Nexperia-BUK9V13-40HX
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BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in
LFPAK56D (half-bridge configuration)
9 May 2023
Product data sheet
1. General
description
D1
Dual, logic level N-channel MOSFET in an LFPAK56D package
(half-bridge configuration), using Trench 9 TrenchMOS technology. This
product has been designed and qualified to AEC-Q101.
G1
G2
An internal connection is made between the source (S1) of the high-
side FET to the drain (D2) of the low-side FE
T
,
m
aking the device ideal
to use as a half-bridge switch in high-performance automotive PWM
applications.
S1, D2
S2
aaa-028081
2. Features
and benefits
•
•
LFPAK56D package with half-bridge configuration enables:
•
•
•
•
•
Reduced PCB layout complexity
PCB shrinkage through reduced component footprint for 3-phase motor drive
Improved system level R
th(j-amb)
due to optimized package design
Lower parasitic inductance to support higher efficiency
Footprint compatibility with LFPAK56D Dual package
Advanced AEC-Q101 grade Trench 9 silicon technology:
•
•
•
Low power losses, high power density
Superior avalanche performance
Repetitive avalanche rated
•
•
LFPAK copper clip packaging provides high robustness and reliability
Gull wing leads support high manufacturability and Automated Optical Inspection (AOI)
3. Applications
•
•
•
•
•
12 V automotive systems
Powertrain, chassis, body and infotainment applications
Brushless or brushed DC motor drive
DC-to-DC systems
LED lighting
4. Quick
reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Limiting values FET1 and FET2
V
DS
I
D
drain-source voltage
drain current
25 °C ≤
T
j
≤ 175
°C
–
–
–
–
–
–
40
42
46
V
A
P
tot
W
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics FET1 and FET2
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
7.9
11.35 13.6
mΩ
Dynamic characteristics FET1 and FET2
Q
GD
gate-drain charge
I
D
= 10 A; V
DS
= 32 V; V
GS
= 5 V;
–
–
2.1
4.2
–
nC
nC
Source-drain diode FET1 and FET2
Q
r
recovered charge
V
DS
= 20 V; T
j
= 25 °C
16.2
[1] 42A
continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] includes
capacitive recovery
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol
S2
Description
source2
Simplified outline
Graphic symbol
8
7
6
5
D1
2
G2
gate2
3
S1, D2
G1
source1, drain2
gate1
G1
G2
4
S1, D2
5
D1
drain1
6
D1
drain1
7
S1, D2
S1, D2
source1, drain2
source1, drain2
1
2
3
4
S2
aaa-028081
8
LFPAK56D; Dual
LFPAK (SOT1205)
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
BUK9V13-40H
LFPAK56D;
Dual LFPAK
plastic, single ended surface mounted package
(LFPAK56D); 8 leads
SOT1205
7. Marking
Table 4. Marking codes
Type number
Marking code
9V1340H
BUK9V13-40H
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BUK9V13-40H
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Nexperia B.
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Product data sheet
9 May 2023
2 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Limiting values FET1 and FET2
V
DS
V
GS
P
tot
I
D
drain-source voltage
gate-source voltage
total power dissipation
drain current
25 °C ≤
T
j
≤ 175
°C
–
40
V
DC; T
j
= 25 °C
-20
20
V
–
46
W
A
–
42
–
30
A
I
DM
T
stg
T
j
peak drain current
storage temperature
junction temperature
–
169
175
175
A
-55
-55
°C
°C
Source-drain diode FET1 and FET2
I
S
source current
T
mb
= 25 °C
–
–
42
A
A
I
SM
peak source current
pulsed; t
p
≤ 10
µs; T
mb
= 25 °C
169
Avalanche ruggedness FET1 and FET2
E
DS(AL)S
non-repetitive drain-
I
D
= 39.9 A; V
sup
≤ 40
V; R
GS
= 50 Ω;
–
–
10.6
39.9
mJ
A
I
AS
non-repetitive avalanche
V
sup
= 40 V; V
GS
= 10 V; T
j(init)
= 25 °C;
current
[1] 42A
continuous current has been successfully demonstrated during application tests. Practically the current will be limited by PCB,
thermal design and operating temperature.
[2] Single-pulse
avalanche rating limited by maximum junction temperature of 175 °C.
[3] Refer
to application note AN10273 for further information.
[4] Protected
by 100% test
03aa16
aaa-032340
120
50
40
30
20
10
0
I
D
(A)
P
der
(%)
80
40
0
0
50
100
150
200
0
25
50
75 100
125 150 175 200
T
mb
(°C)
T
(°C)
mb
V
GS
≥ 10 V
42A continuous current has been successfully
demonstrated during application tests. Practically
the current will be limited by PCB, thermal design
and operating temperature.
Fig. 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig. 2.
Continuous drain current as a function of
mounting base temperature, FET1 and FET2
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BUK9V13-40H
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Nexperia B.
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023. All rights reserved
Product data sheet
9 May 2023
3 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032342
3
10
I
D
(A)
Limit R
= V
/ I
DS D
DSon
2
10
t
p
= 10 µs
100 µs
10
DC
1
1 ms
10 ms
100 ms
-1
10
-1
2
10
1
10
10
V
DS
(V)
T
mb
= 25 °C; I
DM
is a single pulse
Fig. 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage, FET1 and
FET2
aaa-032341
2
10
I
AL
(A)
(1)
10
(2)
(3)
1
-1
10
-2
10
-3
-2
-1
10
10
10
1
AL
10
t
(ms)
(1) T
j (init)
= 25 °C; (2) T
j (init)
= 150 °C; (3) Repetitive Avalanche
Fig. 4.
Avalanche rating; avalanche current as a function of avalanche time, FET1 and FET2
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
th(j-mb)
junction to mounting
base
–
3
3.23
K/W
©
BUK9V13-40H
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Nexperia B.
V
.
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023. All rights reserved
Product data sheet
9 May 2023
4 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032343
10
Z
th(j-mb)
(K/W)
δ = 0.5
1
0.2
0.1
0.05
t
p
-1
P
10
δ =
0.02
single shot
T
t
t
p
T
-2
10
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
1
t
p
(s)
Fig. 5.
Transient thermal impedance from junction to mounting base as a function of pulse duration, FET1 and
FET2
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics FET1 and FET2
V
(BR)DSS
drain-source
breakdown voltage
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -40 °C
I
D
= 250 µA; V
GS
= 0 V; T
j
= -55 °C
40
–
43
–
V
V
V
V
40.5
40
–
36
1.5
–
V
GS(th)
1.85
2.2
voltage
I
D
= 1 mA; V
DS
=V
GS
; T
j
= 175 °C;
0.7
–
–
V
V
DS
= 40 V; V
GS
= 0 V; T
j
= 25 °C
V
DS
= 16 V; V
GS
= 0 V; T
j
= 125 °C
V
DS
= 40 V; V
GS
= 0 V; T
j
= 175 °C
V
GS
= 16 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
–
–
–
–
–
–
–
2.6
5
V
I
DSS
drain leakage current
gate leakage current
0.01
0.14
26
2
µA
µA
µA
nA
nA
10
500
100
100
I
GSS
2
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BUK9V13-40H
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Nexperia B.
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023. All rights reserved
Product data sheet
9 May 2023
5 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 10 A; T
j
= 25 °C;
7.9
11.35 13.6
mΩ
V
GS
= 10 V; I
D
= 10 A; T
j
= 105 °C;
10.9
12
16.87 20.4
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
mΩ
Ω
V
GS
= 10 V; I
D
= 10 A; T
j
= 125 °C;
18.2
21.9
V
GS
= 10 V; I
D
= 10 A; T
j
= 175 °C;
14.5
9.8
21.97 26.4
14.04 16.9
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 25 °C;
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 105 °C;
13.5
14.8
18
20.6
25.4
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 125 °C;
22.24 27.2
26.65 32.8
V
GS
= 4.5 V; I
D
= 10 A; T
j
= 175 °C;
R
G
gate resistance
f = 1 MHz; T
j
= 25 °C
0.7
1.7
4.2
Dynamic characteristics FET1 and FET2
Q
G(tot)
total gate charge
I
D
= 10 A; V
DS
= 32 V; V
GS
= 10 V;
–
13.9
19.4
nC
I
D
= 10 A; V
DS
= 32 V; V
GS
= 5 V;
–
–
–
–
–
–
7.3
2.5
2.1
829
280
38
10.2
3.8
nC
nC
nC
Q
GS
Q
GD
C
iss
C
oss
C
rss
gate-source charge
gate-drain charge
input capacitance
output capacitance
4.2
V
DS
= 25 V; V
GS
= 0 V; f = 1 MHz;
1160 pF
420
84
pF
pF
reverse transfer
capacitance
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 30 V; R
L
= 3 Ω; V
GS
= 5 V;
R
G(ext)
= 5 Ω; T
j
= 25 °C
–
–
–
–
5.6
8.1
9.1
6.5
–
–
–
–
ns
ns
ns
ns
turn-off delay time
fall time
Source-drain diode FET1 and FET2
V
SD
t
rr
source-drain voltage
–
–
–
0.84
21.5
16.2
1
–
V
reverse recovery time
I
S
= 10 A; dI
S
/dt = -100 A/µs; V
GS
= 0 V;
ns
nC
V
DS
= 20 V; T
j
= 25 °C
Q
r
recovered charge
–
[1] includes
capacitive recovery
©
BUK9V13-40H
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Nexperia B.
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023. All rights reserved
Product data sheet
9 May 2023
6 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032344
aaa-032345
60
30
I
R
(mΩ)
D
DSon
10 V
(A)
4.5 V
25
20
15
10
5
48
36
24
12
0
3.5 V
V
= 3 V
GS
2.8 V
2.6 V
0
0
1
2
3
V
4
0
4
8
12
16
V (V)
GS
20
(V)
DS
T
j
= 25 °C
T
j
= 25 °C; I
D
= 10 A
Fig. 6.
Output characteristics; drain current as a
function of drain-source voltage; typical values,
FET1 and FET2
Fig. 7.
Drain-source on-state resistance as a function
of gate-source voltage; typical values, FET1 and
FET2
aaa-032346
aaa-029502
-1
60
10
I
D
I
D
(A)
(A)
-2
-3
-4
-5
-6
48
36
24
12
0
10
10
10
10
10
Min
Typ
Max
175°C
2
T =
-55°C
j
25°C
0
1
3
4
5
0
0.5
1
1.5
2
2.5
(V)
3
V
(V)
V
GS
GS
V
DS
= 8 V
T
j
= 25 °C; V
DS
= 5 V
Fig. 8.
Transfer characteristics; drain current as a
function of gate-source voltage; typical values,
FET1 and FET2
Fig. 9.
Sub-threshold drain current as a function of
gate-source voltage, FET1 and FET2
©
BUK9V13-40H
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Nexperia B.
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023. All rights reserved
Product data sheet
9 May 2023
7 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-029503
aaa-032347
3
80
V
GS(th)
(V)
R
(mΩ)
DSon
2.8 V
3 V
2.5
64
48
32
16
0
Max
2
1.5
1
Typ
Min
3.5 V
4.5 V
0.5
V
GS
= 10 V
0
-60 -30
0
30
60
90 120
150 180
0
6
12
18
24
30
(A)
36
T (°C)
I
D
j
I
D
= 1 mA ; V
DS
= V
GS
T
j
= 25 °C
Fig. 10.
Gate-source threshold voltage as a function of
Fig. 11.
Drain-source on-state resistance as a function
junction temperature, FET1 and FET2
of drain current; typical values, FET1 and FET2
aaa-029504
aaa-032348
2
10
a
V
GS
(V)
1.7
1.4
1.1
0.8
0.5
8
6
4
2
0
V
= 4.5 V
GS
10 V
32 V
= 14 V
V
DS
-60 -30
0
30
60
90 120
150 180
0
4
8
12
16
Q (nC)
G
20
T (°C)
j
T
j
= 25 °C; I
D
= 10 A
Fig. 13.
Gate-source voltage as a function of gate
charge; typical values, FET1 and FET2
Fig. 12.
Normalized drain-source on-state resistance
factor as a function of junction temperature,
FET1 and FET2
©
BUK9V13-40H
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Nexperia B.
V
.
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023. All rights reserved
Product data sheet
9 May 2023
8 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
aaa-032349
4
10
C
(pF)
V
DS
I
D
3
2
10
10
C
C
iss
V
GS(pl)
oss
V
GS(th)
V
GS
C
rss
Q
GS2
Q
GS1
10
10
-1
2
Q
Q
1
10
10
GS
GD
V
DS
(V)
Q
G(tot)
003aaa508
V
GS
= 0 V; f = 1 MHz
Fig. 15.
Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values, FET1 and FET2
Fig. 14.
Gate charge waveform definitions
aaa-032350
60
I
S
(A)
48
36
24
12
0
-55°C
175°C
T =
25°C
j
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
(V)
V
GS
= 0 V
Fig. 16.
Source-drain (diode forward) current as a function of source-drain (diode forward) voltage; typical values,
FET1 and FET2
©
BUK9V13-40H
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Nexperia B.
V
.
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023. All rights reserved
Product data sheet
9 May 2023
9 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
11. Package
outline
Plastic single ended surface mounted package LFPAK56D; 8 leads
SOT1205
E
A
A
b
c
1
1
L
1
mounting
base
D
1
D
2
D
H
L
1
2
3
4
X
b
(8x)
e
c
E
1
w
A
E
2
C
A
1
θ
L
p
y
C
detail X
0
2.5
5 mm
scale
Dimensions
Unit
D
(ref)
2
(1)
(1)
(1)
E
(1)
A
A
b
b
c
c
D
D
1
E
E
e
H
L
L
L
p
w
y
θ
1
1
1
1
2
1
°
8
0
max 1.05
0.1 0.50 4.4 0.25
0.30 4.70 4.55
3.5 5.30 1.8 0.85
nom
min 1.02 0.0 0.35 4.1 0.19
0.24 4.45 4.35
3.4 4.95 1.6 0.60
6.2 1.3
0.55 0.85
5.9 0.8
0.30 0.40
mm
1.27
0.25 0.1
°
Note
1. Plastic or metal protrusions of 0.2 mm maximum per side are not included.
sot1205_po
Issue date
References
Outline
version
European
projection
IEC
JEDEC
JEITA
14-08-21
14-10-28
SOT1205
Fig. 17.
Package outline LFPAK56D; Dual LFPAK (SOT1205)
©
BUK9V13-40H
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Nexperia B.
V
.
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023. All rights reserved
Product data sheet
9 May 2023
10 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
12. Soldering
Footprint information for reflow soldering of LFPAK56D package
SOT1205
5.85
0.57
0.57
0.7
1.97
1.27
0.65
0.025
1.9
3.325
3.175
3.2
2.0
1.275
0.8
1.0
1.875
2.1
2.7
3.85
3.975
0.025
1.1
1.15
0.65
1.27
1.44
0.7
1.1
solder land
solder land plus solder paste
solder paste deposit
occupied area
14-07-28
solder resist
Dimensions in mm
sot1205_fr
Issue date
20-04-20
Fig. 18.
Reflow soldering footprint for LFPAK56D; Dual LFPAK (SOT1205)
©
BUK9V13-40H
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Nexperia B.
V
.
2
023. All rights reserved
Product data sheet
9 May 2023
11 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
equipment, nor in applications where failure or malfunction of an Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia and its suppliers accept
no liability for inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
13. Legal
information
Data sheet status
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Document status
Product
Definition
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no representation
or warranty that such applications will be suitable for the specified use
without further testing or modification.
Objective [short]
data sheet
Development
This document contains data from
the objective specification for
product development.
Preliminary [short]
data sheet
Qualification
Production
This document contains data from
the preliminary specification.
Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia accepts no liability for
any assistance with applications or customer product design. It is customer’s
sole responsibility to determine whether the Nexperia product is suitable
and fit for the customer’s applications and products planned, as well as
for the planned application and use of customer’s third party customer(s).
Customers should provide appropriate design and operating safeguards to
minimize the risks associated with their applications and products.
Product [short]
data sheet
This document contains the product
specification.
[1] Please
consult the most recently issued document before initiating or
completing a design.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
Nexperia does not accept any liability related to any default, damage, costs
or problem which is based on any weakness or default in the customer’s
applications or products, or the application or use by customer’s third party
customer(s). Customer is responsible for doing all necessary testing for the
customer’s applications and products using Nexperia products in order to
avoid a default of the applications and the products or of the application or
use by customer’s third party customer(s). Nexperia does not accept any
liability in this respect.
Definitions
Draft
— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any representations or
warranties as to the accuracy or completeness of information included herein
and shall have no liability for the consequences of use of such information.
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Short data sheet
— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the relevant
full data sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of commercial sale
— Nexperia products are
sold subject to the general terms and conditions of commercial sale, as
in a valid written individual agreement. In case an individual agreement is
concluded only the terms and conditions of the respective agreement shall
apply. Nexperia hereby expressly objects to applying the customer’s general
terms and conditions with regard to the purchase of Nexperia products by
customer.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and customer have explicitly
agreed otherwise in writing. In no event however, shall an agreement be
valid in which the Nexperia product is deemed to offer functions and qualities
beyond those described in the Product data sheet.
No offer to sell or license
— Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Disclaimers
Export control
— This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Limited warranty and liability
— Information in this document is believed
to be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no responsibility
for the content in this document if provided by an information source outside
of Nexperia.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
In no event shall Nexperia be liable for any indirect, incidental, punitive,
special or consequential damages (including – without limitation – lost
profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards customer
for the products described herein shall be limited in accordance with the
T
e
rms and conditions of commercial sale of Nexperia.
Right to make changes
— Nexperia reserves the right to make changes
to information published in this document, including without limitation
specifications and product descriptions, at any time and without notice. This
document supersedes and replaces all information supplied prior to the
publication hereof.
Suitability for use in automotive applications
— This Nexperia product
has been qualified for use in automotive applications. Unless otherwise
agreed in writing, the product is not designed, authorized or warranted to
be suitable for use in life support, life-critical or safety-critical systems or
©
BUK9V13-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
023. All rights reserved
Product data sheet
9 May 2023
12 / 13
Nexperia
BUK9V13-40H
Dual N-channel 40
V
,
1
3 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration)
Contents
©
Nexperia B.
V
.
2
023. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 9 May 2023
©
BUK9V13-40H
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
023. All rights reserved
Product data sheet
9 May 2023
13 / 13
