Nexperia-NHDTA124ETR
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NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
Rev. 1 — 26 June 2020
Product data sheet
1. General
description
PNP Resistor-Equipped Transistor (RET) family in a small SOT23 (TO-236AB) Surface-Mounted
Device (SMD) plastic package.
Table 1. Product overview
Type number
R1
kΩ
10
22
47
R2
kΩ
10
22
47
Package
JEDEC
TO-236AB
NPN complement:
Nexperia
NHDTA114ET
NHDTA124ET
NHDTA144ET
SOT23
NHDTC114ET
NHDTC124ET
NHDTC144ET
2. Features
and benefits
•
•
•
•
•
•
•
100 mA output current capability
High breakdown voltage
Built-in resistors
Simplifies circuit design
Reduces component count
Reduces pick and place costs
AEC-Q101 qualified
3. Applications
•
•
•
•
Digital applications
Cost saving alternative for BC856 series in digital applications
Controlling IC inputs
Switching loads
4. Quick
reference data
Table 2. Quick reference data
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CEO
I
O
Parameter
Conditions
Min
Typ
Max
-80
Unit
collector-emitter voltage
output current
open base
–
–
–
–
V
-100
mA
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
5. Pinning
information
Table 3. Pinning
Pin
1
Symbol
Description
Simplified outline
Graphic symbol
3
I
input (base)
O
R1
2
GND
O
GND (emitter)
output (collector)
I
3
R2
GND
1
2
aaa-019606
6. Ordering
information
Table 4. Ordering information
Type number
Package
Name
Description
Version
NHDTA114ET
NHDTA124ET
NHDTA144ET
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 5. Marking
Type number
NHDTA114ET
NHDTA124ET
NHDTA144ET
QA%
QD%
QF%
[1] %
= placeholder for manufacturing site code
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
2 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
8. Limiting
values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
T
amb
= 25 °C unless otherwise specified.
Symbol
V
CBO
V
CEO
V
EBO
V
I
Parameter
Conditions
open emitter
open base
Min
Max
-80
-80
-10
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
–
–
–
V
open collector
V
NHDTA114ET
-40
-60
-80
–
+10
+10
+10
-100
250
350
150
150
150
V
NHDTA124ET
V
NHDTA144ET
V
I
O
output current
mA
mW
mW
°C
°C
°C
P
tot
total power dissipation
T
amb
≤ 25 °C
–
–
T
j
junction temperature
ambient temperature
storage temperature
–
T
amb
T
stg
-55
-65
[1] Device
mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device
mounted on an FR4 Printed-Circuit-Board (PCB);4-layer copper; tin-plated and standard footprint.
aaa-031531
400
(1)
P
tot
(mW)
300
200
100
0
-75
-25
25
75
125
175
(°C)
T
amb
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, single-sided copper, standard footprint
Fig. 1.
Power derating curves for SOT23 (TO-236AB)
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
3 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
9. Thermal
characteristics
Table 7. Thermal characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
500
357
130
Unit
K/W
K/W
K/W
R
th(j-a)
thermal resistance from junction to ambient
in free air
–
–
–
–
–
–
R
th(j-sp)
thermal resistance from junction to solder point
[1] Device
mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), 4-layer copper, tin-plated and standard footprint.
aaa-031532
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.20
0.33
2
10
0.10
0.02
0.05
0.01
10
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, single-sided copper, tin-plated and standard footprint
Fig. 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-031533
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.33
2
10
0.20
0.10
0.05
0.0
2
10
0.01
0
1
-5
10
-4
-3
-2
10
-1
2
3
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, 4-layer copper, tin-plated and standard footprint
Fig. 3.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
4 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
10. Characteristics
Table 8. Characteristics
T
amb
= 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
V
(BR)CBO
collector-base
I
C
= -100 µA; I
E
= 0 A
-80
–
–
V
breakdown voltage
V
(BR)CEO
I
CBO
collector-emitter
breakdown voltage
I
C
= -2 mA; I
B
= 0 A
V
CB
= -80 V; I
E
= 0 A
-80
–
–
–
–
V
collector-base cut-off
current
-100 nA
-100 nA
I
CEO
collector-emitter cut-off
V
CE
= -60 V; I
B
= 0 A
current
–
–
–
–
V
CE
= -60 V; I
B
= 0 A; T
j
= 150 °C
-5
µA
I
EBO
emitter-base cut-off current
NHDTA114ET
NHDTA124ET
NHDTA144ET
DC current gain
NHDTA114ET
NHDTA124ET
NHDTA144ET
V
EB
= -7 V; I
C
= 0 A
–
–
–
–
–
–
-600 µA
-270 µA
-130 µA
h
FE
V
CE
= -5 V; I
C
= -10 mA
50
70
100
–
–
–
–
–
–
–
–
V
CEsat
collector-emitter
saturation voltage
I
C
= -10 mA; I
B
= -0.5 mA
V
CE
= -5 V ; I
C
= -100 µA
-100 mV
V
I(off)
V
I(on)
off-state input voltage
on-state input voltage
NHDTA114ET
–
-1.15 -0.8
V
V
CE
= -0.3 V ; I
C
= -10 mA
-2.5
-3
-1.8
-2.3
-3.3
–
–
–
V
V
V
NHDTA124ET
NHDTA144ET
-5
R1
bias resistor 1 (input)
NHDTA114ET
7
10
13
kΩ
NHDTA124ET
15.4 22
28.6 kΩ
NHDTA144ET
33
[1]
0.8
47
1
61
1.2
–
kΩ
R2/R1
f
T
bias resistor ratio
transition frequency
collector capacitance
V
CE
= -5 V; I
C
= -10 mA; f = 100 MHz
V
CB
= -10 V; I
E
= i
e
= 0 A; f = 1 MHz
–
–
150
–
MHz
pF
C
c
3
[1] See
section “
T
e
st information” for resistor calculation and test conditions
[2] Characteristics
of built-in transistor
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
5 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
aaa-031534
3
10
h
FE
aaa-031535
(1)
-0.10
I
= -0.70 mA
-0.56 mA
B
-0.63 mA
-0.49 mA
(2)
(3)
I
C
(A)
2
10
-0.08
-0.42 mA
-0.28 mA
-0.06
-0.04
-0.02
0
-0.35 mA
-0.21 mA
10
1
-1
-10
2
-1
-10
-10
-0.14 mA
I
(mA)
C
V
CE
= -5 V
-0.07 mA
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
0
-1
-2
-3
-4
-5
V
(V)
CE
T
amb
= 25 °C
Fig. 4.
NHDTA114E
T
:
D
C current gain as a function of
Fig. 5.
NHDTA114E
T
:
C
ollector current as a function of
collector current; typical values
collector-emitter voltage; typical values
aaa-031536
aaa-031537
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
-10
(1)
(2)
-1
(1)
(2)
(3)
-1
-1
(3)
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
V
CE
= -0.3 V
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 6.
NHDTA114E
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig. 7.
NHDTA114E
T
:
O
ff-state input voltage as a
function of collector current; typical values
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
6 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
aaa-031538
-1
aaa-031539
7
V
CEsat
(V)
C
c
(pF)
-1
5
3
1
-10
(1)
(2)
(3)
-2
-10
2
-1
-10
-10
I
(mA)
C
I
C
/I
B
= 20
0
-20
-40
-60
-80
V
(V)
CB
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
f = 1 MHz
T
amb
= 25 °C
Fig. 8.
NHDTA114E
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 9.
NHDTA114E
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values
aaa-031540
3
10
h
FE
aaa-031541
(1)
-0.100
(2)
(3)
I
= -0.70 mA
-0.56 mA
-0.42 mA
B
-0.63 mA
-0.49 mA
I
C
2
10
(A)
-0.075
-0.35 mA
-0.21 mA
10
-0.050
-0.025
0
-0.28 mA
-0.14 mA
1
-1
-10
2
-1
-10
-10
-0.07 mA
I
(mA)
C
V
CE
= -5 V
0
-1
-2
-3
-4
-5
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
V
(V)
CE
T
amb
= 25 °C
Fig. 10.
NHDTA124E
T
:
D
C current gain as a function of
Fig. 11.
NHDTA124E
T
:
C
ollector current as a function of
collector current; typical values
collector-emitter voltage; typical values
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
7 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
aaa-031542
aaa-031543
2
-10
-10
V
I(on)
(V)
(1)
V
I(off)
(V)
(2)
(3)
-10
-1
(1)
(2)
-1
-1
(3)
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
V
CE
= -0.3 V
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 12.
NHDTA124E
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig. 13.
NHDTA124E
T
:
O
ff-state input voltage as a
function of collector current; typical values
aaa-031544
-1
aaa-031545
3.5
V
CEsat
(V)
C
(pF)
c
3.0
-1
-10
(1)
(2)
(3)
2.5
2.0
1.5
1.0
-2
-10
-1
2
-10
-1
-10
-10
I
(mA)
C
I
C
/I
B
= 20
0
-20
-40
-60
-80
V
(V)
CB
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
f = 1 MHz
T
amb
= 25 °C
Fig. 14.
NHDTA124E
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 15.
NHDTA124E
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
8 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
aaa-031546
3
10
h
(1)
(2)
FE
aaa-031547
-0.10
I
= -0.60 mA
B
(3)
I
C
2
10
(A)
-0.54 mA
-0.42 mA
-0.08
-0.48 mA
-0.36 mA
-0.06
-0.04
-0.02
0
-0.30 mA
-0.18 mA
10
-0.24 mA
-0.12 mA
1
-10
-1
2
-1
-10
-10
I
(mA)
C
-0.06 mA
V
CE
= -5 V
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
0
-1
-2
-3
-4
-5
V
(V)
CE
T
amb
= 25 °C
Fig. 16.
NHDTA144E
T
:
D
C current gain as a function of
Fig. 17.
NHDTA144E
T
:
C
ollector current as a function of
collector current; typical values
collector-emitter voltage; typical values
aaa-031548
aaa-031549
2
-10
-10
V
I(on)
(V)
V
I(off)
(V)
-10
(1)
(2)
-1
(1)
(2)
(3)
-1
-1
(3)
-1
-10
-10
-1
2
-1
2
-10
-1
-10
-10
-10
-1
-10
-10
I
(mA)
I (mA)
C
C
V
CE
= -0.3 V
V
CE
= -5 V
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
(1) T
amb
= -40 °C
(2) T
amb
= 25 °C
(3) T
amb
= 100 °C
Fig. 18.
NHDTA144E
T
:
O
n-state input voltage as a
function of collector current; typical values
Fig. 19.
NHDTA144E
T
:
O
ff-state input voltage as a
function of collector current; typical values
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
9 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
aaa-031550
-1
aaa-031551
12
V
CEsat
(V)
C
c
(pF)
-1
8
4
0
-10
(1)
(2)
(3)
-2
-10
-1
2
-10
-1
-10
-10
I
(mA)
C
I
C
/I
B
= 20
0
-20
-40
-60
-80
V
(V)
CB
(1) T
amb
= 100 °C
(2) T
amb
= 25 °C
(3) T
amb
= -40 °C
f = 1 MHz
T
amb
= 25 °C
Fig. 20.
NHDTA144E
T
:
C
ollector-emitter saturation
voltage as a function of collector current;
typical values
Fig. 21.
NHDTA144E
T
:
C
ollector capacitance as a
function of collector-base voltage; typical
values of built-in transistor
aaa-031554
3
10
f
T
(MHz)
2
10
10
-1
-10
2
-1
-10
-10
I
(mA)
C
f = 100 MHz
V
CE
= -5 V
T
amb
= 25 °C
Fig. 22.
Transition frequency as a function of collector current; typical values of built-in transistor
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
10 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
11. Test
information
Quality information
This product has been qualified in accordance with the Automotive Electronics Council (AEC)
standard Q101 – Stress test qualification for discrete semiconductors, and is suitable for use in
automotive applications.
Resistor calculation
•
Calculation of bias resistor 1 (R1)
•
Calculation of bias resistor ratio (R2/R1)
n.c.
I
I
; I
I1 I2
R1
; I
I3 I4
R2
GND
aaa-020083
Fig. 23.
PNP transistor: Resistor test circuit
Resistor test conditions
Table 9. Resistor test conditions
Type number
R1 (kΩ)
R2 (kΩ)
Test conditions
I
I1
I
I2
I
I3
I
I4
NHDTA114ET 10
NHDTA124ET 22
NHDTA144ET 47
10
22
47
-800 μA
-550 μA
-250 μA
-1.1 mA
-750 μA
-350 μA
350 μA
150 μA
55 μA
450 μA
230 μA
105 μA
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
11 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
12. Package
outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
18-03-12
Fig. 24.
Package outline TO-236AB (SOT23)
©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
12 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
(3×)
0.7
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot23_fr
Fig. 25.
Reflow soldering footprint TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot23_fw
Fig. 26.
Wave soldering footprint TO-236AB (SOT23)
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Nexperia
NHDTA114/124/144ET series
80
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,
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00 mA PNP resistor-equipped transistors
14. Revision
history
Table 10. Revision history
Data sheet ID
Release date
Data sheet status
Change
Supersedes
notice
NHDTA114_124_144ET_SER v.1
20200626
Product data sheet
–
–
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NHDTA114_124 _144ET_SER
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020. All rights reserved
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Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
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©
NHDTA114_124 _144ET_SER
All information provided in this document is subject to legal disclaimers.
Nexperia B.
V
.
2
020. All rights reserved
Product data sheet
Rev. 1 — 26 June 2020
15 / 16
Nexperia
NHDTA114/124/144ET series
80
V
,
1
00 mA PNP resistor-equipped transistors
Contents
©
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020. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release: 26 June 2020
©
NHDTA114_124 _144ET_SER
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Nexperia B.
V
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020. All rights reserved
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Rev. 1 — 26 June 2020
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