Nexperia-NX138AKR
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NX138AK
60 V, N-channel Tench MOSFET
10 June 2016
Product data sheet
1. General
description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features
and benefits
•
Low threshold voltage
•
•
•
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection
3. Applications
•
•
•
•
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick
reference data
Table 1. Quick reference data
Symbol
V
DS
Parameter
Conditions
Min
Typ
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
–
–
–
V
GS
-20
–
20
V
I
D
V
GS
= 10 V; T
amb
= 25 °C
190
mA
Static characteristics
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 190 mA; T
j
= 25 °C
–
3
4.5
Ω
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
5. Pinning
information
Table 2. Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
3
D
G
S
D
gate
2
source
drain
3
G
1
2
TO-236AB (SOT23)
S
017aaa255
6. Ordering
information
Table 3. Ordering information
Type number
Package
Name
Description
Version
NX138AK
TO-236AB
plastic surface-mounted package; 3 leads
SOT23
7. Marking
Table 4. Marking codes
Type number
NX138AK
AP%
[1] %
= placeholder for manufacturing site code
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
2 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
8. Limiting
values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
Parameter
Conditions
Min
Max
60
Unit
V
drain-source voltage
gate-source voltage
drain current
T
j
= 25 °C
–
V
GS
-20
20
V
I
D
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
amb
= 100 °C
T
amb
= 25 °C; single pulse; t
p
≤ 10
µs
T
amb
= 25 °C
–
190
120
765
265
325
1.33
150
150
150
mA
mA
mA
mW
mW
W
–
I
DM
P
tot
peak drain current
–
total power dissipation
–
–
T
sp
= 25 °C
–
T
j
junction temperature
ambient temperature
storage temperature
-55
-55
-65
°C
T
amb
T
stg
°C
°C
Source-drain diode
I
S
source current
T
amb
= 25 °C
–
190
mA
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
[2] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.
017aaa123
017aaa124
120
120
P
I
der
der
(%)
(%)
80
80
40
40
0
– 75
0
– 75
– 25
25
75
125
175
– 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a function
Fig. 2. Normalized continuous drain current as a
of junction temperature
function of junction temperature
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
3 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
aaa-023297
1
t
=
p
10 µs
I
D
(A)
Limit R
= V
/I
DS
DSon
D
100 µs
-1
-2
-3
10
1 ms
DC; T
= 25 °C
sp
10 ms
DC; T
= 25 °C;
100 ms
amb
drain mounting pad 1 cm
2
10
10
-1
2
10
1
10
10
V
(V)
DS
I
DM
= single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
9. Thermal
characteristics
Table 6. Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
410
330
Max
470
380
Unit
K/W
K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air
–
–
R
th(j-sp)
thermal resistance
from junction to solder
point
–
80
95
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm
2
.
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
4 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
aaa-023298
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.25
0.33
0.20
2
10
0.10
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-023299
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.50
0.33
0.25
0.20
2
10
0.10
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm
2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
5 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
Parameter
Conditions
Min
Typ
Max
Unit
I
D
= 250 µA; V
GS
= 0 V; T
j
= 25 °C
60
–
–
V
V
V
GSth
gate-source threshold
I
D
= 250 µA; V
DS
=V
GS
; T
j
= 25 °C
voltage
0.8
1.1
1.5
I
DSS
I
GSS
drain leakage current
gate leakage current
V
DS
= 60 V; V
GS
= 0 V; T
j
= 25 °C
V
GS
= 20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -20 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -10 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= -5 V; V
DS
= 0 V; T
j
= 25 °C
V
GS
= 10 V; I
D
= 190 mA; T
j
= 25 °C
V
GS
= 10 V; I
D
= 190 mA; T
j
= 150 °C
V
GS
= 5 V; I
D
= 170 mA; T
j
= 25 °C
V
GS
= 2.5 V; I
D
= 130 mA; T
j
= 25 °C
V
DS
= 10 V; I
D
= 180 mA; T
j
= 25 °C
–
–
–
–
–
–
–
–
–
–
–
–
–
1
µA
µA
µA
µA
µA
nA
nA
Ω
–
2
–
-2
–
0.5
-0.5
100
-100
4.5
9
–
–
–
R
DSon
drain-source on-state
resistance
3
6
4
5
3.5
Ω
5.2
10
–
Ω
Ω
g
fs
forward
S
transconductance
Dynamic characteristics
Q
G(tot)
Q
GS
Q
GD
C
iss
total gate charge
V
DS
= 30 V; I
D
= 190 mA; V
GS
= 10 V;
T
j
= 25 °C
–
–
–
–
–
–
0.9
0.1
0.2
15
1.4
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
–
–
V
DS
= 30 V; f = 1 MHz; V
GS
= 0 V;
T
j
= 25 °C
20
–
C
oss
C
rss
2.3
1.5
reverse transfer
capacitance
–
t
d(on)
t
r
t
d(off)
t
f
turn-on delay time
rise time
V
DS
= 30 V; I
D
= 190 mA; V
GS
= 10 V;
R
G(ext)
= 75 Ω; T
j
= 25 °C
–
–
–
–
8
12
–
ns
ns
ns
ns
10
8
turn-off delay time
fall time
20
–
5
Source-drain diode
V
SD
source-drain voltage
I
S
= 190 mA; V
GS
= 0 V; T
j
= 25 °C
–
0.8
1.2
V
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
6 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
aaa-023300
aaa-023301
-3
-4
-5
-6
0.8
10
D
10 V
4.5 V
I
D
(A)
I
(A)
3.5 V
3.0 V
0.6
min
typ
max
10
0.4
0.2
2.6 V
10
10
V
= 2.2 V
GS
0
0
1
2
3
4
0
0.5
1
1.5
2
V
(V)
V
(V)
DS
GS
T
j
= 25 °C
V
DS
= 5 V
T
j
= 25 °C
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 7. Sub-threshold drain current as a function of gate-
source voltage
aaa-023302
aaa-023303
7
DSon
8
DSon
R
R
(Ω)
2.6 V
3.0 V
(Ω)
7
6
5
4
3
2
1
0
6
T =
150 °C
j
5
4
3
2
1
0
3.2 V
3.5 V
4.5 V
T =
25 °C
j
V
= 10 V
GS
0
0.2
0.4
0.6
0.8
0
5
10
15
20
I
D
(A)
V
(V)
GS
T
j
= 25 °C
I
D
= 190 mA
Fig. 8. Drain-source on-state resistance as a function of
Fig. 9. Drain-source on-state resistance as a function of
drain current; typical values
gate-source voltage; typical values
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
7 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
aaa-023304
aaa-023305
0.4
2.5
2
a
I
D
(A)
1.5
1
0.2
T
T
j =
25 °C
j =
150 °C
0.5
0
0
-60
0
1
2
3
4
0
60
120
180
V
(V)
T (°C)
j
GS
V
DS
> I
D
x R
DSon
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig. 11. Normalized drain-source on-state resistance as
a function of junction temperature; typical values
aaa-023306
aaa-023307
2
2
10
V
GS(th)
(V)
C
(pF)
max
1.5
1
C
iss
typ
10
min
0.5
0
C
C
oss
rss
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
I
D
= 250 μA; V
DS
= V
GS
f = 1 MHz; V
GS
= 0 V
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical values
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
8 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
aaa-023308
10
V
DS
V
GS
(V)
I
D
8
6
4
2
0
V
V
GS(pl)
GS(th)
V
GS
Q
GS2
Q
GS1
Q
Q
GD
G(tot)
GS
Q
003aaa508
Fig. 15. MOSFET transistor: Gate charge waveform
definitions
0
0.2
0.4
0.6
0.8
Q
1
(nC)
G
V
DS
= 30 V; I
D
= 0.9 A
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
aaa-023309
0.2
I
S
(A)
0.1
T =
150 ºC
j
T =
25 ºC
j
0
0
0.4
0.8
1.2
V
(V)
SD
V
GS
= 0 V
Fig. 16. Source current as a function of source-drain voltage; typical values
11. Test
information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
9 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
12. Package
outline
Plastic surface-mounted package; 3 leads
SOT23
B
D
A
E
X
H
E
v
A
3
Q
A
A
1
c
1
2
e
1
b
w
B
L
p
p
e
detail X
0
1
2 mm
scale
Dimensions (mm are the original dimensions)
Unit
A
A
b
c
D
E
e
e
1
H
E
L
p
Q
v
w
1
p
max 1.1
0.1 0.48
0.15 3.0
1.4
nom
2.5 0.45
0.55
2.1 0.15
0.45
mm
1.9 0.95
0.2 0.1
0.9
0.38 0.09
2.8 1.2
min
sot023_po
References
Outline
version
European
projection
Issue date
IEC
JEDEC
JEITA
14-06-19
14-09-22
SOT23
TO-236AB
Fig. 18. Package outline TO-236AB (SOT23)
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
10 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
13. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig. 19. Reflow soldering footprint for TO-236AB (SOT23)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
2.6
4.6
occupied area
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig. 20. Wave soldering footprint for TO-236AB (SOT23)
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
11 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
14. Revision
history
Table 8. Revision history
Data sheet ID
NX138AK v.2
Modifications:
Release date
20160610
Data sheet status
Change notice
Supersedes
Product data sheet
–
NX138AK v.1
•
Title changed for figures 11 and 12 to juction temperature
NX138AK v.1
20160607 Product
data sheet
–
–
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
12 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the
Terms and conditions of commercial sale
of Nexperia.
15. Legal
information
Right to make changes
— Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Data sheet status
Document
Product
Definition
Suitability for use
— Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
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damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Objective
[short] data
sheet
Development This
document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This
document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
Quick reference data
— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
[1] Please
consult the most recently issued document before initiating or
completing a design.
Applications
— Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
[2] The
term ‘short data sheet’ is explained in section “Definitions”.
[3] The
product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Definitions
Preview
— The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
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— The document is a draft version only. The content is still under
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modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
and the products or of the application or use by customer’s third party
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— A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
Limiting values
— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
short data sheet, the full data sheet shall prevail.
Product specification
— The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
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— Nexperia
products are sold subject to the general terms and conditions of commercial
agreed in a valid written individual agreement. In case an individual
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— Nothing in this document may be interpreted
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— Information in this document is believed
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Nexperia accepts no liability for inclusion and/or use of non-
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automotive qualified products in automotive equipment or applications.
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
13 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations
— A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
14 / 15
Nexperia
NX138AK
60 V, N-channel Tench MOSFET
16. Contents
©
Nexperia B.V. 2017. All rights reserved
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
10 June 2016
©
NX138AK
All information provided in this document is subject to legal disclaimers.
Nexperia B.V. 2017. All rights reserved
Product data sheet
10 June 2016
15 / 15
