5  
0
0
20  
40  
60  
80  
-60  
0
60  
120  
180  
I
(A)  
D
T ( C)  
°
j
Fig 11.
 
Gate-source threshold voltage as a function of  
junction temperature  
Fig 12.
 
Drain-source on-state resistance as a function  
of drain current; typical values  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
7 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
03aa29  
03nc75  
3
3500  
C (pF)  
3000  
C
iss  
a
2500  
2000  
1500  
1000  
500  
2
C
C
oss  
rss  
1
0
-60  
0
0.01  
0.1  
1
10  
100  
0
60  
120  
180  
V
(V)  
DS  
T ( C)  
°
j
Fig 13.
 
Normalized drain-source on-state resistance  
factor as a function of junction temperature  
Fig 14.
 
Input, output and reverse transfer capacitances  
as a function of drain-source voltage; typical  
values  
03nc68  
70  
I
S
(A)  
60  
50  
40  
30  
20  
10  
0
T =
 
175
°
C  
j
T =
 
25
°
C  
j
0.0  
0.5  
1.0  
1.5  
V
(V)  
SD  
Fig 15.
 
Reverse diode current as a function of reverse diode voltage; typical value  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
8 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
7. Package
 
outline  
Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped)  
SOT404  
A
A
E
1
mounting  
base  
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5  
5 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
D
E
A
A
b
UNIT  
c
D
e
L
H
Q
1
1
p
D
max.  
4.50  
4.10  
1.40  
1.27  
0.85  
0.60  
0.64  
0.46  
1.60  
1.20  
10.30  
9.70  
2.90 15.80 2.60  
2.10 14.80 2.20  
mm  
11  
2.54  
REFERENCES  
JEDEC JEITA  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
05-02-11  
06-03-16  
SOT404  
Fig 16.
 
Package outline SOT404 (D2PAK)  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
9 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
8. Revision
 
history  
Table 7.  
Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
BUK9660-100A v.2  
Modifications:  
20110216  
Product data sheet  
–
BUK9560_9660_100A v.1  
•
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
•
Legal texts have been adapted to the new company name where appropriate.  
•
Type number BUK9660-100A separated from data sheet BUK9560_9660_100A v.1.  
BUK9560_9660_100A v.1
 
20010122  
Product specification  
–
–
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
10 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
9. Legal
 
information  
9.1 Data
 
sheet status  
Document status

[1][2]  

Product status

[3]  

Definition  
Objective [short] data sheet  
Development  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet
 
Qualification  
Product [short] data sheet
 
Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product  
Suitability for use in automotive applications
— This Nexperia  
product has been qualified for use in automotive  
9.2 Definitions  
applications. The product is not designed, authorized or warranted to be  
suitable for use in medical, military, aircraft, space or life support equipment,  
nor in applications where failure or malfunction of a Nexperia  
product can reasonably be expected to result in personal injury, death or  
severe property or environmental damage. Nexperia accepts no  
liability for inclusion and/or use of Nexperia products in such  
equipment or applications and therefore such inclusion and/or use is at the  
customer’s own risk.  
Draft
— The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. Nexperia does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Short data sheet
— A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local Nexperia sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Quick reference data
— The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Applications
— Applications that are described herein for any of these  
products are for illustrative purposes only. Nexperia makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Product specification
— The information and data provided in a Product  
data sheet shall define the specification of the product as agreed between  
Nexperia and its customer, unless Nexperia and  
Customers are responsible for the design and operation of their applications  
and products using Nexperia products, and Nexperia  
customer have explicitly agreed otherwise in writing. In no event however,  
shall an agreement be valid in which the Nexperia product is  
deemed to offer functions and qualities beyond those described in the  
Product data sheet.  
accepts no liability for any assistance with applications or customer product  
design. It is customer’s sole responsibility to determine whether the Nexperia  
product is suitable and fit for the customer’s applications and  
products planned, as well as for the planned application and use of  
customer’s third party customer(s). Customers should provide appropriate  
design and operating safeguards to minimize the risks associated with their  
applications and products.  
9.3 Disclaimers  
Limited warranty and liability
— Information in this document is believed to  
be accurate and reliable. However, Nexperia does not give any  
representations or warranties, expressed or implied, as to the accuracy or  
completeness of such information and shall have no liability for the  
consequences of use of such information.  
Nexperia does not accept any liability related to any default,  
damage, costs or problem which is based on any weakness or default in the  
customer’s applications or products, or the application or use by customer’s  
third party customer(s). Customer is responsible for doing all necessary  
testing for the
customer’s applications and products using Nexperia  
products in order to avoid a default of the applications and  
In no event shall Nexperia be liable for any indirect, incidental,  
punitive, special or consequential damages (including – without limitation – lost  
profits, lost savings, business interruption, costs related to the removal or  
replacement of any products or rework charges) whether or not such  
damages are based on tort (including negligence), warranty, breach of  
contract or any other legal theory.  
the products or of the application or use by customer’s third party  
customer(s). Nexperia does not accept any liability in this respect.  
Limiting values
— Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) will cause permanent  
damage to the device. Limiting values are stress ratings only and (proper)  
operation of the device at these or any other conditions above those given in  
the Recommended operating conditions section (if present) or the  
Characteristics sections of this document is not warranted. Constant or  
repeated exposure to limiting values will permanently and irreversibly affect  
the quality and reliability of the device.  
Notwithstanding any damages that customer might incur for any reason  
whatsoever,
Nexperia’s
aggregate and cumulative liability towards  
customer for the products described herein shall be limited in accordance  
with the
Terms and conditions of commercial sale
of Nexperia.  
Right to make changes
— Nexperia reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Terms and conditions of commercial sale
— Nexperia  
products are sold subject to the general terms and conditions of commercial  
sale, as published at

, unless otherwise  
agreed in a valid written individual agreement. In case an individual  
BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
11 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
agreement is concluded only the terms and conditions of the respective  
agreement shall apply. Nexperia hereby expressly objects to  
applying the customer’s general terms and conditions with regard to the  
purchase of Nexperia products by customer.  
9.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
No offer to sell or license
— Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control
— This document as well as the item(s) described herein may  
be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
10. Contact information  
For more information, please visit:

For sales office addresses, please send an email to:

BUK9660-100A  
All information provided in this document is subject to legal disclaimers.  
©
Nexperia B.V. 2017. All rights reserved  
Product data sheet  
Rev. 02 — 16 February 2011  
12 of 13  

BUK9660-100A  
Nexperia  
N-channel TrenchMOS logic level FET  
11. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1  
1.1  
1.2  
1.3  
1.4  
General description
 
. . . . . . . . . . . . . . . . . . . . . .1  
Features and benefit
s
. . . . . . . . . . . . . . . . . . . . .1  
Applications .
 
. . . . . . . . . . . . . . . . . . . . . . . . . . .1  
Quick reference data
 
. . . . . . . . . . . . . . . . . . . . .1  
2
3
4
5
6
7
8
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . . .2  
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . . .2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3  
Thermal characteristics
 
. . . . . . . . . . . . . . . . . . .4  
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .5  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9  
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . . .10  
9
Legal information. . . . . . . . . . . . . . . . . . . . . . .
.
1
1  
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
.
1
1  
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1  
Disclaimer
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12  
9.1  
9.2  
9.3  
9.4  
10  
Contact information. . . . . . . . . . . . . . . . . . . . . .12  

©

Nexperia B.V. 2017. All rights reserved  
For sales office addresses, please send an email to: salesaddresses@nexperia.com  
Date of release:
16 February 2011