Nexperia-PBHV9115TVL
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Dear Customer,
On 7 February 2017 the former NXP Standard Product business became a new company with the
tradename
Nexperia
. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS
semiconductors with its focus on the automotive, industrial, computing, consumer and wearable
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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use
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Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on
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– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights
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Should be replaced with:
–
© Nexperia B.V. (year). All rights reserved
.
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PBHV9115T
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
Rev. 02 — 9 January 2009
Product data sheet
1. Product
profile
1.1 General
description
PNP high-voltage low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
NPN complement: PBHV8115
T
.
1.2 Features
I
High voltage
I
Low collector-emitter saturation voltage V
CEsat
I
High collector current capability I
C
and I
CM
I
High collector current gain (h
FE
) at high I
C
I
AEC-Q101 qualified
1.3 Applications
I
LED driver for LED chain module
I
LCD backlighting
I
High Intensity Discharge (HID) front lighting
I
Automotive motor management
I
Hook switch for wired telecom
I
Switch mode power supply
1.4 Quick
reference data
Table 1.
Symbol
V
CEO
I
C
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
collector-emitter voltage
collector current
open base
–
–
−
150
−
1
V
A
–
–
h
FE
DC current gain
V
CE
=
−
10 V;
I
C
=
−
50 mA
100
220
–
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
2. Pinning
information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
sym013
3. Ordering
information
Table 3.
Ordering information
Type number
Package
Name
–
Description
Version
PBHV9115T
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
PBHV9115T
W7*
[1] *
= -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
2 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
5. Limiting
values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Conditions
open emitter
open base
Min
Max
−
200
−
150
−
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
–
–
–
–
–
V
open collector
V
−
1
A
I
CM
peak collector current
single pulse;
−
2
A
t
p
≤
1 ms
I
BM
peak base current
single pulse;
–
−
400
mA
t
p
≤
1 ms
[1]
P
tot
T
j
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°
C
–
300
mW
°
C
–
150
T
amb
T
stg
−
55
−
65
+150
+150
°
C
°
C
[1] Device
mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab150
400
P
tot
(mW)
300
200
100
0
−
75
−
25
25
75
125
175
(
°
C)
T
amb
FR4 PCB, standard footprint
Fig 1.
Power derating curve
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
3 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
6. Thermal
characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from
junction to ambient
in free air
–
–
417
K/W
R
th(j-sp)
thermal resistance from
junction to solder point
–
–
70
K/W
[1] Device
mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab151
3
10
duty cycle = 1
Z
th(j-a)
0.75
0.5
0.33
(K/W)
2
10
0.2
0.1
0.05
10
0.02
0.01
0
1
−
1
10
−
5
−
4
−
3
−
2
−
1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
4 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
I
CBO
collector-base cut-off
V
CB
=
−
120 V; I
E
= 0 A
–
–
–
–
−
100 nA
current
V
CB
=
−
120 V; I
E
= 0 A;
−
10
µ
A
T
j
= 150
°
C
I
CES
I
EBO
h
FE
collector-emitter
cut-off current
V
CE
=
−
120 V; V
BE
= 0 A
V
EB
=
−
4 V; I
C
= 0 A
–
–
–
–
−
100 nA
−
100 nA
emitter-base cut-off
current
DC current gain
V
CE
=
−
10 V
I
C
=
−
50 mA
100
220
220
30
–
I
C
=
−
100 mA
100
–
[1]
I
C
=
−
1 A
10
–
–
V
CEsat
collector-emitter
I
C
=
−
100 mA; I
B
=
−
10 mA
I
C
=
−
100 mA; I
B
=
−
20 mA
−
60
−
50
−
120 mV
−
100 mV
saturation voltage
–
I
C
=
−
500 mA;
I
B
=
−
100 mA
–
−
150
−
300 mV
[1]
V
BEsat
f
T
base-emitter
saturation voltage
I
C
=
−
1 A; I
B
=
−
200 mA
–
–
–
–
−
1.05
−
1.2
V
transition frequency
V
CE
=
−
10 V; I
E
=
−
10 mA;
f = 100 MHz
115
10
–
–
–
MHz
pF
pF
C
c
collector capacitance
V
CB
=
−
20 V; I
E
= i
e
= 0 A;
f = 1 MHz
C
e
emitter capacitance
V
EB
=
−
0.5 V; I
C
= i
c
= 0 A;
150
f = 1 MHz
t
d
t
r
delay time
rise time
V
CC
=
−
6 V; I
C
=
−
0.5 A;
–
–
–
–
–
–
8
–
–
–
–
–
–
ns
ns
ns
ns
ns
ns
I
Bon
=
−
0.1 A; I
Boff
= 0.1 A
282
290
430
300
730
t
on
t
s
turn-on time
storage time
fall time
t
f
t
off
turn-off time
[1] Pulse
test: t
p
≤
300
µ
s;
δ ≤
0.02.
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
5 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
006aab166
006aab167
400
−
2.0
I
(mA) =
−
400
B
I
C
−
360
−
280
h
FE
(A)
−
320
−
240
(1)
(2)
−
1.6
300
−
200
−
120
−
160
−
80
−
1.2
−
0.8
−
0.4
0
200
100
0
−
40
(3)
−
1
2
3
4
−
10
−
1
−
10
−
10
−
10
−
10
(mA)
0
−
1
−
2
−
3
−
4
V
−
5
(V)
I
C
CE
V
CE
=
−
10 V
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
Fig 3.
DC current gain as a function of collector
current; typical values
Fig 4.
Collector current as a function of
collector-emitter voltage; typical values
006aab168
006aab169
−
1.2
−
1.3
V
(V)
V
BE
BEsat
(V)
(1)
(2)
(3)
(1)
(2)
(3)
−
0.8
−
0.9
−
0.5
−
0.1
−
0.4
0
−
10
−
1
2
3
4
−
1
2
3
4
−
1
−
10
−
10
−
10
−
10
(mA)
−
10
−
1
−
10
−
10
−
10
−
10
I (mA)
C
I
C
V
CE
=
−
10 V
I
C
/I
B
= 5
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
(1) T
amb
=
−
55
°
C
(2) T
amb
= 25
°
C
(3) T
amb
= 100
°
C
Fig 5.
Base-emitter voltage as a function of collector
current; typical values
Fig 6.
Base-emitter saturation voltage as a function
of collector current; typical values
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
6 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
006aab170
006aab171
−
10
−
10
V
V
CEsat
(V)
CEsat
(V)
−
1
−
1
−
1
−
1
−
10
−
10
−
10
−
10
(1)
(2)
(3)
(1)
(2)
(3)
−
2
−
2
−
1
2
3
4
−
1
2
3
4
−
10
−
1
−
10
−
10
−
10
−
10
(mA)
−
10
−
1
−
10
−
10
−
10
−
10
I (mA)
C
I
C
I
C
/I
B
= 5
T
amb
= 25
°
C
(1) I
C
/I
B
= 20
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig 7.
Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8.
Collector-emitter saturation voltage as a
function of collector current; typical values
006aab172
006aab173
3
3
10
10
R
CEsat
R
CEsat
(
Ω
)
(
Ω
)
2
2
10
10
10
10
(1)
(2)
(3)
(1) (2) (3)
1
1
−
1
−
1
10
10
−
1
2
3
4
−
1
2
3
4
−
10
−
1
−
10
−
10
−
10
−
10
(mA)
−
10
−
1
−
10
−
10
−
10
−
10
(mA)
I
I
C
C
I
C
/I
B
= 5
T
amb
= 25
°
C
(1) T
amb
= 100
°
C
(2) T
amb
= 25
°
C
(3) T
amb
=
−
55
°
C
(1) I
C
/I
B
= 20
(2) I
C
/I
B
= 10
(3) I
C
/I
B
= 5
Fig 9.
Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 10.
Collector-emitter saturation resistance as a
function of collector current; typical values
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
7 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
8. Test
information
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450
Ω
450
Ω
R2
V
I
DUT
R1
mgd624
Fig 11.
Test circuit for switching times
8.1 Quality
information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard
Q101 – Stress test qualification for discrete semiconductors
, and is
suitable for use in automotive applications.
9. Package
outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 12.
Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number
Package
Description
Packing quantity
3000
-215
10000
PBHV9115T
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For
further information and the availability of packing methods, see
Section 14
.
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
8 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3
×
)
(3
×
)
Dimensions in mm
0.5
(3
×
)
0.6
(3
×
)
1
sot023_fr
Fig 13.
Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2
×
)
1.4
(2
×
)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 14.
Wave soldering footprint SOT23 (TO236AB)
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
9 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBHV9115T_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090109
Product data sheet
–
PBHV9115T_1
•
T
a
ble 5
: I
BM
maximum value changed from
−
100 mA to
−
400 mA
•
Figure 4
: amended
•
Section 13 “Legal information”
: updated
PBHV9115T_1
20080214
Product data sheet
–
–
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
10 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
13. Legal information
13.1 Data
sheet status
Document status
[1][2]
Product status
[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet
Qualification
Product [short] data sheet
Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft —
The document is a draft version onl
y
.
T
he content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications —
Applications that are described herein for any of these
products are for illustrative purposes onl
y
.
N
XP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliabilit
y
.
Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale —
NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General —
Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license —
Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes —
NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data —
The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use —
NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, militar
y
,
a
ircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injur
y
,
d
eath or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
PBHV9115T_2
© NXP B.
V
.
2
009. All rights reserved.
Product data sheet
Rev. 02 — 9 January 2009
11 of 12
PBHV9115T
NXP Semiconductors
150
V
, 1 A
P
NP high-voltage low V
CEsat
(BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . .
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
Applications .
. . . . . . . . . . . . . . . . . . . . . . . . . .
1
Quick reference data. . . . . . . . . . . . . . . . . . . . .
1
2
Pinning informatio
n
. . . . . . . . . . . . . . . . . . . . . .
2
Ordering informatio
n
. . . . . . . . . . . . . . . . . . . . .
2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics. . . . . . . . . . . . . . . . . . .
4
Characteristic
s
. . . . . . . . . . . . . . . . . . . . . . . . . .
5
Test informatio
n
. . . . . . . . . . . . . . . . . . . . . . . . .
8
Quality information . . . . . . . . . . . . . . . . . . . . . .
8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .
8
Packing information. . . . . . . . . . . . . . . . . . . . . .
8
Soldering .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
Revision histor
y
. . . . . . . . . . . . . . . . . . . . . . . .
1
0
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . .
11
Data sheet status . . . . . . . . . . . . . . . . . . . . . .
11
Definition
s
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
T
r
ademark
s
. . . . . . . . . . . . . . . . . . . . . . . . . . .
1
1
13.1
13.2
13.3
13.4
14
15
Contact informatio
n
. . . . . . . . . . . . . . . . . . . . .
11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.
V
.
2
009.
All rights reserved.
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 9 January 2009
Document identifier: PBHV9115T_2
