Nexperia-PBLS2024D-115

Important notice  

Dear Customer,  

On 7 February 2017 the former NXP Standard Product business became a new company with the  

tradename

Nexperia

. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS  

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable  

application markets  

In data sheets and application notes which still contain NXP or Philips Semiconductors references, use  

the references to Nexperia, as shown below.  

use

(email)  

Replace the copyright notice at the bottom of each page or elsewhere in the document, depending on  

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– © NXP N.V. (year). All rights reserved or © Koninklijke Philips Electronics N.V. (year). All rights  

reserved  

Should be replaced with:  

–

© Nexperia B.V. (year). All rights reserved

.  

If you have any questions related to the data sheet, please contact our nearest sales office via e-mail  

or telephone (details via

). Thank you for your cooperation and  

understanding,  

Kind regards,  

Team Nexperia  

PBLS2024D  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

Rev. 02 — 6 September 2009  

Product data sheet  

1. Product

 

profile  

1.1 General

 

description  

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor and NPN Resistor-  

Equipped

T

r

ansistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)  

plastic package.  

1.2 Features  

I

Low V

CEsat

(BISS) and resistor-equipped transistor in one package  

I

Low threshold voltage (<1 V) compared to MOSFET  

I

Space-saving solution  

I

Reduction of component count  

I

AEC-Q101 qualified  

1.3 Applications  

I

Supply line switches  

I

Battery charger switches  

I

High-side switches for LEDs, drivers and backlights  

I

Portable equipment  

1.4 Quick

 

reference data  

Table 1.  

Symbol  

Quick reference data  

Parameter  

Conditions  

Min  

Typ  

Max  

Unit  

TR1; PNP low V

CEsat

transistor  

V

CEO  

I

C  

collector-emitter voltage  

collector current  

open base  

–

–

–

–

–

–

−

20  

−

1.8  

−

3  

V

A

A

I

CM  

peak collector current  

single pulse;  

t

p

≤

1 ms  

[1]  

R

CEsat  

collector-emitter saturation

 

I

C

=

−

1.8 A;  

–

78  

117  

m

Ω  

resistance  

I

B

=

−

100 mA  

TR2; NPN resistor-equipped transistor  

V

CEO  

I

O  

collector-emitter voltage  

output current  

open base  

–

–

50  

V

–

–

100  

28.6  

1.2  

mA  

k

Ω  

R1  

bias resistor 1 (input)  

bias resistor ratio  

15.4  

0.8  

22  

1

R2/R1  

[1] Pulse

 

test: t

p

≤

300

µ

s;

δ ≤

0.02.  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

2. Pinning

 

information  

Table 2.  

Pinning  

Pin  

1

Description  

Simplified outline  

Graphic symbol  

base TR1  

6

5

4

TR2  

3

6

5

4

2

input (base) TR2  

output (collector) TR2  

GND (emitter) TR2  

collector TR1  

3

R2  

R1  

4

1

2

3

TR1  

5

6

emitter TR1  

1

2

006aab506  

3. Ordering

 

information  

Table 3.  

Ordering information  

Type number

 

Package  

Name  

Description  

Version  

SOT457  

PBLS2024D  

SC-74  

plastic surface-mounted package (TSOP6); 6 leads  

4. Marking  

Table 4.  

Marking codes  

Type number  

Marking code  

PBLS2024D  

KD  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

2 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

5. Limiting

 

values  

Table 5.  

Limiting values  

In accordance with the Absolute Maximum Rating System (IEC 60134).  

Symbol  

Parameter  

Conditions  

Min  

Max  

Unit  

TR1; PNP low V

CEsat

transistor  

V

CBO  

V

CEO  

V

EBO  

I

C  

collector-base voltage  

collector-emitter voltage  

emitter-base voltage  

collector current  

open emitter  

open base  

–

–

–

–

–

−

20  

−

20  

−

5  

V

V

V

A

A

open collector  

−

1.8  

−

3  

I

CM  

peak collector current  

single pulse;  

t

p

≤

1 ms  

I

B  

base current  

–

–

−

300  

−

1  

mA  

A

I

BM  

peak base current  

single pulse;  

t

p

≤

1 ms  

[1]  

[2]  

[3]  

P

tot  

total power dissipation  

T

amb

≤

25

°

C  

–

–

–

370  

480  

630  

mW  

mW  

mW  

TR2; NPN resistor-equipped transistor  

V

CBO  

V

CEO  

V

EBO  

V

I  

collector-base voltage  

collector-emitter voltage  

emitter-base voltage  

input voltage  

open emitter  

open base  

–

–

–

50  

50  

10  

V

V

V

open collector  

positive  

–

–

–

–

+40  

−

10  

100  

100  

V

negative  

V

I

O  

output current  

mA  

mA  

I

CM  

peak collector current  

single pulse;  

t

p

≤

1 ms  

[1][2]  

[3]  

P

tot  

total power dissipation  

total power dissipation  

T

–

200  

mW  

Per device  

[1]  

[2]  

[3]  

P

tot  

T

amb

≤

25

°

C  

–

480  

mW  

mW  

mW  

°

C  

–

590  

–

760  

T

j  

junction temperature  

ambient temperature  

storage temperature  

–

150  

T

amb  

T

stg  

−

55  

−

65  

+150  

+150  

°

C  

°

C  

[1] Device

 

mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  

footprint.  

[2] Device

 

mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm

2

.  

[3] Device

 

mounted on a ceramic PCB, Al

2

O

3

, standard footprint.  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

3 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab507  

1000  

P

tot  

(mW)  

(1)  

(2)  

800  

600  

400  

200  

0

(3)  

−

75  

−

25  

25  

75  

125  

175  

(

°

C)  

T

amb  

(1) Ceramic

 

PCB, Al

2

O

3

, standard footprint  

(2) FR4

 

PCB, mounting pad for collector 1 cm

2  

(3) FR4

 

PCB, standard footprint  

Fig 1.

 

Per device: Power derating curves  

6. Thermal

 

characteristics  

Table 6.  

Thermal characteristics  

Symbol  

Per device  

R

th(j-a)  

Parameter  

Conditions  

Min  

Typ  

Max Unit  

[1]  

[2]  

[3]  

thermal resistance from  

junction to ambient  

in free air  

–

–

–

–

–

–

–

–

260  

211  

165  

100  

K/W  

K/W  

K/W  

K/W  

R

th(j-sp)  

thermal resistance from  

junction to solder point  

[1] Device

 

mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  

[2] Device

 

mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm

2

.  

[3] Device

 

mounted on a ceramic PCB, Al

2

O

3

, standard footprint.  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

4 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab508  

3

10  

Z

th(j-a)  

δ

= 1  

(K/W)  

0.75  

0.33  

0.50  

2

10  

0.20  

0.10  

0.02  

0.05  

10  

0.01  

0

1

−

1  

10  

−

5  

−

4  

−

3  

−

2  

−

1  

2

3

10  

10  

10  

10  

10  

1

10  

10  

10  

t

(s)  

p

FR4 PCB, standard footprint  

Fig 2.

 

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;  

typical values  

006aab509  

3

10  

Z

th(j-a)  

(K/W)  

δ

= 1  

0.75  

0.33  

0.50  

2

10  

0.20  

0.05  

0.10  

0.02  

10  

0.01  

0

1

−

1  

10  

−

5  

−

4  

−

3  

−

2  

−

1  

2

3

10  

10  

10  

10  

10  

1

10  

10  

10  

t

(s)  

p

FR4 PCB, mounting pad for collector 1 cm

2  

Fig 3.

 

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;  

typical values  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

5 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab510  

3

10  

Z

th(j-a)  

(K/W)  

δ

= 1  

0.75  

0.33  

2

10  

0.50  

0.20  

0.05  

0.10  

0.02  

10  

0.01  

0

1

−

1  

10  

−

5  

−

4  

−

3  

−

2  

−

1  

2

3

10  

10  

10  

10  

10  

1

10  

10  

10  

t

(s)  

p

Ceramic PCB, Al

2

O

3

, standard footprint  

Fig 4.

 

TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;  

typical values  

7. Characteristics  

Table 7.  

Characteristics  

T

amb

= 25

°

C unless otherwise specified.  

Symbol Parameter

 

Conditions  

TR1; PNP low V

CEsat

transistor  

Min  

Typ  

Max Unit  

I

CBO  

collector-base cut-off

 

V

CB

=

−

20 V; I

E

= 0 A  

–

–

–

–

−

100 nA  

current  

V

CB

=

−

20 V; I

E

= 0 A;  

−

50  

µ

A  

T

j

= 150

°

C  

I

CES  

I

EBO  

h

FE  

collector-emitter  

cut-off current  

V

CE

=

−

16 V; V

BE

= 0 V  

V

EB

=

−

5 V; I

C

= 0 A  

–

–

–

–

−

100 nA  

−

100 nA  

emitter-base cut-off  

current  

DC current gain  

V

CE

=

−

2 V; I

C

=

−

100 mA  

V

CE

=

−

2 V; I

C

=

−

500 mA  

V

CE

=

−

2 V; I

C

=

−

1 A  

220  

420  

410  

320  

260  

−

45  

−

85  

−

80  

–

–

–

–

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

[1]  

220  

200  

V

CE

=

−

2 V; I

C

=

−

1.8 A  

I

C

=

−

0.5 A; I

B

=

−

50 mA  

I

C

=

−

1 A; I

B

=

−

50 mA  

I

C

=

−

1 A; I

B

=

−

100 mA  

I

C

=

−

1.8 A; I

B

=

−

100 mA  

I

C

=

−

1 A; I

B

=

−

100 mA  

I

C

=

−

1.8 A; I

B

=

−

100 mA  

I

C

=

−

0.5 A; I

B

=

−

50 mA  

I

C

=

−

1.8 A; I

B

=

−

100 mA  

160  

V

CEsat  

collector-emitter  

saturation voltage  

–

–

–

–

–

–

–

–

−

70  

mV  

−

130 mV  

−

120 mV  

−

140

−

210 mV  

R

CEsat  

collector-emitter  

saturation resistance  

80  

78  

120  

117  

m

Ω  

m

Ω  

V

V

BEsat  

base-emitter  

saturation voltage  

−

0.85

−

1  

−

0.93

−

1.1  

V

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

6 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

Table 7.  

Characteristics

…continued  

T

amb

= 25

°

C unless otherwise specified.  

Symbol  

Parameter  

Conditions  

Min  

Typ  

Max Unit  

[1]  

V

BEon  

base-emitter  

V

CE

=

−

10 V; I

C

=

−

1 A  

–

−

0.73

−

1.1  

V

turn-on voltage  

t

d  

t

r  

delay time  

V

CC

=

−

10 V; I

C

=

−

1 A;  

–

–

–

–

–

–

–

17  

–

–

–

–

–

–

–

ns  

I

Bon

=

−

50 mA;  

rise time  

33  

ns  

I

Boff

= 50 mA  

t

on  

t

s  

turn-on time  

storage time  

fall time  

50  

ns  

270  

60  

ns  

t

f  

ns  

t

off  

f

T  

turn-off time  

transition frequency  

330  

130  

ns  

I

C

=

−

50 mA; V

CE

=

−

10 V;  

MHz  

f = 100 MHz  

C

c  

collector capacitance

 

V

CB

=

−

10 V; I

E

= i

e

= 0 A;  

–

–

45  

–

–

pF  

nA  

f = 1 MHz  

TR2; NPN resistor-equipped transistor  

I

CBO

collector-base cut-off

 

V

CB

= 50 V; I

E

= 0 A  

100  

current  

I

CEO  

collector-emitter  

cut-off current  

V

CE

= 30 V; I

B

= 0 A  

–

–

–

–

1

µ

A  

µ

A  

V

CE

= 30 V; I

B

= 0 A;  

50  

T

j

= 150

°

C  

I

EBO  

emitter-base cut-off  

current  

V

EB

= 5 V; I

C

= 0 A  

–

–

180  

µ

A  

h

FE  

DC current gain  

V

CE

= 5 V; I

C

= 5 mA  

60  

–

–

–

–

V

CEsat  

collector-emitter  

I

C

= 10 mA; I

B

= 0.5 mA  

150  

mV  

saturation voltage  

V

I(off)  

V

I(on)  

R1  

off-state input voltage

 

V

CE

= 5 V; I

C

= 100

µ

A  

on-state input voltage

 

V

CE

= 0.3 V; I

C

= 5 mA  

bias resistor 1 (input)  

–

1.1  

1.7  

0.8  

–

V

V

2.5  

15.4 22  

28.6 k

Ω  

R2/R1  

C

c  

bias resistor ratio  

0.8  

–

1

–

1.2  

collector capacitance

 

V

CB

= 10 V; I

E

= i

e

= 0 A;  

f = 1 MHz  

2.5  

pF  

[1] Pulse

 

test: t

p

≤

300

µ

s;

δ ≤

0.02.  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

7 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab511  

006aab512  

800  

−

3  

I

(mA) =

−

16.0  

−

12.8  

B

−

14.4  

−

11.2  

h

FE  

I

C

(1)  

(2)  

(A)  

600  

−

9.6  

−

6.4  

−

3.2  

−

2  

−

8.0  

−

4.8  

400  

200  

0

(3)  

−

1  

−

1.6  

0

0.0  

−

1  

2

3

4

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

(mA)  

−

0.5  

−

1.0  

−

1.5  

−

2.0  

I

V

(V)  

CE  

C

V

CE

=

−

2 V  

T

amb

= 25

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

55

°

C  

Fig 5.

 

TR1 (PNP): DC current gain as a function of  

collector current; typical values  

Fig 6.

 

TR1 (PNP): Collector current as a function of  

collector-emitter voltage; typical values  

006aab513  

006aab514  

−

1.2  

−

1.2  

V

(V)  

V

BE  

BEsat  

(V)  

−

1.0  

−

1.0  

−

0.8  

−

0.6  

−

0.4  

−

0.2  

(1)  

(2)  

(3)  

(1)  

(2)  

(3)  

−

0.8  

−

0.6  

−

0.4  

−

0.2  

−

1  

2

3

4

−

1  

2

3

4

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

(mA)  

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

I (mA)  

C

I

C

V

CE

=

−

2 V  

I

C

/I

B

= 20  

(1) T

amb

=

−

55

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

= 100

°

C  

(1) T

amb

=

−

55

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

= 100

°

C  

Fig 7.

 

TR1 (PNP): Base-emitter voltage as a function  

of collector current; typical values  

Fig 8.

 

TR1 (PNP): Base-emitter saturation voltage as  

a function of collector current; typical values  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

8 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab515  

006aab516  

−

1  

−

1  

V

V

CEsat  

(V)  

CEsat  

(V)  

−

1  

−

1  

−

10  

−

10  

−

10  

−

10  

−

10  

−

10  

(1)  

(2)  

(1)  

(2)  

−

2  

−

2  

(3)  

(3)  

−

3  

−

3  

−

1  

2

3

4

−

1  

2

3

4

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

(mA)  

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

I (mA)  

C

I

C

I

C

/I

B

= 20  

T

amb

= 25

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

55

°

C  

(1) I

C

/I

B

= 100  

(2) I

C

/I

B

= 50  

(3) I

C

/I

B

= 10  

Fig 9.

 

TR1 (PNP): Collector-emitter saturation  

voltage as a function of collector current;  

typical values  

Fig 10.

 

TR1 (PNP): Collector-emitter saturation  

voltage as a function of collector current;  

typical values  

006aab517  

006aab518  

3

3

10  

10  

R

CEsat  

R

CEsat  

(

Ω

)  

(

Ω

)  

2

2

10  

10  

10  

10  

(1)  

(3)  

(2)  

1

1

(1)  

(2)  

−

1  

−

1  

10  

10  

(3)  

−

2  

−

2  

10  

10  

−

1  

2

3

4

−

1  

2

3

4

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

(mA)  

−

10  

−

1  

−

10  

−

10  

−

10  

−

10  

I (mA)  

C

I

C

I

C

/I

B

= 20  

T

amb

= 25

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

55

°

C  

(1) I

C

/I

B

= 100  

(2) I

C

/I

B

= 50  

(3) I

C

/I

B

= 10  

Fig 11.

 

TR1 (PNP): Collector-emitter saturation  

resistance as a function of collector current;  

typical values  

Fig 12.

 

TR1 (PNP): Collector-emitter saturation  

resistance as a function of collector current;  

typical values  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

9 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aaa038  

3

2

10  

h

FE  

(1)  

(2)  

(3)  

10  

10  

1

10  

−

1  

2

1

10  

10  

I

(mA)  

C

V

CE

= 5 V  

(1) T

amb

= 150

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

Fig 13.

 

TR2 (NPN): DC current gain as a function of collector current; typical values  

006aaa040  

006aaa041  

10  

10  

V

I(on)  

V

I(off)  

(V)  

(V)  

(1)  

(2)  

(1)  

(2)  

(3)  

1

1

(3)  

−

1  

−

1  

10  

10  

−

1  

2

−

2  

−

1  

1

10  

1

10  

10  

10  

10  

1

10  

I

(mA)  

I (mA)  

C

C

V

CE

= 0.3 V  

V

CE

= 5 V  

(1) T

amb

=

−

40

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

= 100

°

C  

(1) T

amb

=

−

40

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

= 100

°

C  

Fig 14.

 

TR2 (NPN): On-state input voltage as a  

function of collector current; typical values  

Fig 15.

 

TR2 (NPN): Off-state input voltage as a  

function of collector current; typical values  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

10 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

006aab522  

006aaa039  

−

1  

1

10  

(1)  

(2)  

V

V

CEsat  

(V)  

CEsat  

(V)  

(3)  

−

1  

10  

−

2  

−

2  

10  

10  

2

2

1

10  

10  

1

10  

10  

I

(mA)  

I

(mA)  

C

C

I

C

/I

B

= 20  

I

C

/I

B

= 70; T

amb

= 25

°

C  

(1) T

amb

= 100

°

C  

(2) T

amb

= 25

°

C  

(3) T

amb

=

−

40

°

C  

Fig 16.

 

TR2 (NPN): Collector-emitter saturation  

voltage as a function of collector current;  

typical values  

Fig 17.

 

TR2 (NPN): Collector-emitter saturation  

voltage as a function of collector current;  

typical values  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

11 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

8. Test

 

information  

−

I

B

input pulse  

90 %  

(idealized waveform)  

−

I

(100 %)  

Bon  

10 %  

−

I

Boff  

output pulse  

−

(idealized waveform)  

I

C

90 %  

−

I

(100 %)  

C

10 %  

t

t

t

f

t

t

r

s

d

006aaa266  

t

t

off  

on  

Fig 18.

 

TR1: BISS transistor switching time definition  

V

V

CC  

BB  

R

B

R

C

V

o

(probe)  

(probe)  

oscilloscope  

oscilloscope  

450

Ω

 

450

Ω  

R2  

V

I

DUT  

R1  

mgd624  

V

CC

=

−

10 V; I

C

=

−

1 A; I

Bon

=

−

50 mA; I

Boff

= 50 mA  

Fig 19.

 

TR1: Test circuit for switching times  

8.1 Quality

 

information  

This product has been qualified in accordance with the Automotive Electronics Council  

(AEC) standard

Q101 – Stress test qualification for discrete semiconductors

, and is  

suitable for use in automotive applications.  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

12 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

9. Package

 

outline  

3.1  

2.7  

1.1  

0.9  

6

5

4

0.6  

0.2  

3.0 1.7  

2.5 1.3  

pin 1 index  

1

2

3

0.26  

0.10  

0.40  

0.25  

0.95  

1.9  

Dimensions in mm  

04-11-08  

Fig 20.

 

Package outline SOT457 (SC-74)  

10. Packing information  

Table 8.  

Packing methods  

The indicated -xxx are the last three digits of the 12NC ordering code.

[1]  

Type number

 

Package Description  

Packing quantity  

3000  

10000  

-135  

[2]  

[3]  

PBLS2024D  

SOT457 4

 

mm pitch, 8 mm tape and reel; T1  

4 mm pitch, 8 mm tape and reel; T2  

-115  

-125  

-165  

[1] For

 

further information and the availability of packing methods, see

Section 13

.  

[2] T1:

 

normal taping  

[3] T2:

 

reverse taping  

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

13 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

11. Revision history  

Table 9.  

Revision history  

Document ID  

PBLS2024D_2  

Modifications:  

PBLS2024D_1  

Release date  

Data sheet status  

Change notice  

Supersedes  

20090906  

Product data sheet  

–

PBLS2024D_1  

T

a

ble 7 “Characteristics”

: I

CES

conditions amended  

20090720  

Product data sheet  

–

–

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

14 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

12. Legal information  

12.1 Data

 

sheet status  

Document status

[1][2]  

Product status

[3]  

Development  

Definition  

Objective [short] data sheet  

This document contains data from the objective specification for product development.  

This document contains data from the preliminary specification.  

This document contains the product specification.  

Preliminary [short] data sheet

 

Qualification  

Product [short] data sheet

 

Production  

[1]  

[2]  

[3]  

Please consult the most recently issued document before initiating or completing a design.  

The term ‘short data sheet’ is explained in section “Definitions”.  

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  

information is available on the Internet at URL

.  

damage. NXP Semiconductors accepts no liability for inclusion and/or use of  

NXP Semiconductors products in such equipment or applications and  

therefore such inclusion and/or use is at the customer’s own risk.  

12.2 Definitions  

Draft —

The document is a draft version onl

y

.

T

he content is still under  

internal review and subject to formal approval, which may result in  

modifications or additions. NXP Semiconductors does not give any  

representations or warranties as to the accuracy or completeness of  

information included herein and shall have no liability for the consequences of  

use of such information.  

Applications —

Applications that are described herein for any of these  

products are for illustrative purposes onl

y

.

N

XP Semiconductors makes no  

representation or warranty that such applications will be suitable for the  

specified use without further testing or modification.  

Limiting values —

Stress above one or more limiting values (as defined in  

the Absolute Maximum Ratings System of IEC 60134) may cause permanent  

damage to the device. Limiting values are stress ratings only and operation of  

the device at these or any other conditions above those given in the  

Characteristics sections of this document is not implied. Exposure to limiting  

values for extended periods may affect device reliabilit

y

.  

Short data sheet —

A short data sheet is an extract from a full data sheet  

with the same product type number(s) and title. A short data sheet is intended  

for quick reference only and should not be relied upon to contain detailed and  

full information. For detailed and full information see the relevant full data  

sheet, which is available on request via the local NXP Semiconductors sales  

office. In case of any inconsistency or conflict with the short data sheet, the  

full data sheet shall prevail.  

Terms and conditions of sale —

NXP Semiconductors products are sold  

subject to the general terms and conditions of commercial sale, as published  

at

, including those pertaining to warrant

y

,  

, unless  

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  

any inconsistency or conflict between information in this document and such  

terms and conditions, the latter will prevail.  

12.3 Disclaimers  

General —

Information in this document is believed to be accurate and  

reliable. However, NXP Semiconductors does not give any representations or  

warranties, expressed or implied, as to the accuracy or completeness of such  

information and shall have no liability for the consequences of use of such  

information.  

No offer to sell or license —

Nothing in this document may be interpreted  

or construed as an offer to sell products that is open for acceptance or the  

grant, conveyance or implication of any license under any copyrights, patents  

or other industrial or intellectual property rights.  

Right to make changes —

NXP Semiconductors reserves the right to make  

changes to information published in this document, including without  

limitation specifications and product descriptions, at any time and without  

notice. This document supersedes and replaces all information supplied prior  

to the publication hereof.  

Export control —

This document as well as the item(s) described herein  

may be subject to export control regulations. Export might require a prior  

authorization from national authorities.  

Quick reference data —

The Quick reference data is an extract of the  

product data given in the Limiting values and Characteristics sections of this  

document, and as such is not complete, exhaustive or legally binding.  

Suitability for use —

NXP Semiconductors products are not designed,  

authorized or warranted to be suitable for use in medical, militar

y

,

a

ircraft,  

space or life support equipment, nor in applications where failure or  

malfunction of an NXP Semiconductors product can reasonably be expected  

to result in personal injur

y

,

d

eath or severe property or environmental  

12.4 Trademarks  

Notice: All referenced brands, product names, service names and trademarks  

are the property of their respective owners.  

13. Contact information  

For more information, please visit:

For sales office addresses, please send an email to:

PBLS2024D_2  

© NXP B.

V

.

2

009. All rights reserved.  

Product data sheet  

Rev. 02 — 6 September 2009  

15 of 16  

PBLS2024D  

NXP Semiconductors  

20

V

,

1

.8 A

 

PNP BISS loadswitch  

14. Contents  

1

Product profile . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

1.1  

1.2  

1.3  

1.4  

General description. . . . . . . . . . . . . . . . . . . . . .

 

1  

Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Applications .

 

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

1  

Quick reference data. . . . . . . . . . . . . . . . . . . . .

 

1  

2

Pinning informatio

n

. . . . . . . . . . . . . . . . . . . . . .

 

2  

Ordering informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

2  

Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Thermal characteristics. . . . . . . . . . . . . . . . . . .

 

4  

Characteristic

s

. . . . . . . . . . . . . . . . . . . . . . . . . .

 

6  

Test informatio

n

. . . . . . . . . . . . . . . . . . . . . . . .

 

1

2  

Quality information . . . . . . . . . . . . . . . . . . . . .

 

12  

Package outline . . . . . . . . . . . . . . . . . . . . . . . .

 

13  

Packing information. . . . . . . . . . . . . . . . . . . . .

 

13  

Revision histor

y

. . . . . . . . . . . . . . . . . . . . . . . .

 

1

4  

3

4

5

6

7

8

8.1  

9

10  

11  

12  

Legal information. . . . . . . . . . . . . . . . . . . . . . .

 

15  

Data sheet status . . . . . . . . . . . . . . . . . . . . . .

 

15  

Definition

s

. . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

5  

Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

15  

T

r

ademark

s

. . . . . . . . . . . . . . . . . . . . . . . . . . .

 

1

5  

12.1  

12.2  

12.3  

12.4  

13  

14  

Contact informatio

n

. . . . . . . . . . . . . . . . . . . . .

 

15  

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

16  

Please be aware that important notices concerning this document and the product(s)  

described herein, have been included in section ‘Legal information’.  

© NXP B.

V

.

 

2

009.  

All rights reserved.  

For sales office addresses, please send an email to: salesaddresses@nxp.com  

Date of release: 6 September 2009  

Document identifier: PBLS2024D_2