Nexperia-PBSS3540M-315
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DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS3540M
40 V, 0.5 A
PNP low V
CEsat
(BISS) transistor
Product data sheet
2003 Aug 12
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
FEATURES
QUICK REFERENCE DATA
•
Low collector-emitter saturation voltage V
CEsat
•
High collector current capability I
C
and I
CM
•
High efficiency leading to reduced heat generation
•
Reduced printed-circuit board requirements.
SYMBOL
V
CEO
I
C
PARAMETER
MAX. UNIT
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
−
40
−
500
−
1
V
mA
A
I
CM
R
CEsat
<700
m
Ω
APPLICATIONS
PINNING
•
Power management:
– DC-DC
converter
– Supply
line switching
– Battery
charger
PIN
1
DESCRIPTION
base
2
emitter
collector
3
– LCD
backlighting.
•
Peripheral driver:
– Driver
in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive
load drivers (e.g. relays, buzzers and
motors).
3
2
handbook, halfpage
2
DESCRIPTION
1
3
Low V
CEsat
PNP transistor in a SOT883 leadless ultra
small plastic package.
NPN complement: PBSS2540M.
1
Bottom view
MAM469
MARKING
TYPE NUMBER
PBSS3540M
MARKING CODE
Fig.1 Simplified
outline (SOT883) and symbol.
DA
2003 Aug 12
2
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−
40
UNIT
V
CBO
V
CEO
V
EBO
I
C
−
−
−
−
−
−
−
−
V
V
V
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
−
40
−
6
open collector
notes 1 and 2
−
500
−
1
mA
A
I
CM
I
BM
−
100
250
430
+150
150
+150
mA
mW
mW
°
C
P
tot
total power dissipation
T
amb
≤
25
°
C; notes 1 and 2
T
amb
≤
25
°
C; note 1 and 3
T
stg
T
j
storage temperature
−
65
−
junction temperature
°
C
T
amb
operating ambient temperature
−
65
°
C
Notes
1. Refer
to SOT883 standard mounting conditions.
2. Device
mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
μ
m
copper strip line.
3. Device
mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
thermal resistance from junction to
ambient
in free air; notes 1 and 2
500
290
K/W
K/W
in free air; notes 1, 3 and 4
Notes
1. Refer
to SOT883 standard mounting conditions.
2. Device
mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60
μ
m
copper strip line.
3. Device
mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
2
.
4. Operated
under pulsed conditions: duty cycle
δ ≤
20%, pulse width t
p
≤
30 ms.
Soldering
Reflow soldering is the only recommended soldering method.
2003 Aug 12
3
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
CHARACTERISTICS
T
amb
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
V
CB
=
−
30 V; I
E
= 0
MIN.
TYP. MAX. UNIT
I
CBO
collector-base cut-off current
−
−
−
100
−
50
−
100
−
nA
μ
A
nA
V
CB
=
−
30 V; I
E
= 0; T
j
= 150
°
C
V
EB
=
−
5 V; I
C
= 0
−
−
I
EBO
h
FE
emitter-base cut-off current
DC current gain
−
−
V
CE
=
−
2 V; I
C
=
−
10 mA
200
150
40
−
−
V
CE
=
−
2 V; I
C
=
−
100 mA; note 1
V
CE
=
−
2 V; I
C
=
−
500 mA; note 1
−
−
−
−
V
CEsat
collector-emitter saturation voltage
I
C
=
−
10 mA; I
B
=
−
0.5 mA
I
C
=
−
100 mA; I
B
=
−
5 mA
−
−
50
−
130
−
200
−
350
<700
−
1.2
−
1.1
−
mV
mV
mV
mV
m
Ω
V
−
−
I
C
=
−
200 mA; I
B
=
−
10 mA
−
−
I
C
=
−
500 mA; I
B
=
−
50 mA; note 1
−
−
R
CEsat
V
BEsat
V
BEon
f
T
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
I
C
=
−
500 mA; I
B
=
−
50 mA; note 1
I
C
=
−
500 mA; I
B
=
−
50 mA; note 1
V
CE
=
−
2 V; I
C
=
−
100 mA; note 1
−
440
−
−
−
−
V
I
C
=
−
100 mA; V
CE
=
−
5 V;
100
300
MHz
f = 100 MHz
C
c
collector capacitance
V
CB
=
−
10 V; I
E
= I
e
= 0; f = 1 MHz
−
−
10
pF
Note
1. Pulse
test: t
p
≤
300
μ
s;
δ ≤
0.02.
2003 Aug 12
4
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
MLE202
MLE203
800
−
1200
handbook, halfpage
handbook, halfpage
h
V
FE
BE
(mV)
(1)
600
(1)
(2)
−
800
(2)
400
−
400
(3)
(3)
200
0
−
10
0
−
10
−
1
2
3
−
1
2
3
−
1
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
(mA)
I
(mA)
C
C
V
CE
=
−
2 V.
V
CE
=
−
2 V.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(1) T
amb
=
−
55
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
(3) T
amb
= 150
°
C.
Fig.2 DC
current gain as a function of collector
current; typical values.
Fig.3 Base-emitter
voltage as a function of
collector current; typical values.
MLE204
MLE205
3
−
10
−
1200
handbook, halfpage
handbook, halfpage
V
V
BEsat
CEsat
(mV)
(mV)
(1)
−
800
(2)
2
−
10
(3)
−
400
(1)
(3)
(2)
−
1
−
10
0
−
10
−
1
2
3
−
1
2
3
−
1
−
10
−
10
−
10
−
1
−
10
−
10
−
10
I
(mA)
I
(mA)
C
C
I
C
/I
B
= 20.
I
C
/I
B
= 20.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(1) T
amb
= 150
°
C.
(2) T
amb
= 25
°
C.
(3)
T
amb
=
−
55
°
C.
(3) T
amb
=
−
55
°
C.
Fig.4 Collector-emitter
saturation voltage as a
function of collector current; typical values.
Fig.5 Base-emitter
saturation voltage as a
function of collector current; typical values.
2003 Aug 12
5
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
MLE200
MLE201
3
10
−
1200
handbook, halfpage
handbook, halfpage
R
CEsat
(
Ω
)
I
C
(mA)
(1)
2
(2)
(4)
10
(3)
(5)
−
800
(6)
(8)
(7)
10
1
(9)
(10)
−
400
(1)
(3)
(2)
−
1
−
10
10
0
−
1
2
3
−
1
−
10
−
10
−
10
(mA)
0
−
1
−
2
−
3
−
4
−
5
(V)
I
V
C
CE
T
amb
= 25
°
C.
I
C
/I
B
= 20.
(1) I
B
=
−
40 mA.
(2) I
B
=
−
36 mA.
(5) I
B
=
−
24 mA.
(6) I
B
=
−
20 mA.
(9) I
B
=
−
8 mA.
(10) I
B
=
−
4 mA.
(1) T
amb
= 150
°
C.
(2)
T
amb
= 25
°
C.
(3)
I
B
=
−
32 mA.
(7)
I
B
=
−
16 mA.
(3) T
amb
=
−
55
°
C.
(4) I
B
=
−
28 mA.
(8) I
B
=
−
12 mA.
Fig.7 Collector-emitter
equivalent on-resistance
as a function of collector current; typical
values.
Fig.6 Collector
current as a function of
collector-emitter voltage; typical values.
2003 Aug 12
6
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
PACKAGE OUTLINE
Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm
SOT883
L
L
1
2
b
3
b
e
1
1
e
1
A
A
1
E
D
0
0.5
1 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
1
UNIT
A
b
b
D
E
e
e
L
L
1
1
1
max.
0.50
0.46
0.20 0.55 0.62 1.02
0.12 0.47 0.55 0.95
0.30 0.30
0.22 0.22
mm
0.03
0.35 0.65
Note
1. Including plating thickness
REFERENCES
JEDEC
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEITA
03-02-05
03-04-03
SOT883
SC-101
2003 Aug 12
7
NXP Semiconductors
Product data sheet
40
V
,
0
.5 A
PNP low V
CEsat
(BISS) transistor
PBSS3540M
DATA SHEET STATUS
DOCUMENT
STATUS
(1)
PRODUCT
STATUS
(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please
consult the most recently issued document before initiating or completing a design.
2. The
product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General
⎯
Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes
⎯
NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license
⎯
Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use
⎯
NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control
⎯
This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data
⎯
The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications
⎯
Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values
⎯
Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2003 Aug 12
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/01/pp9
Date of release: 2003 Aug 12
Document order number:
9397 750 11561
